Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT50GN120B2G

APT50GN120B2G

IGBT 1200V 134A 543W TO-247

Microchip Technology
2,758 -

RFQ

APT50GN120B2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
STGWA40H120DF2

STGWA40H120DF2

TRENCH GATE IGBT TO247 PKG

STMicroelectronics
2,764 -

RFQ

STGWA40H120DF2

Ficha técnica

Tube - Active Trench Field Stop 1200 V 80 A 160 A 2.6V @ 15V, 40A 468 W 1mJ (on), 1.32mJ (off) Standard 158 nC 18ns/152ns 600V, 40A, 10Ohm, 15V 488 ns -55°C ~ 175°C (TJ) Through Hole
RGT00TS65DGC13

RGT00TS65DGC13

5US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
3,278 -

RFQ

RGT00TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 85 A 150 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 42ns/137ns 400V, 50A, 10Ohm, 15V 54 ns -40°C ~ 175°C (TJ) Through Hole
AFGHL50T65SQDC

AFGHL50T65SQDC

IGBT 650V A

onsemi
2,098 -

RFQ

AFGHL50T65SQDC

Ficha técnica

Tube Automotive, AEC-Q101 Active Field Stop 650 V 100 A 200 A 2.1V @ 15V, 50A 238 W 131µJ (on), 96µJ (off) Standard 94 nC 17.6ns/94.4ns 400V, 12.5A, 4.7Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
RGT80TS65DGC13

RGT80TS65DGC13

5US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
2,654 -

RFQ

RGT80TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 70 A 120 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/119ns 400V, 40A, 10Ohm, 15V 236 ns -40°C ~ 175°C (TJ) Through Hole
RGWX5TS65EHRC11

RGWX5TS65EHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,978 -

RFQ

RGWX5TS65EHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W - Standard 213 nC 59ns/243ns 400V, 37.5A, 10Ohm, 15V 100 ns -40°C ~ 175°C (TJ) Through Hole
RGSX5TS65EHRC11

RGSX5TS65EHRC11

8S SHORT-CIRCUIT TOLERANCE, 650V

Rohm Semiconductor
2,927 -

RFQ

RGSX5TS65EHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 114 A 225 A 2.15V @ 15V, 75A 404 W 3.44mJ (on), 1.9mJ (off) Standard 79 nC 43ns/113ns 400V, 75A, 10Ohm, 15V 116 ns -40°C ~ 175°C (TJ) Through Hole
IXDR30N120D1

IXDR30N120D1

IGBT 1200V 50A 200W ISOPLUS247

IXYS
3,701 -

RFQ

IXDR30N120D1

Ficha técnica

Tube - Active NPT 1200 V 50 A 60 A 2.9V @ 15V, 30A 200 W 4.6mJ (on), 3.4mJ (off) Standard 120 nC - 600V, 30A, 47Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Through Hole
APT64GA90B2D30

APT64GA90B2D30

IGBT 900V 117A 500W TO-247

Microchip Technology
3,394 -

RFQ

APT64GA90B2D30

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1192µJ (on), 1088µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXXH50N60C3D1

IXXH50N60C3D1

IGBT 600V 100A 600W TO247AD

IXYS
3,722 -

RFQ

IXXH50N60C3D1

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 100 A 200 A 2.3V @ 15V, 36A 600 W 720µJ (on), 330µJ (off) Standard 64 nC 24ns/62ns 360V, 36A, 5Ohm, 15V 25 ns -55°C ~ 175°C (TJ) Through Hole
RGW60TS65CHRC11

RGW60TS65CHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,509 -

RFQ

RGW60TS65CHRC11

Ficha técnica

Tube - Active - 650 V 64 A 120 A 1.9V @ 15V, 30A 178 W 70µJ (on), 220µJ (off) Standard 84 nC 37ns/91ns 400V, 15A, 10Ohm, 15V 34 ns -40°C ~ 175°C (TJ) Through Hole
IKQ100N60TXKSA1

IKQ100N60TXKSA1

IGBT TRENCH/FS 600V 160A TO247-3

Infineon Technologies
2,379 -

RFQ

IKQ100N60TXKSA1

Ficha técnica

Bulk,Tube TrenchStop™ Active Trench Field Stop 600 V 160 A 400 A 2V @ 15V, 100A 714 W 3.1mJ (on), 2.5mJ (off) Standard 610 nC 30ns/290ns 400V, 100A, 3.6Ohm, 15V 230 ns -40°C ~ 175°C (TJ) Through Hole
RGW80TS65CHRC11

RGW80TS65CHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,369 -

RFQ

RGW80TS65CHRC11

Ficha técnica

Tube - Active - 650 V 81 A 160 A 1.9V @ 15V, 40A 214 W 120µJ (on), 340µJ (off) Standard 110 nC 43ns/145ns 400V, 20A, 10Ohm, 15V 33 ns -40°C ~ 175°C (TJ) Through Hole
IXGH48N60B3D1

IXGH48N60B3D1

IGBT 600V 300W TO247

IXYS
3,707 -

RFQ

IXGH48N60B3D1

Ficha técnica

Tube GenX3™ Active PT 600 V - 280 A 1.8V @ 15V, 32A 300 W 840µJ (on), 660µJ (off) Standard 115 nC 22ns/130ns 480V, 30A, 5Ohm, 15V 100 ns -55°C ~ 150°C (TJ) Through Hole
STGWA60V60DWFAG

STGWA60V60DWFAG

AUTOMOTIVE-GRADE TRENCH FIELD-ST

STMicroelectronics
2,426 -

RFQ

STGWA60V60DWFAG

Ficha técnica

Tube Automotive, AEC-Q101 Active Trench Field Stop 600 V 80 A 240 A 2.3V @ 15V, 60A 375 W 1.02mJ (on), 370µJ (off) Standard 314 nC 35ns/190ns 400V, 60A, 4.7Ohm, 15V 200 ns -55°C ~ 175°C (TJ) Through Hole
IXGH40N120C3D1

IXGH40N120C3D1

IGBT 1200V 75A 380W TO247

IXYS
2,222 -

RFQ

IXGH40N120C3D1

Ficha técnica

Tube GenX3™ Active PT 1200 V 75 A 180 A 4.4V @ 15V, 30A 380 W 1.8mJ (on), 550µJ (off) Standard 142 nC 17ns/130ns 600V, 30A, 3Ohm, 15V 100 ns -55°C ~ 150°C (TJ) Through Hole
RGW00TS65CHRC11

RGW00TS65CHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,012 -

RFQ

RGW00TS65CHRC11

Ficha técnica

Tube - Active - 650 V 96 A 200 A 1.9V @ 15V, 50A 254 W 180µJ (on), 420µJ (off) Standard 141 nC 49ns/180ns 400V, 25A, 10Ohm, 15V 33 ns -40°C ~ 175°C (TJ) Through Hole
APT100GN60LDQ4G

APT100GN60LDQ4G

IGBT 600V 229A 625W TO264

Microchip Technology
3,780 -

RFQ

APT100GN60LDQ4G

Ficha técnica

Tube - Active Trench Field Stop 600 V 229 A 300 A 1.85V @ 15V, 100A 625 W 4.75mJ (on), 2.675mJ (off) Standard 600 nC 31ns/310ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
STGYA120M65DF2

STGYA120M65DF2

TRENCH GATE FIELD-STOP IGBT, M S

STMicroelectronics
3,865 -

RFQ

STGYA120M65DF2

Ficha técnica

Tube M Active NPT, Trench Field Stop 650 V 160 A 360 A 1.95V @ 15V, 120A 625 W 1.8mJ (on), 4.41mJ (off) Standard 420 nC 66ns/185ns 400V, 120A, 4.7Ohm, 15V 202 ns -55°C ~ 175°C (TJ) Through Hole
IXGH25N160

IXGH25N160

IGBT 1600V 75A 300W TO247

IXYS
3,330 -

RFQ

IXGH25N160

Ficha técnica

Tube - Active NPT 1600 V 75 A 200 A 4.7V @ 20V, 100A 300 W - Standard 84 nC - - - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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