Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
B250C800DM-E3/45

B250C800DM-E3/45

BRIDGE RECT 1P 400V 900MA DFM

Vishay General Semiconductor - Diodes Division
2,843 -

RFQ

B250C800DM-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 900 mA 1 V @ 900 mA 10 µA @ 400 V -40°C ~ 125°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
RMB2S-E3/45

RMB2S-E3/45

BRIDGE RECT 3P 200V TO269AA

Vishay General Semiconductor - Diodes Division
2,387 -

RFQ

RMB2S-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 500 mA 1.25 V @ 400 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Surface Mount TO-269AA, 4-BESOP
DF02S

DF02S

BRIDGE RECT 1PHASE 200KV 1A DFS

Diodes Incorporated
3,407 -

RFQ

DF02S

Ficha técnica

Tube - Active Single Phase Standard 200 V 1 A 1.1 V @ 1.5 A 10 µA @ 200 V -65°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
GBU6B-BP

GBU6B-BP

BRIDGE RECT 1PHASE 100V 6A GBU

Micro Commercial Co
3,875 -

RFQ

GBU6B-BP

Ficha técnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 3 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
TBS608

TBS608

6A 800V STANDARD BRIDGE RECTIFIE

Taiwan Semiconductor Corporation
3,153 -

RFQ

TBS608

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 800 V 6 A 1 V @ 6 A 2 µA @ 800 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
EDF1DM-E3/45

EDF1DM-E3/45

BRIDGE RECT 1PHASE 200V 1A DFM

Vishay General Semiconductor - Diodes Division
2,138 -

RFQ

EDF1DM-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 1 A 1.05 V @ 1 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
GBJ6005-F

GBJ6005-F

BRIDGE RECT 1PHASE 50V 6A GBJ

Diodes Incorporated
3,233 -

RFQ

GBJ6005-F

Ficha técnica

Tube - Active Single Phase Standard 50 V 6 A 1 V @ 3 A 5 µA @ 50 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
EDF1AM-E3/45

EDF1AM-E3/45

BRIDGE RECT 1PHASE 50V 1A DFM

Vishay General Semiconductor - Diodes Division
3,752 -

RFQ

EDF1AM-E3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 1 A 1.05 V @ 1 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
DB103G

DB103G

BRIDGE RECT 1PHASE 200V 1A DB

GeneSiC Semiconductor
3,060 -

RFQ

DB103G

Ficha técnica

Bulk - Active Single Phase Standard 200 V 1 A 1.1 V @ 1 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
GBU601

GBU601

BRIDGE RECT 1PHASE 100V 6A GBU

Diodes Incorporated
2,044 -

RFQ

GBU601

Ficha técnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 3 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU1004-G

GBU1004-G

BRIDGE RECT 1PHASE 400V 10A GBU

Comchip Technology
3,039 -

RFQ

GBU1004-G

Ficha técnica

Tube - Active Single Phase Standard 400 V 10 A 1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G

GBU4G

BRIDGE RECT 1PHASE 400V 4A GBU

GeneSiC Semiconductor
3,063 -

RFQ

GBU4G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G

GBU8G

BRIDGE RECT 1PHASE 400V 8A GBU

GeneSiC Semiconductor
2,199 -

RFQ

GBU8G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBL06-E3/45

GBL06-E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division
3,807 -

RFQ

GBL06-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-E3/45

GBL02-E3/45

BRIDGE RECT 1PHASE 200V 3A GBL

Vishay General Semiconductor - Diodes Division
2,438 -

RFQ

GBL02-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-E3/45

GBL01-E3/45

BRIDGE RECT 1PHASE 100V 3A GBL

Vishay General Semiconductor - Diodes Division
2,769 -

RFQ

GBL01-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU4G

GBU4G

BRIDGE RECT 1PHASE 400V 4A GBU

onsemi
920 -

RFQ

GBU4G

Ficha técnica

Tube - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A

GBU4A

BRIDGE RECT 1PHASE 50V 4A GBU

onsemi
2,531 -

RFQ

GBU4A

Ficha técnica

Tube - Active Single Phase Standard 50 V 4 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBL04-E3/51

GBL04-E3/51

BRIDGE RECT 1PHASE 400V 3A GBL

Vishay General Semiconductor - Diodes Division
2,348 -

RFQ

GBL04-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 3 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-E3/51

GBL08-E3/51

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
2,145 -

RFQ

GBL08-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
Total 8096 Record«Prev1... 1617181920212223...405Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario