Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RSS125N03TB

RSS125N03TB

MOSFET N-CH 30V 12.5A 8SOP

Rohm Semiconductor
3,589 -

RFQ

RSS125N03TB

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4V, 10V 8.9mOhm @ 12.5A, 10V 2.5V @ 1mA 28 nC @ 5 V 20V 1670 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS140N03TB

RSS140N03TB

MOSFET N-CH 30V 14A 8SOP

Rohm Semiconductor
3,298 -

RFQ

RSS140N03TB

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4V, 10V 6.7mOhm @ 14A, 10V 2.5V @ 1mA 37 nC @ 5 V 20V 3150 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
2SK3050TL

2SK3050TL

MOSFET N-CH 600V 2A CPT3

Rohm Semiconductor
3,726 -

RFQ

2SK3050TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 5.5Ohm @ 1A, 10V 4V @ 1mA 25.6 nC @ 10 V ±30V 280 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RJU003N03T106

RJU003N03T106

MOSFET N-CH 30V 300MA UMT3

Rohm Semiconductor
3,487 -

RFQ

RJU003N03T106

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 300mA (Ta) 2.5V, 4.5V 1.1Ohm @ 300mA, 4.5V 1.5V @ 1mA - ±12V 24 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
RQ3E100BNTB

RQ3E100BNTB

MOSFET N-CH 30V 10A 8HSMT

Rohm Semiconductor
2,441 -

RFQ

RQ3E100BNTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 10.4mOhm @ 10A, 10V 2.5V @ 1mA 22 nC @ 10 V ±20V 1100 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
RTR030N05TL

RTR030N05TL

MOSFET N-CH 45V 3A TSMT3

Rohm Semiconductor
3,289 -

RFQ

RTR030N05TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 3A (Ta) 2.5V, 4.5V 67mOhm @ 3A, 4.5V 1.5V @ 1mA 6.2 nC @ 4.5 V ±12V 510 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
RS1E280BNTB

RS1E280BNTB

MOSFET N-CH 30V 28A 8HSOP

Rohm Semiconductor
3,454 -

RFQ

RS1E280BNTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta) 4.5V, 10V 2.3mOhm @ 28A, 10V 2.5V @ 1mA 94 nC @ 10 V ±20V 5100 pF @ 15 V - 3W (Ta), 30W (Tc) 150°C (TJ) Surface Mount
2SK3065T100

2SK3065T100

MOSFET N-CH 60V 2A MPT3

Rohm Semiconductor
3,405 -

RFQ

2SK3065T100

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 2.5V, 4V 320mOhm @ 1A, 4V 1.5V @ 1mA - ±20V 160 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
RQ6L020SPTCR

RQ6L020SPTCR

MOSFET P-CH 60V 2A TSMT6

Rohm Semiconductor
3,565 -

RFQ

RQ6L020SPTCR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4V, 10V 210mOhm @ 2A, 10V 3V @ 1mA 7.2 nC @ 5 V ±20V 750 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
RD3L140SPTL1

RD3L140SPTL1

MOSFET P-CH 60V 14A TO252

Rohm Semiconductor
3,190 -

RFQ

RD3L140SPTL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 14A (Ta) 4V, 10V 84mOhm @ 14A, 10V 3V @ 1mA 27 nC @ 10 V ±20V 1900 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
SCT3022ALGC11

SCT3022ALGC11

SICFET N-CH 650V 93A TO247N

Rohm Semiconductor
2,090 -

RFQ

SCT3022ALGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W (Tc) 175°C (TJ) Through Hole
RSH070P05TB1

RSH070P05TB1

MOSFET P-CH 45V 7A 8SOP

Rohm Semiconductor
2,475 -

RFQ

RSH070P05TB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 45 V 7A (Ta) 4V, 10V 27mOhm @ 7A, 10V 2.5V @ 1mA 47.6 nC @ 5 V ±20V 4100 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RD3P200SNTL1

RD3P200SNTL1

MOSFET N-CH 100V 20A TO252

Rohm Semiconductor
2,139 -

RFQ

RD3P200SNTL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 46mOhm @ 20A, 10V 2.5V @ 1mA 55 nC @ 10 V ±20V 2100 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
RD3G07BATTL1

RD3G07BATTL1

PCH -40V -70A POWER MOSFET - RD3

Rohm Semiconductor
1,740 -

RFQ

RD3G07BATTL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 70A (Ta) 4.5V, 10V 7.1mOhm @ 70A, 10V 2.5V @ 1mA 105 nC @ 10 V ±20V 5550 pF @ 20 V - 101W (Ta) 150°C (TJ) Surface Mount
RS1E220ATTB1

RS1E220ATTB1

MOSFET P-CH 30V 22A/76A 8HSOP

Rohm Semiconductor
2,478 -

RFQ

RS1E220ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 76A (Tc) 4.5V, 10V 4.1mOhm @ 22A, 10V 2.5V @ 2mA 130 nC @ 10 V ±20V 5850 pF @ 15 V - 3W (Ta) 150°C (TJ) Surface Mount
RS1G201ATTB1

RS1G201ATTB1

MOSFET P-CH 40V 20A/78A 8HSOP

Rohm Semiconductor
2,950 -

RFQ

RS1G201ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 78A (Tc) - 5.2mOhm @ 20A, 10V 2.5V @ 1mA 130 nC @ 10 V ±20V 6890 pF @ 20 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RS1L151ATTB1

RS1L151ATTB1

PCH -60V -56A, HSOP8, POWER MOSF

Rohm Semiconductor
3,743 -

RFQ

RS1L151ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 11.3mOhm @ 15A, 10V 2.5V @ 1mA 130 nC @ 10 V ±20V 6900 pF @ 30 V - 3W (Ta) 150°C (TJ) Surface Mount
RSJ250P10TL

RSJ250P10TL

MOSFET P-CH 100V 25A LPTS

Rohm Semiconductor
3,760 -

RFQ

RSJ250P10TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 4V, 10V 63mOhm @ 25A, 10V 2.5V @ 1mA 60 nC @ 5 V ±20V 8000 pF @ 25 V - 50W (Tc) 150°C (TJ) Surface Mount
RS1E260ATTB1

RS1E260ATTB1

MOSFET P-CH 30V 26A/80A 8HSOP

Rohm Semiconductor
3,343 -

RFQ

RS1E260ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 80A (Tc) 4.5V, 10V 3.1mOhm @ 26A, 10V 2.5V @ 1mA 175 nC @ 10 V ±20V 7850 pF @ 15 V - 3W (Ta) 150°C (TJ) Surface Mount
SCT3160KLHRC11

SCT3160KLHRC11

SICFET N-CH 1200V 17A TO247N

Rohm Semiconductor
3,119 -

RFQ

SCT3160KLHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 103W 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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