Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6020KNZ1C9

R6020KNZ1C9

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor
160 -

RFQ

R6020KNZ1C9

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020ENJTL

R6020ENJTL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor
258 -

RFQ

R6020ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
RCJ330N25TL

RCJ330N25TL

MOSFET N-CH 250V 33A LPTS

Rohm Semiconductor
1,000 -

RFQ

RCJ330N25TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 105mOhm @ 16.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4500 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
R8002ANX

R8002ANX

MOSFET N-CH 800V 2A TO220FM

Rohm Semiconductor
485 -

RFQ

R8002ANX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 12.7 nC @ 10 V ±30V 210 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
R6009ENJTL

R6009ENJTL

MOSFET N-CH 600V 9A LPTS

Rohm Semiconductor
740 -

RFQ

R6009ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
R6507ENJTL

R6507ENJTL

MOSFET N-CH 650V 7A LPTS

Rohm Semiconductor
998 -

RFQ

R6507ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 665mOhm @ 2.4A, 10V 4V @ 200µA 20 nC @ 10 V ±20V 390 pF @ 25 V - 78W (Tc) 150°C (TJ) Surface Mount
R6015ENJTL

R6015ENJTL

MOSFET N-CH 600V 15A LPTS

Rohm Semiconductor
925 -

RFQ

R6015ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
R6511ENJTL

R6511ENJTL

MOSFET N-CH 650V 11A LPTS

Rohm Semiconductor
2,418 -

RFQ

R6511ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
R6511KNJTL

R6511KNJTL

MOSFET N-CH 650V 11A LPTS

Rohm Semiconductor
3,919 -

RFQ

R6511KNJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 5V @ 320µA 22 nC @ 10 V ±20V 760 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
RD3S100AAFRATL

RD3S100AAFRATL

MOSFET N-CH 190V 10A TO252

Rohm Semiconductor
509 -

RFQ

RD3S100AAFRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 190 V 10A (Tc) 4V, 10V 182mOhm @ 5A, 10V 2.5V @ 1mA 52 nC @ 10 V ±20V 2000 pF @ 25 V - 85W (Tc) 150°C (TJ) Surface Mount
R6011END3TL1

R6011END3TL1

MOSFET N-CH 600V 11A TO252

Rohm Semiconductor
381 -

RFQ

R6011END3TL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
RX3L07BGNC16

RX3L07BGNC16

NCH 60V 70A, TO-220AB, POWER MOS

Rohm Semiconductor
380 -

RFQ

RX3L07BGNC16

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Ta) 4.5V, 10V 7.2mOhm @ 70A, 10V 2.5V @ 50µA 55 nC @ 10 V ±20V 2600 pF @ 30 V - 96W (Ta) 150°C (TJ) Through Hole
RCJ450N20TL

RCJ450N20TL

MOSFET N-CH 200V 45A LPTS

Rohm Semiconductor
2,151 -

RFQ

RCJ450N20TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
R8006KNXC7G

R8006KNXC7G

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor
890 -

RFQ

R8006KNXC7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 52W (Tc) 150°C (TJ) Through Hole
R6509KNJTL

R6509KNJTL

MOSFET N-CH 650V 9A LPTS

Rohm Semiconductor
3,229 -

RFQ

R6509KNJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 5V @ 230µA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 94W (Tc) 150°C (TJ) Surface Mount
R6509ENJTL

R6509ENJTL

MOSFET N-CH 650V 9A LPTS

Rohm Semiconductor
3,909 -

RFQ

R6509ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) Surface Mount
R6011ENJTL

R6011ENJTL

MOSFET N-CH 600V 11A LPTS

Rohm Semiconductor
440 -

RFQ

R6011ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
RJ1U330AAFRGTL

RJ1U330AAFRGTL

MOSFET N-CH 250V 33A LPTS

Rohm Semiconductor
371 -

RFQ

RJ1U330AAFRGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Ta) 10V 105mOhm @ 16.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4500 pF @ 25 V - 211W (Tc) 150°C (TJ) Surface Mount
R6018JNJGTL

R6018JNJGTL

MOSFET N-CH 600V 18A LPTS

Rohm Semiconductor
826 -

RFQ

R6018JNJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 15V 286mOhm @ 9A, 15V 7V @ 4.2mA 42 nC @ 15 V ±30V 1300 pF @ 100 V - 220W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6524KNX3C16

R6524KNX3C16

650V 24A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor
947 -

RFQ

R6524KNX3C16

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 253W (Tc) 150°C (TJ) Through Hole
Total 1151 Record«Prev123456789...58Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario