Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK300N20X3

IXFK300N20X3

MOSFET N-CH 200V 300A TO264

IXYS
3,308 -

RFQ

IXFK300N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 4mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX200N10L2

IXTX200N10L2

MOSFET N-CH 100V 200A PLUS247-3

IXYS
2,024 -

RFQ

IXTX200N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 11mOhm @ 100A, 10V 4.5V @ 3mA 540 nC @ 10 V ±20V 23000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN40P50P

IXTN40P50P

MOSFET P-CH 500V 40A SOT227B

IXYS
2,950 -

RFQ

IXTN40P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 230mOhm @ 500mA, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX110N20L2

IXTX110N20L2

MOSFET N-CH 200V 110A PLUS247-3

IXYS
2,680 -

RFQ

IXTX110N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 3mA 500 nC @ 10 V ±20V 23000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN100N50P

IXFN100N50P

MOSFET N-CH 500V 90A SOT-227B

IXYS
2,551 -

RFQ

IXFN100N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 90A (Tc) 10V 49mOhm @ 50A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 20000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTT1N300P3HV

IXTT1N300P3HV

MOSFET N-CH 3000V 1A TO268

IXYS
2,712 -

RFQ

IXTT1N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 1A (Tc) 10V 50Ohm @ 500mA, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 895 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK46N50L

IXTK46N50L

MOSFET N-CH 500V 46A TO264

IXYS
3,404 -

RFQ

IXTK46N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 20V 160mOhm @ 500mA, 20V 6V @ 250µA 260 nC @ 15 V ±30V 7000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN210N20P

IXFN210N20P

MOSFET N-CH 200V 188A SOT-227B

IXYS
3,298 -

RFQ

IXFN210N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 188A (Tc) 10V 10.5mOhm @ 105A, 10V 4.5V @ 8mA 255 nC @ 10 V ±20V 18600 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN400N15X3

IXFN400N15X3

MOSFET N-CH 150V 400A SOT227B

IXYS
2,504 -

RFQ

IXFN400N15X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 2.5mOhm @ 200A, 10V 4.5V @ 8mA 365 nC @ 10 V ±20V 23700 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFB30N120P

IXFB30N120P

MOSFET N-CH 1200V 30A PLUS264

IXYS
3,482 -

RFQ

IXFB30N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 30A (Tc) 10V 350mOhm @ 500mA, 10V 6.5V @ 1mA 310 nC @ 10 V ±20V 22500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN400N15X4

IXTN400N15X4

MOSFET N-CH 150V 400A SOT227B

IXYS
2,585 -

RFQ

IXTN400N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 2.7mOhm @ 100A, 10V 4.5V @ 1mA 430 nC @ 10 V ±20V 14500 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN170N65X2

IXFN170N65X2

MOSFET N-CH 650V 170A SOT227B

IXYS
2,480 -

RFQ

IXFN170N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 170A (Tc) 10V 13mOhm @ 85A, 10V 5V @ 8mA 434 nC @ 10 V ±30V 27000 pF @ 25 V - 1170W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTF1N450

IXTF1N450

MOSFET N-CH 4500V 900MA I4PAC

IXYS
3,684 -

RFQ

IXTF1N450

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 900mA (Tc) 10V 85Ohm @ 50mA, 10V 6.5V @ 250µA 40 nC @ 10 V ±20V 1730 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN200N10P

IXFN200N10P

MOSFET N-CH 100V 200A SOT-227B

IXYS
170 -

RFQ

IXFN200N10P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 7.5mOhm @ 500mA, 10V 5V @ 8mA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFK360N15T2

IXFK360N15T2

MOSFET N-CH 150V 360A TO264AA

IXYS
3,266 -

RFQ

IXFK360N15T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 360A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN140N30P

IXFN140N30P

MOSFET N-CH 300V 110A SOT-227B

IXYS
2,581 -

RFQ

IXFN140N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 110A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN80N50P

IXFN80N50P

MOSFET N-CH 500V 66A SOT227B

IXYS
2,673 -

RFQ

IXFN80N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 66A (Tc) 10V 65mOhm @ 500mA, 10V 5V @ 8mA 195 nC @ 10 V ±30V 12700 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN300N20X3

IXFN300N20X3

MOSFET N-CH 200V 300A SOT227B

IXYS
3,812 -

RFQ

IXFN300N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 3.5mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN150N15

IXFN150N15

MOSFET N-CH 150V 150A SOT227B

IXYS
3,431 -

RFQ

IXFN150N15

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 12.5mOhm @ 75A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFV52N30P

IXFV52N30P

MOSFET N-CH 300V 52A PLUS220

IXYS
3,828 -

RFQ

IXFV52N30P

Ficha técnica

Tube PolarHT™ HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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