Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
AIKW40N65DH5XKSA1

AIKW40N65DH5XKSA1

IC DISCRETE 650V TO247-3

Infineon Technologies
2,516 -

RFQ

AIKW40N65DH5XKSA1

Ficha técnica

Tube Automotive, AEC-Q101, Trenchstop™ 5 Active Trench 650 V 74 A 120 A 2.1V @ 15V, 40A 250 W 350µJ (on), 100µJ (off) Standard 95 nC 19ns/165ns 400V, 20A, 15Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGWX5TS65HRC11

RGWX5TS65HRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,013 -

RFQ

RGWX5TS65HRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W - Standard 213 nC 62ns/237ns 400V, 37.5A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IKZ75N65EH5XKSA1

IKZ75N65EH5XKSA1

IGBT 650V 90A W/DIO TO247-4

Infineon Technologies
2,515 -

RFQ

IKZ75N65EH5XKSA1

Ficha técnica

Bulk,Tube TrenchStop™ 5 Active - 650 V 90 A 300 A 2.1V @ 15V, 75A 395 W 680µJ (on), 430µJ (off) Standard 166 nC 26ns/347ns 400V, 37.5A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
IKZ75N65ES5XKSA1

IKZ75N65ES5XKSA1

IGBT TRENCH 650V 80A TO247-4

Infineon Technologies
2,536 -

RFQ

IKZ75N65ES5XKSA1

Ficha técnica

Bulk,Tube TrenchStop™ 5 Active Trench 650 V 80 A 300 A 1.75V @ 15V, 75A 395 W 1.3mJ (on), 1.5mJ (off) Standard 164 nC 46ns/405ns 400V, 15A, 22.3Ohm, 15V 72 ns -40°C ~ 175°C (TJ) Through Hole
STGW100H65FB2-4

STGW100H65FB2-4

TRENCH GATE FIELD-STOP, 650 V, 1

STMicroelectronics
3,774 -

RFQ

Tube HB2 Active Trench Field Stop 650 V 145 A 300 A 1.8V @ 15V, 100A 441 W 1.06mJ (on), 1.14mJ (off) Standard 288 nC 23ns/141ns 400V, 100A, 3.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
RGW00TS65EHRC11

RGW00TS65EHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,137 -

RFQ

RGW00TS65EHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 96 A 200 A 1.9V @ 15V, 50A 254 W - Standard 141 nC 50ns/183ns 400V, 25A, 10Ohm, 15V 90 ns -40°C ~ 175°C (TJ) Through Hole
RGSX5TS65HRC11

RGSX5TS65HRC11

8S SHORT-CIRCUIT TOLERANCE, 650V

Rohm Semiconductor
2,077 -

RFQ

RGSX5TS65HRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 114 A 225 A 2.15V @ 15V, 75A 404 W 3.32mJ (on), 1.9mJ (off) Standard 79 nC 43ns/113ns 400V, 75A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IKW75N60H3FKSA1

IKW75N60H3FKSA1

IGBT 600V 80A 428W TO247-3

Infineon Technologies
2,975 -

RFQ

IKW75N60H3FKSA1

Ficha técnica

Tube TrenchStop® Active Trench Field Stop 600 V 80 A 225 A 2.3V @ 15V, 75A 428 W 3mJ (on), 1.7mJ (off) Standard 470 nC 31ns/265ns 400V, 75A, 5.2Ohm, 15V 190 ns -40°C ~ 175°C (TJ) Through Hole
RGT40TS65DGC13

RGT40TS65DGC13

5US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
2,643 -

RFQ

RGT40TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 40 A 60 A 2.1V @ 15V, 20A 144 W - Standard 40 nC 22ns/75ns 400V, 20A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
AIKW50N65DH5XKSA1

AIKW50N65DH5XKSA1

IC DISCRETE 650V TO247-3

Infineon Technologies
2,290 -

RFQ

AIKW50N65DH5XKSA1

Ficha técnica

Tube Automotive, AEC-Q101, Trenchstop™ 5 Active Trench 650 V - 150 A 2.1V @ 15V, 50A 270 W 490µJ (on), 140µJ (off) Standard 1018 nC 21ns/156ns 400V, 25A, 12Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
APT80GA60B

APT80GA60B

IGBT 600V 143A 625W TO247

Microchip Technology
3,519 -

RFQ

APT80GA60B

Ficha técnica

Tube - Active PT 600 V 143 A 240 A 2.5V @ 15V, 47A 625 W 840µJ (on), 751µJ (off) Standard 230 nC 23ns/158ns 400V, 47A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RGSX5TS65EGC11

RGSX5TS65EGC11

8S SHORT-CIRCUIT TOLERANCE, 650V

Rohm Semiconductor
2,727 -

RFQ

RGSX5TS65EGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 114 A 225 A 2.15V @ 15V, 75A 404 W 3.44mJ (on), 1.9mJ (off) Standard 79 nC 43ns/113ns 400V, 75A, 10Ohm, 15V 116 ns -40°C ~ 175°C (TJ) Through Hole
FGY60T120SQDN

FGY60T120SQDN

IGBT 1200V 60A UFS

onsemi
3,079 -

RFQ

FGY60T120SQDN

Ficha técnica

Tube - Active - 1200 V 120 A 240 A 1.95V @ 15V, 60A 517 W - Standard 311 nC 52ns/296ns 600V, 60A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IKZ75N65EL5XKSA1

IKZ75N65EL5XKSA1

IGBT 650V 100A TO247-4

Infineon Technologies
3,212 -

RFQ

IKZ75N65EL5XKSA1

Ficha técnica

Bulk,Tube TrenchStop™ 5 Active - 650 V 100 A 300 A 1.35V @ 15V, 75A 536 W 1.57mJ (on), 3.2mJ (off) Standard 436 nC 120ns/275ns 400V, 75A, 23Ohm, 15V 59 ns -40°C ~ 175°C (TJ) Through Hole
RGT50TS65DGC13

RGT50TS65DGC13

5US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
2,824 -

RFQ

RGT50TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 48 A 75 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/88ns 400V, 25A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
IXGT30N120B3D1

IXGT30N120B3D1

IGBT 1200V 300W TO268

IXYS
2,483 -

RFQ

IXGT30N120B3D1

Ficha técnica

Tube GenX3™ Active PT 1200 V - 150 A 3.5V @ 15V, 30A 300 W 3.47mJ (on), 2.16mJ (off) Standard 87 nC 16ns/127ns 960V, 30A, 5Ohm, 15V 100 ns -55°C ~ 150°C (TJ) Surface Mount
FGH75T65SQDNL4

FGH75T65SQDNL4

650V/75 FAST IGBT FSIII T

onsemi
3,944 -

RFQ

FGH75T65SQDNL4

Ficha técnica

Tube - Active Trench Field Stop 650 V 200 A 200 A 2.1V @ 15V, 75A 375 W 1.25mJ (on), 1.26mJ (off) Standard 152 nC 44ns/208ns 400V, 75A, 10Ohm, 15V 134 ns -55°C ~ 175°C (TJ) Through Hole
RGT60TS65DGC13

RGT60TS65DGC13

5US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
2,269 -

RFQ

RGT60TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 55 A 90 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 29ns/100ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
APT35GN120L2DQ2G

APT35GN120L2DQ2G

IGBT 1200V 94A 379W TO264

Microchip Technology
2,949 -

RFQ

APT35GN120L2DQ2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 94 A 105 A 2.1V @ 15V, 35A 379 W 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RGSX5TS65DHRC11

RGSX5TS65DHRC11

8S SHORT-CIRCUIT TOLERANCE, 650V

Rohm Semiconductor
3,514 -

RFQ

RGSX5TS65DHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 114 A 225 A 2.15V @ 15V, 75A 404 W 3.32mJ (on), 1.9mJ (off) Standard 79 nC 43ns/113ns 400V, 75A, 10Ohm, 15V 114 ns -40°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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