Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW65R190CFDAFKSA1

IPW65R190CFDAFKSA1

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies
2,762 -

RFQ

IPW65R190CFDAFKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPW80R290C3AFKSA1

IPW80R290C3AFKSA1

MOSFET N-CH 800V TO247

Infineon Technologies
2,140 -

RFQ

IPW80R290C3AFKSA1

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPZ60R041P6FKSA1

IPZ60R041P6FKSA1

MOSFET N-CH 600V 77.5A TO247-4

Infineon Technologies
14,989 -

RFQ

IPZ60R041P6FKSA1

Ficha técnica

Tube,Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 77.5A (Tc) 10V 41mOhm @ 35.5A, 10V 4.5V @ 2.96mA 170 nC @ 10 V ±20V 8180 pF @ 100 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZ60R125P6FKSA1

IPZ60R125P6FKSA1

MOSFET N-CH 600V 37.9A TO247-4

Infineon Technologies
2,411 -

RFQ

IPZ60R125P6FKSA1

Ficha técnica

Tube,Tube CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP120N06S402AKSA2

IPP120N06S402AKSA2

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
12,852 -

RFQ

IPP120N06S402AKSA2

Ficha técnica

Tube,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 140µA 195 nC @ 10 V ±20V 15750 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50N06S4L12ATMA1

IPD50N06S4L12ATMA1

MOSFET N-CH 60V 50A TO252-3-11

Infineon Technologies
3,046 -

RFQ

IPD50N06S4L12ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 2.2V @ 20µA 40 nC @ 10 V ±16V 2890 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI11N60C3AAKSA2

IPI11N60C3AAKSA2

MOSFET N-CH I2PAK

Infineon Technologies
21,902 -

RFQ

IPI11N60C3AAKSA2

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
62-0275PBF

62-0275PBF

IC MOSFET 8PQFN

Infineon Technologies
3,952 -

RFQ

62-0275PBF

Ficha técnica

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
SPD04N60S5BTMA1

SPD04N60S5BTMA1

MOSFET N-CH 600V 4.5A TO252-3

Infineon Technologies
3,642 -

RFQ

SPD04N60S5BTMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB160N04S2L03ATMA2

IPB160N04S2L03ATMA2

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
2,109 -

RFQ

IPB160N04S2L03ATMA2

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 5 V ±20V 6000 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI100N04S303MATMA1

IPI100N04S303MATMA1

MOSFET N-CH TO262-3

Infineon Technologies
3,620 -

RFQ

IPI100N04S303MATMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPP90N06S4L04AKSA2

IPP90N06S4L04AKSA2

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
3,775 -

RFQ

IPP90N06S4L04AKSA2

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N04S303MATMA2

IPI100N04S303MATMA2

MOSFET N-CH TO262-3

Infineon Technologies
2,012 -

RFQ

IPI100N04S303MATMA2

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPI120N06S403AKSA2

IPI120N06S403AKSA2

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
2,734 -

RFQ

IPI120N06S403AKSA2

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 120µA 160 nC @ 10 V ±20V 13150 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N06S4H1AKSA2

IPI120N06S4H1AKSA2

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies
3,637 -

RFQ

IPI120N06S4H1AKSA2

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S4L05AKSA2

IPI80N06S4L05AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies
3,983 -

RFQ

IPI80N06S4L05AKSA2

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 4.5V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP70P04P409AKSA1

IPP70P04P409AKSA1

MOSFET P-CH 40V 72A TO220-3

Infineon Technologies
3,005 -

RFQ

IPP70P04P409AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.4mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N06S4L05AKSA2

IPP80N06S4L05AKSA2

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
3,076 -

RFQ

IPP80N06S4L05AKSA2

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 4.5V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P04P405AKSA1

IPP80P04P405AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies
2,366 -

RFQ

IPP80P04P405AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-9149PBF

64-9149PBF

MOSFET N-CH 60V DIRECTFETL8

Infineon Technologies
2,602 -

RFQ

64-9149PBF

Ficha técnica

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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