Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ69N30PM

IXTQ69N30PM

MOSFET N-CH 300V 25A TO3PFP

IXYS
3,443 -

RFQ

IXTQ69N30PM

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 25A (Tc) 10V 49mOhm @ 34.5A, 10V 5V @ 250µA 156 nC @ 10 V ±20V 4960 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N120HV

IXTA3N120HV

MOSFET N-CH 1200V 3A TO263

IXYS
2,813 -

RFQ

IXTA3N120HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 500mA, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1100 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP16N85X

IXFP16N85X

IXFP16N85X

IXYS
3,738 -

RFQ

Tube HiPerFET™, Ultra X Active - - - - - - - - - - - - - -
IXTA3N150HV-TRL

IXTA3N150HV-TRL

MOSFET N-CH 1500V 3A TO263HV

IXYS
2,250 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1500 V 3A (Tc) 10V 7.3Ohm @ 1.5A, 10V 5V @ 250µA 38.6 nC @ 10 V ±30V 1375 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH7N100P

IXFH7N100P

MOSFET N-CH 1000V 7A TO247

IXYS
2,035 -

RFQ

IXFH7N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP16N85XM

IXFP16N85XM

IXFP16N85XM

IXYS
3,427 -

RFQ

Tube HiPerFET™, Ultra X Active - - - - - - - - - - - - - -
IXTT10N100D

IXTT10N100D

MOSFET N-CH 1000V 10A TO268

IXYS
2,606 -

RFQ

IXTT10N100D

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.4Ohm @ 10A, 10V 3.5V @ 250µA 130 nC @ 10 V ±30V 2500 pF @ 25 V Depletion Mode 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT18N100Q3

IXFT18N100Q3

MOSFET N-CH 1000V 18A TO268

IXYS
3,527 -

RFQ

IXFT18N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 660mOhm @ 9A, 10V 6.5V @ 4mA 90 nC @ 10 V ±30V 4890 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTR140P10T

IXTR140P10T

MOSFET P-CH 100V 110A ISOPLUS247

IXYS
3,814 -

RFQ

IXTR140P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 13mOhm @ 70A, 10V 4V @ 250µA 400 nC @ 10 V ±15V 31400 pF @ 25 V - 270W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH4N150

IXTH4N150

MOSFET N-CH 1500V 4A TO247

IXYS
3,839 -

RFQ

IXTH4N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 6Ohm @ 2A, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA02N250HV-TRL

IXTA02N250HV-TRL

MOSFET N-CH 2500V 200MA TO263HV

IXYS
2,426 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT50N60P3-TRL

IXFT50N60P3-TRL

MOSFET N-CH 600V 50A TO268

IXYS
2,623 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 145mOhm @ 25A, 10V 5V @ 4mA 94 nC @ 10 V ±30V 6300 pF @ 25 V - 1.04kW (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT52N50P2

IXFT52N50P2

MOSFET N-CH 500V 52A TO268

IXYS
2,278 -

RFQ

IXFT52N50P2

Ficha técnica

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 10V 120mOhm @ 26A, 10V 4.5V @ 4mA 113 nC @ 10 V ±30V 6800 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP36N55X2

IXFP36N55X2

IXFP36N55X2

IXYS
3,521 -

RFQ

Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
IXTQ130N20T

IXTQ130N20T

MOSFET N-CH 200V 130A TO3P

IXYS
2,769 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 130A (Tc) 10V 16mOhm @ 65A, 10V 5V @ 1mA 150 nC @ 10 V ±20V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH36P15P

IXTH36P15P

MOSFET P-CH 150V 36A TO247

IXYS
3,336 -

RFQ

IXTH36P15P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA30N65X2

IXTA30N65X2

IXTA30N65X2

IXYS
2,463 -

RFQ

Tube Ultra X2 Active - - - - - - - - - - - - - -
IXTQ34N65X2M

IXTQ34N65X2M

DISCRETE MOSFET 34A 650V X2 TO3P

IXYS
2,306 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ50N60X

IXFQ50N60X

MOSFET N-CH 600V 50A TO3P

IXYS
2,144 -

RFQ

IXFQ50N60X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 73mOhm @ 25A, 10V 4.5V @ 4mA 116 nC @ 10 V ±30V 4660 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK24N80P

IXFK24N80P

MOSFET N-CH 800V 24A TO264AA

IXYS
2,569 -

RFQ

IXFK24N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 400mOhm @ 12A, 10V 5V @ 4mA 105 nC @ 10 V ±30V 7200 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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