Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFV96N20P

IXFV96N20P

MOSFET N-CH 200V 96A PLUS220

IXYS
3,753 -

RFQ

IXFV96N20P

Ficha técnica

Tube PolarHT™ HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX12N90Q

IXFX12N90Q

MOSFET N-CH 900V 12A PLUS247-3

IXYS
2,226 -

RFQ

IXFX12N90Q

Ficha técnica

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 5.5V @ 4mA 90 nC @ 10 V ±20V 2900 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX21N100Q

IXFX21N100Q

MOSFET N-CH 1000V 21A PLUS247-3

IXYS
3,869 -

RFQ

IXFX21N100Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 500mOhm @ 10.5A, 10V 5.5V @ 4mA 170 nC @ 10 V ±20V 6900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX24N90Q

IXFX24N90Q

MOSFET N-CH 900V 24A PLUS247-3

IXYS
2,667 -

RFQ

IXFX24N90Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 450mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 5900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX26N60Q

IXFX26N60Q

MOSFET N-CH 600V 26A PLUS247-3

IXYS
3,730 -

RFQ

IXFX26N60Q

Ficha técnica

Box HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 13A, 10V 4.5V @ 4mA 200 nC @ 10 V ±20V 5100 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX30N100Q2

IXFX30N100Q2

MOSFET N-CH 1000V 30A PLUS247-3

IXYS
2,647 -

RFQ

IXFX30N100Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 400mOhm @ 15A, 10V 5V @ 8mA 186 nC @ 10 V ±30V 8200 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX38N80Q2

IXFX38N80Q2

MOSFET N-CH 800V 38A PLUS247-3

IXYS
2,047 -

RFQ

IXFX38N80Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) 10V 220mOhm @ 19A, 10V 4.5V @ 8mA 190 nC @ 10 V ±30V 8340 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX44N55Q

IXFX44N55Q

MOSFET N-CH 550V 44A PLUS247-3

IXYS
2,291 -

RFQ

IXFX44N55Q

Ficha técnica

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 550 V 44A (Tc) 10V 120mOhm @ 22A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 6400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX48N50Q

IXFX48N50Q

MOSFET N-CH 500V 48A PLUS247-3

IXYS
3,315 -

RFQ

IXFX48N50Q

Ficha técnica

Tube HiPerFET™, Q Class Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 24A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 7000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX88N20Q

IXFX88N20Q

MOSFET N-CH 200V 88A PLUS247-3

IXYS
3,701 -

RFQ

IXFX88N20Q

Ficha técnica

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 4mA 146 nC @ 10 V ±30V 4150 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKC13N80C

IXKC13N80C

MOSFET N-CH 800V 13A ISOPLUS220

IXYS
2,561 -

RFQ

IXKC13N80C

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 290mOhm @ 9A, 10V 4V @ 1mA 90 nC @ 10 V ±20V 2300 pF @ 25 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKC25N80C

IXKC25N80C

MOSFET N-CH 800V 25A ISOPLUS220

IXYS
3,701 -

RFQ

IXKC25N80C

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 150mOhm @ 18A, 10V 4V @ 2mA 180 nC @ 10 V ±20V 4600 pF @ 25 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKC40N60C

IXKC40N60C

MOSFET N-CH 600V 28A ISOPLUS220

IXYS
2,824 -

RFQ

IXKC40N60C

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 95mOhm @ 28A, 10V 3.9V @ 2mA 230 nC @ 10 V ±20V 4800 pF @ 25 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKG25N80C

IXKG25N80C

MOSFET N-CH 800V 25A ISO264

IXYS
3,016 -

RFQ

IXKG25N80C

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 150mOhm @ 9A, 10V 4V @ 2mA 166 nC @ 10 V ±20V - - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA110N055P

IXTA110N055P

MOSFET N-CH 55V 110A TO263

IXYS
2,607 -

RFQ

IXTA110N055P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 13.5mOhm @ 500mA, 10V 5.5V @ 250µA 76 nC @ 10 V ±20V 2210 pF @ 25 V - 390W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA110N055T

IXTA110N055T

MOSFET N-CH 55V 110A TO263

IXYS
3,986 -

RFQ

IXTA110N055T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 100µA 67 nC @ 10 V ±20V 3080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA110N055T7

IXTA110N055T7

MOSFET N-CH 55V 110A TO263-7

IXYS
2,108 -

RFQ

IXTA110N055T7

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 100µA 67 nC @ 10 V ±20V 3080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA152N085T

IXTA152N085T

MOSFET N-CH 85V 152A TO263

IXYS
2,586 -

RFQ

IXTA152N085T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 152A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 114 nC @ 10 V ±20V 5500 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA152N085T7

IXTA152N085T7

MOSFET N-CH 85V 152A TO263-7

IXYS
2,602 -

RFQ

IXTA152N085T7

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 152A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 114 nC @ 10 V ±20V 5500 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA160N075T

IXTA160N075T

MOSFET N-CH 75V 160A TO263

IXYS
3,255 -

RFQ

IXTA160N075T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 4950 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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