Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7460PBF

IRF7460PBF

MOSFET N-CH 20V 12A 8SO

Infineon Technologies
2,238 -

RFQ

IRF7460PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 2050 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7463PBF

IRF7463PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,301 -

RFQ

IRF7463PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 2.7V, 10V 8mOhm @ 14A, 10V 2V @ 250µA 51 nC @ 4.5 V ±12V 3150 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7464PBF

IRF7464PBF

MOSFET N-CH 200V 1.2A 8SO

Infineon Technologies
3,793 -

RFQ

IRF7464PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1.2A (Ta) 10V 730mOhm @ 720mA, 10V 5.5V @ 250µA 14 nC @ 10 V ±30V 280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7465PBF

IRF7465PBF

MOSFET N-CH 150V 1.9A 8SO

Infineon Technologies
3,061 -

RFQ

IRF7465PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 1.9A (Ta) 10V 280mOhm @ 1.14A, 10V 5.5V @ 250µA 15 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7466PBF

IRF7466PBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
3,927 -

RFQ

IRF7466PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2100 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7468PBF

IRF7468PBF

MOSFET N-CH 40V 9.4A 8SO

Infineon Technologies
2,450 -

RFQ

IRF7468PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V 2V @ 250µA 34 nC @ 4.5 V ±12V 2460 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7469PBF

IRF7469PBF

MOSFET N-CH 40V 9A 8SO

Infineon Technologies
2,472 -

RFQ

IRF7469PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7470PBF

IRF7470PBF

MOSFET N-CH 40V 10A 8SO

Infineon Technologies
3,007 -

RFQ

IRF7470PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V 2V @ 250µA 44 nC @ 4.5 V ±12V 3430 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7471PBF

IRF7471PBF

MOSFET N-CH 40V 10A 8SO

Infineon Technologies
3,620 -

RFQ

IRF7471PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 4.5V, 10V 13mOhm @ 10A, 10V 3V @ 250µA 32 nC @ 4.5 V ±20V 2820 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7473PBF

IRF7473PBF

MOSFET N-CH 100V 6.9A 8SO

Infineon Technologies
3,078 -

RFQ

IRF7473PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta) 10V 26mOhm @ 4.1A, 10V 5.5V @ 250µA 61 nC @ 10 V ±20V 3180 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7477PBF

IRF7477PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,531 -

RFQ

IRF7477PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.5V @ 250µA 38 nC @ 4.5 V ±20V 2710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7478PBF

IRF7478PBF

MOSFET N-CH 60V 7A 8SO

Infineon Technologies
3,422 -

RFQ

IRF7478PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V 3V @ 250µA 31 nC @ 4.5 V ±20V 1740 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7493PBF

IRF7493PBF

MOSFET N-CH 80V 9.3A 8SO

Infineon Technologies
3,515 -

RFQ

IRF7493PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 15mOhm @ 5.6A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1510 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7805APBF

IRF7805APBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,309 -

RFQ

IRF7805APBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7805PBF

IRF7805PBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
4,000 -

RFQ

IRF7805PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7805ZPBF

IRF7805ZPBF

MOSFET N-CH 30V 16A 8SO

Infineon Technologies
2,073 -

RFQ

IRF7805ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.8mOhm @ 16A, 10V 2.25V @ 250µA 27 nC @ 4.5 V ±20V 2080 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807D1PBF

IRF7807D1PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,366 -

RFQ

IRF7807D1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807D2PBF

IRF7807D2PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,611 -

RFQ

IRF7807D2PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807PBF

IRF7807PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,957 -

RFQ

IRF7807PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Tc) - Surface Mount
IRF7807VD1PBF

IRF7807VD1PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,950 -

RFQ

IRF7807VD1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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