Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK20N120

IXFK20N120

MOSFET N-CH 1200V 20A TO264AA

IXYS
3,260 -

RFQ

IXFK20N120

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 750mOhm @ 500mA, 10V 4.5V @ 8mA 160 nC @ 10 V ±30V 7400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK21N100Q

IXFK21N100Q

MOSFET N-CH 1000V 21A TO264AA

IXYS
3,638 -

RFQ

IXFK21N100Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 500mOhm @ 10.5A, 10V 5.5V @ 4mA 170 nC @ 10 V ±20V 6900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK24N90Q

IXFK24N90Q

MOSFET N-CH 900V 24A TO264AA

IXYS
2,408 -

RFQ

IXFK24N90Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 450mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 5900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK26N60Q

IXFK26N60Q

MOSFET N-CH 600V 26A TO264AA

IXYS
3,125 -

RFQ

IXFK26N60Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 13A, 10V 4.5V @ 4mA 200 nC @ 10 V ±20V 5100 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK30N100Q2

IXFK30N100Q2

MOSFET N-CH 1000V 30A TO264AA

IXYS
2,403 -

RFQ

IXFK30N100Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 400mOhm @ 15A, 10V 5V @ 8mA 186 nC @ 10 V ±30V 8200 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK32N50Q

IXFK32N50Q

MOSFET N-CH 500V 32A TO264AA

IXYS
2,639 -

RFQ

IXFK32N50Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 160mOhm @ 16A, 10V 4.5V @ 4mA 150 nC @ 10 V ±20V 3950 pF @ 25 V - 416W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK38N80Q2

IXFK38N80Q2

MOSFET N-CH 800V 38A TO264AA

IXYS
3,988 -

RFQ

IXFK38N80Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) 10V 220mOhm @ 19A, 10V 4.5V @ 8mA 190 nC @ 10 V ±30V 8340 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK44N55Q

IXFK44N55Q

MOSFET N-CH 550V 44A TO264AA

IXYS
2,023 -

RFQ

IXFK44N55Q

Ficha técnica

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 550 V 44A (Tc) 10V 120mOhm @ 22A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 6400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK48N50Q

IXFK48N50Q

MOSFET N-CH 500V 48A TO264AA

IXYS
2,152 -

RFQ

IXFK48N50Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 24A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 7000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK52N60Q2

IXFK52N60Q2

MOSFET N-CH 600V 52A TO264AA

IXYS
2,689 -

RFQ

IXFK52N60Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 115mOhm @ 500mA, 10V 4.5V @ 8mA 198 nC @ 10 V ±30V 6800 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK60N55Q2

IXFK60N55Q2

MOSFET N-CH 550V 60A TO264AA

IXYS
2,988 -

RFQ

IXFK60N55Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 550 V 60A (Tc) 10V 88mOhm @ 30A, 10V 4.5V @ 8mA 200 nC @ 10 V ±30V 7300 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK66N50Q2

IXFK66N50Q2

MOSFET N-CH 500V 66A TO264AA

IXYS
2,874 -

RFQ

IXFK66N50Q2

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 66A (Tc) 10V 80mOhm @ 500mA, 10V 4.5V @ 8mA 200 nC @ 10 V ±30V 8400 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK73N30Q

IXFK73N30Q

MOSFET N-CH 300V 73A TO264AA

IXYS
3,406 -

RFQ

IXFK73N30Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 300 V 73A (Tc) 10V 45mOhm @ 500mA, 10V 4V @ 4mA 195 nC @ 10 V ±30V 5400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK88N20Q

IXFK88N20Q

MOSFET N-CH 200V 88A TO264AA

IXYS
2,406 -

RFQ

IXFK88N20Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 4mA 146 nC @ 10 V ±30V 4150 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL38N100Q2

IXFL38N100Q2

MOSFET N-CH 1000V 29A ISOPLUS264

IXYS
3,814 -

RFQ

IXFL38N100Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 29A (Tc) 10V 280mOhm @ 19A, 10V 5.5V @ 8mA 250 nC @ 10 V ±30V 13500 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL39N90

IXFL39N90

MOSFET N-CH 900V 34A ISOPLUS264

IXYS
3,851 -

RFQ

IXFL39N90

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 900 V 34A (Tc) 10V 220mOhm @ 19.5A, 10V 5V @ 8mA 375 nC @ 10 V ±20V 13400 pF @ 25 V - 580W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL44N60

IXFL44N60

MOSFET N-CH 600V 41A ISOPLUS264

IXYS
3,815 -

RFQ

IXFL44N60

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 130mOhm @ 22A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 8900 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL44N80

IXFL44N80

MOSFET N-CH 800V 44A ISOPLUS264

IXYS
3,520 -

RFQ

IXFL44N80

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 165mOhm @ 22A, 10V 4V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 550W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL60N60

IXFL60N60

MOSFET N-CH 600V 60A ISOPLUS264

IXYS
2,156 -

RFQ

IXFL60N60

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 80mOhm @ 30A, 10V 4V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL70N60Q2

IXFL70N60Q2

MOSFET N-CH 600V 37A ISOPLUS264

IXYS
2,220 -

RFQ

IXFL70N60Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 92mOhm @ 35A, 10V 5.5V @ 8mA 265 nC @ 10 V ±30V 12000 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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