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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDK09G65C5XTMA2DIODE SCHOTTKY 650V 9A TO263-2 Infineon Technologies |
3,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 270pF @ 1V, 1MHz | 0 ns | 1.6 mA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.8 V @ 9 A |
|
IDH09SG60CXKSA2DIODE SCHOTTKY 600V 9A TO220-2 Infineon Technologies |
3,606 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 9A (DC) | -55°C ~ 175°C | 2.1 V @ 9 A |
|
IDP2321XUMA1IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies |
2,751 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Not For New Designs | - | - | - | - | - | - | - | - | ||
|
BAS7002VH6327XTSA1DIODE SCHOTTKY 70V 70MA SC79-2 Infineon Technologies |
3,600 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | 150°C (Max) | 1 V @ 15 mA |
|
BAS3010B03WE6327HTSA1DIODE SCHOTTKY 30V 1A SOD323-2 Infineon Technologies |
2,896 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 40pF @ 5V, 1MHz | - | 20 µA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
|
BAT165E6327HTSA1DIODE SCHOTTKY 40V 750MA SOD323 Infineon Technologies |
3,492 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 12pF @ 10V, 1MHz | - | 50 µA @ 40 V | 40 V | 750mA (DC) | 150°C (Max) | 740 mV @ 750 mA | |
|
BAT5402LRHE6327XTSA1DIODE SCHOTTKY 30V 200MA TSLP-2 Infineon Technologies |
7,167 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
|
BAS4002LE6327XTMA1DIODE SCHOTTKY 40V 120MA TSLP-2 Infineon Technologies |
7,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 5pF @ 0V, 1MHz | 100 ps | 1 µA @ 30 V | 40 V | 120mA (DC) | -55°C ~ 150°C | 1 V @ 40 mA | |
|
|
BAT5402VH6327XTSA1DIODE SCHOTTKY 30V 200MA SC79-2 Infineon Technologies |
2,195 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
IDM05G120C5XTMA1DIODE SCHOTTKY 1200V 5A TO252-2 Infineon Technologies |
3,069 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 301pF @ 1V, 1MHz | 0 ns | 33 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
IDH06G65C5XKSA2DIODE SCHOTTKY 650V 6A TO220-2-1 Infineon Technologies |
3,670 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 110 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
|
|
IDH02G120C5XKSA1DIODE SCHOT 1200V 2A TO220-2-1 Infineon Technologies |
997 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 182pF @ 1V, 1MHz | 0 ns | 18 µA @ 1200 V | 1200 V | 2A (DC) | 175°C (Max) | 1.65 V @ 2 A |
|
|
IDM10G120C5XTMA1DIODE SCHTKY 1200V 38A PGTO252-2 Infineon Technologies |
2,297 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 29pF @ 800V, 1MHz | 0 ns | 62 µA @ 12 V | 1200 V | 38A (DC) | -55°C ~ 150°C | 1.8 V @ 10 A |
|
|
IDH08G65C6XKSA1DIODE SCHOTTKY 650V 20A TO220-2 Infineon Technologies |
3,254 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 401pF @ 1V, 1MHz | 0 ns | 27 µA @ 420 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.35 V @ 8 A | |
|
|
IDH05G120C5XKSA1DIODE SCHOTTKY 1.2KV 5A TO220-2 Infineon Technologies |
2,308 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 301pF @ 1V, 1MHz | 0 ns | 33 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
IDH10G65C6XKSA1DIODE SCHOTTKY 650V 24A TO220-2 Infineon Technologies |
2,095 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 495pF @ 1V, 1MHz | 0 ns | 33 µA @ 420 V | 650 V | 24A (DC) | -55°C ~ 175°C | 1.35 V @ 10 A | |
|
|
IDH10G65C5XKSA2DIODE SCHOTKY 650V 10A TO220-2-1 Infineon Technologies |
2,456 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
IDH12G65C5XKSA2DIODE SCHOTKY 650V 12A TO220-2-1 Infineon Technologies |
3,003 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 360pF @ 1V, 1MHz | 0 ns | 190 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A |
|
|
IDH12SG60CXKSA2DIODE SCHOTTKY 600V 12A TO220-2 Infineon Technologies |
3,124 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 175°C | 2.1 V @ 12 A |
|
IDW16G65C5XKSA1DIODE SCHOTTKY 650V 16A TO247-3 Infineon Technologies |
3,580 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
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