Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLU3636-701TRP

IRLU3636-701TRP

MOSFET N-CH 60V 50A IPAK

Infineon Technologies
2,918 -

RFQ

IRLU3636-701TRP

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
SPP11N65C3HKSA1

SPP11N65C3HKSA1

MOSFET N-CH 650V 11A TO-220

Infineon Technologies
2,616 -

RFQ

SPP11N65C3HKSA1

Ficha técnica

Tube CoolMOS™ Active - - - 11A (Tc) - - - - - - - - - -
IPD60R380E6BTMA1

IPD60R380E6BTMA1

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
57,070 -

RFQ

IPD60R380E6BTMA1

Ficha técnica

Bulk,Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies
40,500 -

RFQ

IPU60R1K4C6BKMA1

Ficha técnica

Bulk,Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V Super Junction 28.4W (Tc) -55°C ~ 155°C (TJ) Through Hole
IPD60R380E6ATMA2

IPD60R380E6ATMA2

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
7,500 -

RFQ

IPD60R380E6ATMA2

Ficha técnica

Bulk,Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU80R1K0CEAKMA1

IPU80R1K0CEAKMA1

MOSFET N-CH 800V 5.7A TO251-3

Infineon Technologies
99,000 -

RFQ

IPU80R1K0CEAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU80R2K8CEAKMA1

IPU80R2K8CEAKMA1

MOSFET N-CH 800V 1.9A TO251-3

Infineon Technologies
14,499 -

RFQ

IPU80R2K8CEAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU80R1K4CEAKMA1

IPU80R1K4CEAKMA1

MOSFET N-CH 800V 3.9A TO251-3

Infineon Technologies
2,322 -

RFQ

IPU80R1K4CEAKMA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
64-0055PBF

64-0055PBF

MOSFET N-CH 60V 160A TO220AB

Infineon Technologies
3,798 -

RFQ

64-0055PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUXMOS20956STR

AUXMOS20956STR

MOSFET N-CH 16SOIC

Infineon Technologies
2,922 -

RFQ

AUXMOS20956STR

Ficha técnica

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
AUXS20956S

AUXS20956S

MOSFET N-CH 16SOIC

Infineon Technologies
2,419 -

RFQ

AUXS20956S

Ficha técnica

Tube - Obsolete - - - - - - - - - - - - - -
IRFC3004EB

IRFC3004EB

MOSFET N-CH WAFER

Infineon Technologies
3,329 -

RFQ

IRFC3004EB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC3006EB

IRFC3006EB

MOSFET N-CH WAFER

Infineon Technologies
3,387 -

RFQ

IRFC3006EB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC3107EB

IRFC3107EB

MOSFET N-CH WAFER

Infineon Technologies
2,948 -

RFQ

IRFC3107EB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC3205ZEB

IRFC3205ZEB

MOSFET N-CH WAFER

Infineon Technologies
2,579 -

RFQ

IRFC3205ZEB

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IRFC3206EB

IRFC3206EB

MOSFET N-CH WAFER

Infineon Technologies
2,051 -

RFQ

IRFC3206EB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC3710ZEB

IRFC3710ZEB

MOSFET N-CH WAFER

Infineon Technologies
2,517 -

RFQ

IRFC3710ZEB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
BSD316SNH6327XTSA1

BSD316SNH6327XTSA1

MOSFET N-CH 30V 1.4A SOT363-6

Infineon Technologies
2,954 -

RFQ

BSD316SNH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 3.7µA 0.6 nC @ 5 V ±20V 94 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS806NEH6327XTSA1

BSS806NEH6327XTSA1

MOSFET N-CH 20V 2.3A SOT23-3

Infineon Technologies
7,708 -

RFQ

BSS806NEH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 1.8V, 2.5V 57mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7 nC @ 2.5 V ±8V 529 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC4020D

IRFC4020D

MOSFET N-CH WAFER

Infineon Technologies
2,434 -

RFQ

IRFC4020D

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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