Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1

MOSFET N-CH 200V 11.3A 8TDSON

Infineon Technologies
3,465 -

RFQ

BSC12DN20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 11.3A (Tc) 10V 125mOhm @ 5.7A, 10V 4V @ 25µA 8.7 nC @ 10 V ±20V 680 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP135H6327XTSA1

BSP135H6327XTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
2,269 -

RFQ

BSP135H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7113DN-T1-GE3

SI7113DN-T1-GE3

MOSFET P-CH 100V 13.2A PPAK

Vishay Siliconix
2,948 -

RFQ

SI7113DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13.2A (Tc) 4.5V, 10V 134mOhm @ 4A, 10V 3V @ 250µA 55 nC @ 10 V ±20V 1480 pF @ 50 V - 3.7W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI4840BDY-T1-GE3

SI4840BDY-T1-GE3

MOSFET N-CH 40V 19A 8SO

Vishay Siliconix
3,931 -

RFQ

SI4840BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Tc) 4.5V, 10V 9mOhm @ 12.4A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2000 pF @ 20 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9310TRPBF

IRFR9310TRPBF

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
2,814 -

RFQ

IRFR9310TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7425TRPBF

IRF7425TRPBF

MOSFET P-CH 20V 15A 8SO

Infineon Technologies
2,277 -

RFQ

IRF7425TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V 1.2V @ 250µA 130 nC @ 4.5 V ±12V 7980 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISS26DN-T1-GE3

SISS26DN-T1-GE3

MOSFET N-CH 60V 60A PPAK1212-8S

Vishay Siliconix
2,944 -

RFQ

SISS26DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37 nC @ 10 V ±20V 1710 pF @ 30 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8453LZ

FDD8453LZ

MOSFET N-CH 40V 16.4A/50A DPAK

onsemi
3,888 -

RFQ

FDD8453LZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 16.4A (Ta), 50A (Tc) 4.5V, 10V 6.7mOhm @ 15A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 3515 pF @ 20 V - 3.1W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ084N08NS5ATMA1

BSZ084N08NS5ATMA1

MOSFET N-CH 80V 40A TSDSON

Infineon Technologies
2,610 -

RFQ

BSZ084N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 6V, 10V 8.4mOhm @ 20A, 10V 3.8V @ 31µA 25 nC @ 10 V ±20V 1820 pF @ 40 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7322DN-T1-GE3

SI7322DN-T1-GE3

MOSFET N-CH 100V 18A PPAK1212-8

Vishay Siliconix
3,383 -

RFQ

SI7322DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 58mOhm @ 5.5A, 10V 4.4V @ 250µA 20 nC @ 10 V ±20V 750 pF @ 50 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN1R2-25YLC,115

PSMN1R2-25YLC,115

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.
3,084 -

RFQ

PSMN1R2-25YLC,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 1.3mOhm @ 25A, 10V 1.95V @ 1mA 66 nC @ 10 V ±20V 4173 pF @ 12 V - 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R900P7ATMA1

IPD80R900P7ATMA1

MOSFET N-CH 800V 6A TO252-3

Infineon Technologies
3,272 -

RFQ

IPD80R900P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7440TRPBF

IRFH7440TRPBF

MOSFET N-CH 40V 85A 8PQFN

Infineon Technologies
3,109 -

RFQ

IRFH7440TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 6V, 10V 2.4mOhm @ 50A, 10V 3.9V @ 100µA 138 nC @ 10 V ±20V 4574 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7414DN-T1-E3

SI7414DN-T1-E3

MOSFET N-CH 60V 5.6A PPAK1212-8

Vishay Siliconix
1,968 -

RFQ

SI7414DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 5.6A (Ta) 4.5V, 10V 25mOhm @ 8.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7414DN-T1-GE3

SI7414DN-T1-GE3

MOSFET N-CH 60V 5.6A PPAK1212-8

Vishay Siliconix
3,729 -

RFQ

SI7414DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 5.6A (Ta) 4.5V, 10V 25mOhm @ 8.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7820DN-T1-GE3

SI7820DN-T1-GE3

MOSFET N-CH 200V 1.7A PPAK1212-8

Vishay Siliconix
3,319 -

RFQ

SI7820DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 1.7A (Ta) 6V, 10V 240mOhm @ 2.6A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISS32ADN-T1-GE3

SISS32ADN-T1-GE3

MOSFET N-CH 80V 17.4A/63A PPAK

Vishay Siliconix
3,406 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 17.4A (Ta), 63A (Tc) 7.5V, 10V 7.3mOhm @ 10A, 10V 3.6V @ 250µA 36 nC @ 10 V ±20V 1520 pF @ 40 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7834PBF

IRF7834PBF

MOSFET N-CH 30V 19A 8SO

Infineon Technologies
2,246 -

RFQ

IRF7834PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7842PBF

IRF7842PBF

MOSFET N-CH 40V 18A 8SO

Infineon Technologies
2,227 -

RFQ

IRF7842PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V 2.25V @ 250µA 50 nC @ 4.5 V ±20V 4500 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8113PBF

IRF8113PBF

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies
2,397 -

RFQ

IRF8113PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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