Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH98N60X3

IXFH98N60X3

MOSFET ULTRA JCT 600V 98A TO247

IXYS
3,359 -

RFQ

IXFH98N60X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 98A (Tc) 10V 30mOhm @ 49A, 10V 5V @ 4mA 90 nC @ 10 V ±20V 6250 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH50N85X

IXFH50N85X

MOSFET N-CH 850V 50A TO247

IXYS
3,660 -

RFQ

IXFH50N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 50A (Tc) 10V 105mOhm @ 500mA, 10V 5.5V @ 4mA 152 nC @ 10 V ±30V 4480 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH10P50P

IXTH10P50P

MOSFET P-CH 500V 10A TO247

IXYS
128 -

RFQ

IXTH10P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 1Ohm @ 5A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 2840 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH40N50L2

IXTH40N50L2

MOSFET N-CH 500V 40A TO247

IXYS
3,620 -

RFQ

IXTH40N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1N170DHV

IXTA1N170DHV

MOSFET N-CH 1700V 1A TO263

IXYS
3,056 -

RFQ

IXTA1N170DHV

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1700 V 1A (Tc) 10V 16Ohm @ 500mA, 0V - 47 nC @ 5 V ±20V 3090 pF @ 25 V Depletion Mode 290W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH170N25X3

IXFH170N25X3

MOSFET N-CH 250V 170A TO247

IXYS
3,330 -

RFQ

IXFH170N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 170A (Tc) 10V 7.4mOhm @ 85A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 13500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT30N60L2

IXTT30N60L2

MOSFET N-CH 600V 30A TO268

IXYS
2,963 -

RFQ

IXTT30N60L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335 nC @ 10 V ±20V 10700 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH220N20X3

IXFH220N20X3

MOSFET N-CH 200V 220A TO247

IXYS
2,886 -

RFQ

IXFH220N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX64N60P

IXFX64N60P

MOSFET N-CH 600V 64A PLUS247-3

IXYS
3,542 -

RFQ

IXFX64N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 96mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH32N100X

IXFH32N100X

MOSFET N-CH 1000V 32A TO247

IXYS
3,051 -

RFQ

IXFH32N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 220mOhm @ 16A, 10V 6V @ 4mA 130 nC @ 10 V ±30V 4075 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH120N15P

IXFH120N15P

MOSFET N-CH 150V 120A TO247AD

IXYS
2,628 -

RFQ

IXFH120N15P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 4mA 150 nC @ 10 V ±20V 4900 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK40P50P

IXTK40P50P

MOSFET P-CH 500V 40A TO264

IXYS
3,990 -

RFQ

IXTK40P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 230mOhm @ 20A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT150N30X3HV

IXFT150N30X3HV

MOSFET N-CH 300V 150A TO268HV

IXYS
2,064 -

RFQ

IXFT150N30X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 254 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX120N65X2

IXFX120N65X2

MOSFET N-CH 650V 120A PLUS247-3

IXYS
3,551 -

RFQ

IXFX120N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN140N20P

IXFN140N20P

MOSFET N-CH 200V 115A SOT227B

IXYS
2,896 -

RFQ

IXFN140N20P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 115A (Tc) 10V, 15V 18mOhm @ 70A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXTH50P10

IXTH50P10

MOSFET P-CH 100V 50A TO247

IXYS
2,349 -

RFQ

IXTH50P10

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 55mOhm @ 25A, 10V 5V @ 250µA 140 nC @ 10 V ±20V 4350 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH10P60

IXTH10P60

MOSFET P-CH 600V 10A TO247

IXYS
2,245 -

RFQ

IXTH10P60

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 1Ohm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB60N80P

IXFB60N80P

MOSFET N-CH 800V 60A PLUS264

IXYS
2,049 -

RFQ

IXFB60N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 60A (Tc) 10V 140mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN420N10T

IXFN420N10T

MOSFET N-CH 100V 420A SOT227B

IXYS
2,508 -

RFQ

IXFN420N10T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.3mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFK240N25X3

IXFK240N25X3

MOSFET N-CH 250V 240A TO264

IXYS
2,051 -

RFQ

IXFK240N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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