Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGCL80TS60GC13

RGCL80TS60GC13

LOW VCE(SAT) TYPE, 600V 40A, TO-

Rohm Semiconductor
3,197 -

RFQ

RGCL80TS60GC13

Ficha técnica

Tube - Active Trench Field Stop 600 V 65 A 160 A 1.8V @ 15V, 40A 148 W 1.11mJ (on), 1.68mJ (off) Standard 98 nC 53ns/227ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
FGH15T120SMD-F155

FGH15T120SMD-F155

IGBT 1200V 30A 333W TO247-3

onsemi
2,513 -

RFQ

FGH15T120SMD-F155

Ficha técnica

Tube - Active Trench Field Stop 1200 V 30 A 60 A 2.4V @ 15V, 15A 333 W 1.15mJ (on), 460µJ (off) Standard 128 nC 32ns/490ns 600V, 15A, 34Ohm, 15V 72 ns -55°C ~ 175°C (TJ) Through Hole
IKW50N65EH5XKSA1

IKW50N65EH5XKSA1

IGBT TRENCH 650V 80A TO247-3

Infineon Technologies
2,972 -

RFQ

IKW50N65EH5XKSA1

Ficha técnica

Tube TrenchStop™ Active Trench 650 V 80 A 200 A 2.1V @ 15V, 50A 275 W 1.5mJ (on), 500µJ (off) Standard 120 nC 25ns/172ns 400V, 50A, 12Ohm, 15V 81 ns -40°C ~ 175°C (TJ) Through Hole
STGWA75H65DFB2

STGWA75H65DFB2

TRENCH GATE FIELD-STOP, 650 V, 7

STMicroelectronics
3,324 -

RFQ

Tube HB2 Active Trench Field Stop 650 V 115 A 225 A 2V @ 15V, 75A 357 W 1.428mJ (on), 1.05mJ (off) Standard 207 nC 28ns/100ns 400V, 75A, 2.2Ohm, 15V 88 ns -55°C ~ 175°C (TJ) Through Hole
RGWS00TS65GC13

RGWS00TS65GC13

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,703 -

RFQ

RGWS00TS65GC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 88 A 150 A 2V @ 15V, 50A 245 W 980µJ (on), 910µJ (off) Standard 108 nC 46ns/145ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGCL60TS60DGC13

RGCL60TS60DGC13

LOW VCE(SAT) TYPE, 600V 30A, FRD

Rohm Semiconductor
2,541 -

RFQ

RGCL60TS60DGC13

Ficha técnica

Tube - Active Trench Field Stop 600 V 48 A 120 A 1.8V @ 15V, 30A 111 W 770µJ (on), 1.11mJ (off) Standard 68 nC 44ns/186ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
APT43GA90B

APT43GA90B

IGBT 900V 78A 337W TO-247

Microchip Technology
3,599 -

RFQ

APT43GA90B

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 78 A 129 A 3.1V @ 15V, 25A 337 W 875µJ (on), 425µJ (off) Standard 116 nC 12ns/82ns 600V, 25A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
STGWA25H120F2

STGWA25H120F2

IGBT HB 1200V 25A HS TO247-3

STMicroelectronics
2,371 -

RFQ

STGWA25H120F2

Ficha técnica

Tube - Active Trench Field Stop 1200 V 50 A 100 A 2.6V @ 15V, 25A 375 W 600µJ (on), 700µJ (off) Standard 100 nC 29ns/130ns 600V, 25A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
STGW75M65DF2

STGW75M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

STMicroelectronics
3,056 -

RFQ

STGW75M65DF2

Ficha técnica

Tube M Active Trench Field Stop 650 V 120 A 225 A 2.1V @ 15V, 75A 468 W 690µJ (on), 2.54mJ (off) Standard 225 nC 47ns/125ns 400V, 75A, 3.3Ohm, 15V 165 ns -55°C ~ 175°C (TJ) Through Hole
RGS30TSX2GC11

RGS30TSX2GC11

10US SHORT-CIRCUIT TOLERANCE, 12

Rohm Semiconductor
2,168 -

RFQ

Tube - Active Trench Field Stop 1200 V 30 A 45 A 2.1V @ 15V, 15A 267 W 740µJ (on), 600µJ (off) Standard 41 nC 30ns/70ns 600V, 15A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW60TS65HRC11

RGW60TS65HRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,671 -

RFQ

RGW60TS65HRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 64 A 120 A 1.9V @ 15V, 30A 178 W - Standard 84 nC 36ns/107ns 400V, 15A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGWS00TS65DGC13

RGWS00TS65DGC13

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,852 -

RFQ

RGWS00TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 88 A 150 A 2V @ 15V, 50A 245 W 980µJ (on), 910µJ (off) Standard 108 nC 46ns/145ns 400V, 50A, 10Ohm, 15V 88 ns -40°C ~ 175°C (TJ) Through Hole
RGTV80TS65DGC11

RGTV80TS65DGC11

650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor
2,248 -

RFQ

Tube - Active Trench Field Stop 650 V 78 A 160 A 1.9V @ 15V, 40A 234 W 1.02mJ (on), 710µJ (off) Standard 81 nC 39ns/113ns 400V, 40A, 10Ohm, 15V 101 ns -40°C ~ 175°C (TJ) Through Hole
STGW25H120DF2

STGW25H120DF2

IGBT H-SERIES 1200V 25A TO-247

STMicroelectronics
3,683 -

RFQ

STGW25H120DF2

Ficha técnica

Tube - Active Trench Field Stop 1200 V 50 A 100 A 2.6V @ 15V, 25A 375 W 600µJ (on), 700µJ (off) Standard 100 nC 29ns/130ns 600V, 25A, 10Ohm, 15V 303 ns -55°C ~ 175°C (TJ) Through Hole
RGWX5TS65DHRC11

RGWX5TS65DHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,672 -

RFQ

RGWX5TS65DHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W - Standard 213 nC 62ns/237ns 400V, 37.5A, 10Ohm, 15V 92 ns -40°C ~ 175°C (TJ) Through Hole
AFGHL75T65SQDT

AFGHL75T65SQDT

650V/75A FS4 IGBT TO247 L

onsemi
3,312 -

RFQ

AFGHL75T65SQDT

Ficha técnica

Tube Automotive, AEC-Q101 Active Trench Field Stop 650 V 80 A 300 A 2.1V @ 15V, 75A 375 W 2.12mJ (on), 1.14mJ (off) Standard 136 nC 24ns/106ns 400V, 75A, 4.7Ohm, 15V 75 ns -55°C ~ 175°C (TJ) Through Hole
RGTH80TS65DGC13

RGTH80TS65DGC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor
3,543 -

RFQ

RGTH80TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 70 A 160 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/120ns 400V, 40A, 10Ohm, 15V 236 ns -40°C ~ 175°C (TJ) Through Hole
AIKW30N60CTXKSA1

AIKW30N60CTXKSA1

IC DISCRETE 600V TO247-3

Infineon Technologies
3,778 -

RFQ

AIKW30N60CTXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, TrenchStop™ Active Trench Field Stop 600 V 60 A 90 A 2.05V @ 15V, 30A 187 W 690µJ (on), 770µJ (off) Standard 167 nC 23ns/254ns 400V, 30A, 10.6Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGWS80TS65DGC13

RGWS80TS65DGC13

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,260 -

RFQ

RGWS80TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 71 A 120 A 2V @ 15V, 40A 202 W 700µJ (on), 660µJ (off) Standard 83 nC 40ns/114ns 400V, 40A, 10Ohm, 15V 88 ns -40°C ~ 175°C (TJ) Through Hole
RGTH00TS65DGC13

RGTH00TS65DGC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor
3,969 -

RFQ

RGTH00TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V 54 ns -40°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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