Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7149DP-T1-GE3

SI7149DP-T1-GE3

MOSFET P-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,553 -

RFQ

SI7149DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.2mOhm @ 15A, 10V 2.5V @ 250µA 147 nC @ 10 V ±25V 4590 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC026N04LSATMA1

BSC026N04LSATMA1

MOSFET N-CH 40V 23A/100A TDSON

Infineon Technologies
2,681 -

RFQ

BSC026N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 50A, 10V 2V @ 250µA 32 nC @ 10 V ±20V 2300 pF @ 20 V - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z34NSTRLPBF

IRF9Z34NSTRLPBF

MOSFET P-CH 55V 19A D2PAK

Infineon Technologies
3,744 -

RFQ

IRF9Z34NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH6002LPS-13

DMTH6002LPS-13

MOSFET N-CH 60V 100A PWRDI5060-8

Diodes Incorporated
2,677 -

RFQ

DMTH6002LPS-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 6V, 10V 2mOhm @ 50A, 10V 3V @ 250µA 130.8 nC @ 10 V ±20V 6555 pF @ 30 V - 167W -55°C ~ 175°C (TJ) Surface Mount
BSZ520N15NS3GATMA1

BSZ520N15NS3GATMA1

MOSFET N-CH 150V 21A 8TSDSON

Infineon Technologies
2,155 -

RFQ

BSZ520N15NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 52mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 890 pF @ 75 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7415DN-T1-E3

SI7415DN-T1-E3

MOSFET P-CH 60V 3.6A PPAK1212-8

Vishay Siliconix
2,745 -

RFQ

SI7415DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 3.6A (Ta) 4.5V, 10V 65mOhm @ 5.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7415DN-T1-GE3

SI7415DN-T1-GE3

MOSFET P-CH 60V 3.6A PPAK1212-8

Vishay Siliconix
3,260 -

RFQ

SI7415DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 3.6A (Ta) 4.5V, 10V 65mOhm @ 5.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS8842NZ

FDS8842NZ

MOSFET N-CH 40V 14.9A 8SOIC

onsemi
2,064 -

RFQ

FDS8842NZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 14.9A (Ta) 4.5V, 10V 7mOhm @ 14.9A, 10V 3V @ 250µA 73 nC @ 10 V ±20V 3845 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STD35P6LLF6

STD35P6LLF6

MOSFET P-CH 60V 35A DPAK

STMicroelectronics
2,538 -

RFQ

STD35P6LLF6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ F6 Active P-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 28mOhm @ 17.5A, 10V 2.5V @ 250µA 30 nC @ 4.5 V ±20V 3780 pF @ 25 V - 70W (Tc) 175°C (TJ) Surface Mount
STD17NF25

STD17NF25

MOSFET N-CH 250V 17A DPAK

STMicroelectronics
2,501 -

RFQ

STD17NF25

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ II Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Tc) 10V 165mOhm @ 8.5A, 10V 4V @ 250µA 29.5 nC @ 10 V ±20V 1000 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC86139P

FDMC86139P

MOSFET P-CH 100V 4.4A/15A 8MLP

onsemi
2,891 -

RFQ

FDMC86139P

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta), 15A (Tc) 6V, 10V 67mOhm @ 4.4A, 10V 4V @ 250µA 22 nC @ 10 V ±25V 1335 pF @ 50 V - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC86102LZ

FDMC86102LZ

MOSFET N-CH 100V 7A/18A 8MLP

onsemi
2,953 -

RFQ

FDMC86102LZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta), 18A (Tc) 4.5V, 10V 24mOhm @ 6.5A, 10V 2.2V @ 250µA 22 nC @ 10 V ±20V 1290 pF @ 50 V - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT3022ALGC11

SCT3022ALGC11

SICFET N-CH 650V 93A TO247N

Rohm Semiconductor
2,090 -

RFQ

SCT3022ALGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W (Tc) 175°C (TJ) Through Hole
IPN80R750P7ATMA1

IPN80R750P7ATMA1

MOSFET N-CH 800V 7A SOT223

Infineon Technologies
3,592 -

RFQ

IPN80R750P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 7.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7611DN-T1-GE3

SI7611DN-T1-GE3

MOSFET P-CH 40V 18A PPAK1212-8

Vishay Siliconix
3,690 -

RFQ

SI7611DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 18A (Tc) 4.5V, 10V 25mOhm @ 9.3A, 10V 3V @ 250µA 62 nC @ 10 V ±20V 1980 pF @ 20 V - 3.7W (Ta), 39W (Tc) -50°C ~ 150°C (TJ) Surface Mount
IRFR3704TRRPBF

IRFR3704TRRPBF

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
3,613 -

RFQ

IRFR3704TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3706PBF

IRFR3706PBF

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
2,181 -

RFQ

IRFR3706PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3707PBF

IRFR3707PBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
2,066 -

RFQ

IRFR3707PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3707ZPBF

IRFR3707ZPBF

MOSFET N-CH 30V 56A DPAK

Infineon Technologies
3,785 -

RFQ

IRFR3707ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3708TRRPBF

IRFR3708TRRPBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
2,727 -

RFQ

IRFR3708TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Record«Prev1... 275276277278279280281282...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario