Fairchild Semiconductor FQU1N50TU

Número de parte
FQU1N50TU
Fabricante
Fairchild Semiconductor
Categoría:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Paquete
I-PAK
Ficha técnica
Fudong Communication (Shenzhen) Grupo Co., Ltd.FQU1N50TU.pdf
Descripción
MOSFET N-CH 500V 1.1A IPAK
Cantidad

Precio unitario$0

Precio total$0

Pago
payment
Envío
payment

Product details

1. How to order FQU1N50TU on Fudong Communication (Shenzhen) Grupo Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Grupo Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Grupo Co., Ltd. guarantee that FQU1N50TU is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FQU1N50TU. All suppliers must pass our qualification reviews before they can publish their products including FQU1N50TU on Fudong Communication (Shenzhen) Grupo Co., Ltd.; we pay more attention to the channels and quality of FQU1N50TU products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FQU1N50TU price and inventory displayed accurate?

The price and inventory of FQU1N50TU fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FQU1N50TU?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQU1N50TU we delivered, we will accept the replacement or return of the FQU1N50TU only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQU1N50TU.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FQU1N50TU pin diagram, FQU1N50TU datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Imagen FQU1N50TU FQNL1N50BBU FQB17N08TM FQN1N50CBU FQP5N20L
Número de parte FQU1N50TU FQNL1N50BBU FQB17N08TM FQN1N50CBU FQP5N20L
Fabricante Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Packaging Tube Tube Tube Tube Tube
Series QFET® QFET® QFET® QFET® QFET®
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V 500 V 500 V 500 V 500 V
Current-ContinuousDrain(Id)@25°C 1.1A (Tc) 1.1A (Tc) 1.1A (Tc) 1.1A (Tc) 1.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 9Ohm @ 550mA, 10V 9Ohm @ 550mA, 10V 9Ohm @ 550mA, 10V 9Ohm @ 550mA, 10V 9Ohm @ 550mA, 10V
Vgs(th)(Max)@Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5 nC @ 10 V 5.5 nC @ 10 V 5.5 nC @ 10 V 5.5 nC @ 10 V 5.5 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 150 pF @ 25 V 150 pF @ 25 V 150 pF @ 25 V 150 pF @ 25 V 150 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

FQU1N50TU Información relevante

Las siguientes partes están incluidas "FQU1N50TU" ISSI, soluciones integradas de silicio, Inc. FQU1N50TU.

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