Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SCT3060ALGC11

SCT3060ALGC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor
3,689 -

RFQ

SCT3060ALGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W (Tc) 175°C (TJ) Through Hole
SCT3080ALHRC11

SCT3080ALHRC11

SICFET N-CH 650V 30A TO247N

Rohm Semiconductor
2,741 -

RFQ

SCT3080ALHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Through Hole
SCT2080KEHRC11

SCT2080KEHRC11

SICFET N-CH 1200V 40A TO247N

Rohm Semiconductor
2,638 -

RFQ

SCT2080KEHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - - 175°C (TJ) Through Hole
SCT3022ALHRC11

SCT3022ALHRC11

SICFET N-CH 650V 93A TO247N

Rohm Semiconductor
2,969 -

RFQ

SCT3022ALHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W 175°C (TJ) Through Hole
SCT3022KLHRC11

SCT3022KLHRC11

SICFET N-CH 1200V 95A TO247N

Rohm Semiconductor
2,931 -

RFQ

SCT3022KLHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178 nC @ 18 V +22V, -4V 2879 pF @ 800 V - 427W 175°C (TJ) Through Hole
2SK2095N

2SK2095N

MOSFET N-CH 60V 10A TO220FN

Rohm Semiconductor
3,612 -

RFQ

2SK2095N

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4V, 10V 95mOhm @ 5A, 10V 2.5V @ 1mA - ±20V 1600 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
2SK2299N

2SK2299N

MOSFET N-CH 450V 7A TO220FN

Rohm Semiconductor
3,597 -

RFQ

2SK2299N

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 7A (Ta) 10V 1.1Ohm @ 4A, 10V 4V @ 1mA - ±30V 870 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
2SK2713

2SK2713

MOSFET N-CH 450V 5A TO220FN

Rohm Semiconductor
3,147 -

RFQ

2SK2713

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 5A (Ta) 10V 1.4Ohm @ 2.5A, 10V 4V @ 1mA - ±30V 600 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
2SK2740

2SK2740

MOSFET N-CH 600V 7A TO220FN

Rohm Semiconductor
2,946 -

RFQ

2SK2740

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 1.2Ohm @ 4A, 10V 4V @ 1mA - ±30V 1050 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
RDN100N20

RDN100N20

MOSFET N-CH 200V 10A TO220FN

Rohm Semiconductor
3,287 -

RFQ

RDN100N20

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 10A (Ta) 10V 360mOhm @ 5A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 543 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
RDN120N25

RDN120N25

MOSFET N-CH 250V 12A TO220FN

Rohm Semiconductor
3,600 -

RFQ

RDN120N25

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 12A (Ta) 10V 210mOhm @ 6A, 10V 4V @ 1mA 62 nC @ 10 V ±30V 1224 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
2SK2503TL

2SK2503TL

MOSFET N-CH 60V 5A CPT3

Rohm Semiconductor
2,137 -

RFQ

2SK2503TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 135mOhm @ 2.5A, 10V 2.5V @ 1mA - ±20V 520 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
2SK2504TL

2SK2504TL

MOSFET N-CH 100V 5A CPT3

Rohm Semiconductor
3,887 -

RFQ

2SK2504TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5A (Ta) 4V, 10V 220mOhm @ 2.5A, 10V 2.5V @ 1mA - ±20V 520 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
2SK2715TL

2SK2715TL

MOSFET N-CH 500V 2A CPT3

Rohm Semiconductor
3,022 -

RFQ

2SK2715TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2A (Ta) 10V 4Ohm @ 1A, 10V 4V @ 1mA - ±30V 280 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RSS090N03FU6TB

RSS090N03FU6TB

MOSFET N-CH 30V 9A 8SOP

Rohm Semiconductor
3,450 -

RFQ

RSS090N03FU6TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4V, 10V 15mOhm @ 9A, 10V 2.5V @ 1mA 15 nC @ 5 V ±20V 810 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS090P03TB

RSS090P03TB

MOSFET P-CH 30V 9A 8SOP

Rohm Semiconductor
2,185 -

RFQ

RSS090P03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4V, 10V 14mOhm @ 9A, 10V 2.5V @ 1mA 39 nC @ 5 V ±20V 4000 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS100N03TB

RSS100N03TB

MOSFET N-CH 30V 10A 8SOP

Rohm Semiconductor
2,573 -

RFQ

RSS100N03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V 2.5V @ 1mA 14 nC @ 5 V 20V 1070 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS105N03TB

RSS105N03TB

MOSFET N-CH 30V 10.5A 8SOP

Rohm Semiconductor
2,309 -

RFQ

RSS105N03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta) 4V, 10V 11.7mOhm @ 10.5A, 10V 2.5V @ 1mA 15 nC @ 5 V 20V 1130 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS110N03TB

RSS110N03TB

MOSFET N-CH 30V 11A 8SOP

Rohm Semiconductor
3,829 -

RFQ

RSS110N03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 10.7mOhm @ 11A, 10V 2.5V @ 1mA 17 nC @ 5 V 20V 1300 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RSS120N03TB

RSS120N03TB

MOSFET N-CH 30V 12A 8SOP

Rohm Semiconductor
2,215 -

RFQ

RSS120N03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4V, 10V 10mOhm @ 12A, 10V 2.5V @ 1mA 25 nC @ 5 V 20V 1360 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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