Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFQ10N80P

IXFQ10N80P

MOSFET N-CH 800V 10A TO3P

IXYS
3,002 -

RFQ

IXFQ10N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ12N80P

IXFQ12N80P

MOSFET N-CH 800V 12A TO3P

IXYS
2,128 -

RFQ

IXFQ12N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 850mOhm @ 500mA, 10V 5.5V @ 2.5mA 51 nC @ 10 V ±30V 2800 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ14N80P

IXFQ14N80P

MOSFET N-CH 800V 14A TO3P

IXYS
3,633 -

RFQ

IXFQ14N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 720mOhm @ 500mA, 10V 5.5V @ 4mA 61 nC @ 10 V ±30V 3900 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ21N50Q

IXFQ21N50Q

MOSFET N-CH 500V 21A TO3P

IXYS
3,780 -

RFQ

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) - - - - - - - - - Through Hole
IXFQ23N60Q

IXFQ23N60Q

MOSFET N-CH 600V 23A TO268

IXYS
2,002 -

RFQ

Box HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) - - - - - - - - - Surface Mount
IXFQ24N50Q

IXFQ24N50Q

MOSFET N-CH 500V 24A TO3P

IXYS
2,669 -

RFQ

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) - - - - - - - - - Through Hole
IXFQ26N50Q

IXFQ26N50Q

MOSFET N-CH 500V 26A TO3P

IXYS
3,341 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) - - - - - - - - - Through Hole
IXFR14N100Q2

IXFR14N100Q2

MOSFET N-CH 1000V 9.5A ISOPLS247

IXYS
2,698 -

RFQ

IXFR14N100Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 9.5A (Tc) 10V 1.1Ohm @ 7A, 10V 5V @ 4mA 83 nC @ 10 V ±30V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR15N80Q

IXFR15N80Q

MOSFET N-CH 800V 13A ISOPLUS247

IXYS
3,467 -

RFQ

IXFR15N80Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 600mOhm @ 7.5A, 10V 4.5V @ 4mA 90 nC @ 10 V ±20V 4300 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR21N100Q

IXFR21N100Q

MOSFET N-CH 1000V 18A ISOPLUS247

IXYS
3,241 -

RFQ

IXFR21N100Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 500mOhm @ 10.5A, 10V 5V @ 4mA 170 nC @ 10 V ±20V 5900 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR24N50Q

IXFR24N50Q

MOSFET N-CH 500V 22A ISOPLUS247

IXYS
3,802 -

RFQ

IXFR24N50Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 12A, 10V 4.5V @ 4mA 95 nC @ 10 V ±20V 3900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR24N90Q

IXFR24N90Q

MOSFET N-CH 900V ISOPLUS247

IXYS
3,288 -

RFQ

IXFR24N90Q

Ficha técnica

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 900 V - - - - - - - - - - Through Hole
IXFR26N50Q

IXFR26N50Q

MOSFET N-CH 500V 24A ISOPLUS247

IXYS
3,034 -

RFQ

IXFR26N50Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 200mOhm @ 13A, 10V 4.5V @ 4mA 95 nC @ 10 V ±20V 3900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR26N60Q

IXFR26N60Q

MOSFET N-CH 600V 23A ISOPLUS247

IXYS
3,306 -

RFQ

IXFR26N60Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 250mOhm @ 13A, 10V 4.5V @ 4mA 200 nC @ 10 V ±20V 5100 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR27N80Q

IXFR27N80Q

MOSFET N-CH 800V 27A ISOPLUS247

IXYS
3,428 -

RFQ

IXFR27N80Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V 300mOhm @ 13.5A, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 7600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR32N50Q

IXFR32N50Q

MOSFET N-CH 500V 30A ISOPLUS247

IXYS
3,222 -

RFQ

IXFR32N50Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 160mOhm @ 16A, 10V 4.5V @ 4mA 150 nC @ 10 V ±20V 3950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR38N80Q2

IXFR38N80Q2

MOSFET N-CH 800V 28A ISOPLUS247

IXYS
3,826 -

RFQ

IXFR38N80Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 800 V 28A (Tc) 10V 240mOhm @ 19A, 10V 4.5V @ 8mA 190 nC @ 10 V ±30V 8340 pF @ 25 V - 416W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR48N50Q

IXFR48N50Q

MOSFET N-CH 500V 40A ISOPLUS247

IXYS
3,464 -

RFQ

IXFR48N50Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 110mOhm @ 24A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 7000 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR50N50

IXFR50N50

MOSFET N-CH 500V 43A ISOPLUS247

IXYS
3,840 -

RFQ

IXFR50N50

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 43A (Tc) 10V 100mOhm @ 25A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 400W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXFR52N30Q

IXFR52N30Q

MOSFET N-CH 300V ISOPLUS247

IXYS
2,811 -

RFQ

Box - Obsolete N-Channel MOSFET (Metal Oxide) 300 V - - - - - - - - - - Through Hole
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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