Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSM180C12P3C202

BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

Rohm Semiconductor
3,318 -

RFQ

BSM180C12P3C202

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 180A (Tc) - - 5.6V @ 50mA - +22V, -4V 9000 pF @ 10 V - 880W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
BSM300C12P3E201

BSM300C12P3E201

SICFET N-CH 1200V 300A MODULE

Rohm Semiconductor
2,133 -

RFQ

BSM300C12P3E201

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 300A (Tc) - - 5.6V @ 80mA - +22V, -4V 15000 pF @ 10 V - 1360W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
RCX080N25

RCX080N25

MOSFET N-CH 250V 8A TO220FM

Rohm Semiconductor
495 -

RFQ

RCX080N25

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 600mOhm @ 4A, 10V 5V @ 1mA 15 nC @ 10 V ±30V 840 pF @ 25 V - 2.23W (Ta), 35W (Tc) 150°C (TJ) Through Hole
R6004ENX

R6004ENX

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor
122 -

RFQ

R6004ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6004KNX

R6004KNX

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor
341 -

RFQ

R6004KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 10.2 nC @ 10 V ±20V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6011KNX

R6011KNX

MOSFET N-CH 600V 11A TO220FM

Rohm Semiconductor
489 -

RFQ

R6011KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009KNX

R6009KNX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor
486 -

RFQ

R6009KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCH2080KEC

SCH2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor
3,087 -

RFQ

SCH2080KEC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 1850 pF @ 800 V - 262W (Tc) 175°C (TJ) Through Hole
SCT2160KEC

SCT2160KEC

SICFET N-CH 1200V 22A TO247

Rohm Semiconductor
2,349 -

RFQ

SCT2160KEC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCT2450KEC

SCT2450KEC

SICFET N-CH 1200V 10A TO247

Rohm Semiconductor
2,779 -

RFQ

SCT2450KEC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 18V 585mOhm @ 3A, 18V 4V @ 900µA 27 nC @ 18 V +22V, -6V 463 pF @ 800 V - 85W (Tc) 175°C (TJ) Through Hole
SCT2120AFC

SCT2120AFC

SICFET N-CH 650V 29A TO220AB

Rohm Semiconductor
2,846 -

RFQ

SCT2120AFC

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 18V 156mOhm @ 10A, 18V 4V @ 3.3mA 61 nC @ 18 V +22V, -6V 1200 pF @ 500 V - 165W (Tc) 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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