Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI3440DV-T1-GE3

SI3440DV-T1-GE3

MOSFET N-CH 150V 1.2A 6TSOP

Vishay Siliconix
2,857 -

RFQ

SI3440DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 1.2A (Ta) 6V, 10V 375mOhm @ 1.5A, 10V 4V @ 250µA 8 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ034N04LSATMA1

BSZ034N04LSATMA1

MOSFET N-CH 40V 19A/40A TSDSON

Infineon Technologies
2,432 -

RFQ

BSZ034N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 40A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V 2V @ 250µA 25 nC @ 10 V ±20V 1800 pF @ 20 V - 2.1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7853TRPBF

IRF7853TRPBF

MOSFET N-CH 100V 8.3A 8SO

Infineon Technologies
2,542 -

RFQ

IRF7853TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta) 10V 18mOhm @ 8.3A, 10V 4.9V @ 100µA 39 nC @ 10 V ±20V 1640 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM340N06CP ROG

TSM340N06CP ROG

MOSFET N-CHANNEL 60V 30A TO252

Taiwan Semiconductor Corporation
3,181 -

RFQ

TSM340N06CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1180 pF @ 30 V - 66W (Tc) 150°C (TJ) Surface Mount
FDMA8878

FDMA8878

MOSFET N-CH 30V 9A/10A 6MICROFET

onsemi
3,413 -

RFQ

FDMA8878

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 10A (Tc) 4.5V, 10V 16mOhm @ 9A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 720 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR6215TRPBF

IRFR6215TRPBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,439 -

RFQ

IRFR6215TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD18P06PGBTMA1

SPD18P06PGBTMA1

MOSFET P-CH 60V 18.6A TO252-3

Infineon Technologies
2,957 -

RFQ

SPD18P06PGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 18.6A (Tc) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 33 nC @ 10 V ±20V 860 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD86N3LH5

STD86N3LH5

MOSFET N-CH 30V 80A DPAK

STMicroelectronics
2,470 -

RFQ

STD86N3LH5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ V Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 5mOhm @ 40A, 10V 2.5V @ 250µA 14 nC @ 5 V ±20V 1850 pF @ 25 V - 70W (Tc) 175°C (TJ) Surface Mount
BSZ42DN25NS3GATMA1

BSZ42DN25NS3GATMA1

MOSFET N-CH 250V 5A TSDSON-8

Infineon Technologies
3,475 -

RFQ

BSZ42DN25NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 5A (Tc) 10V 425mOhm @ 2.5A, 10V 4V @ 13µA 5.5 nC @ 10 V ±20V 430 pF @ 100 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7227-100B,118

BUK7227-100B,118

MOSFET N-CH 100V 48A DPAK

Nexperia USA Inc.
3,968 -

RFQ

BUK7227-100B,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 27mOhm @ 25A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 2789 pF @ 25 V - 167W (Tc) -55°C ~ 185°C (TJ) Surface Mount
SI7454DDP-T1-GE3

SI7454DDP-T1-GE3

MOSFET N-CH 100V 21A PPAK SO-8

Vishay Siliconix
3,414 -

RFQ

SI7454DDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 3V @ 250µA 19.5 nC @ 10 V ±20V 550 pF @ 50 V - 4.1W (Ta), 29.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN1R4-30YLDX

PSMN1R4-30YLDX

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.
3,165 -

RFQ

PSMN1R4-30YLDX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.42mOhm @ 25A, 10V 2.2V @ 1mA 54.8 nC @ 10 V ±20V 3840 pF @ 15 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN7R0-60YS,115

PSMN7R0-60YS,115

MOSFET N-CH 60V 89A LFPAK56

Nexperia USA Inc.
3,585 -

RFQ

PSMN7R0-60YS,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 89A (Tc) 10V 6.4mOhm @ 15A, 10V 4V @ 1mA 45 nC @ 10 V ±20V 2712 pF @ 30 V - 117W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC066N06NSATMA1

BSC066N06NSATMA1

MOSFET N-CH 60V 64A TDSON-8-6

Infineon Technologies
2,429 -

RFQ

BSC066N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 64A (Tc) 6V, 10V 6.6mOhm @ 50A, 10V 3.3V @ 20µA 21 nC @ 10 V ±20V 1500 pF @ 30 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS5672

FDS5672

MOSFET N-CH 60V 12A 8SOIC

onsemi
3,388 -

RFQ

FDS5672

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 6V, 10V 10mOhm @ 12A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA20DP-T1-RE3

SIRA20DP-T1-RE3

MOSFET N-CH 25V 81.7A/100A PPAK

Vishay Siliconix
3,656 -

RFQ

SIRA20DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 81.7A (Ta), 100A (Tc) 4.5V, 10V 0.58mOhm @ 20A, 10V 2.1V @ 250µA 200 nC @ 10 V +16V, -12V 10850 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR2405TRPBF

IRFR2405TRPBF

MOSFET N-CH 55V 56A DPAK

Infineon Technologies
2,113 -

RFQ

IRFR2405TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 56A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC076N06NS3GATMA1

BSC076N06NS3GATMA1

MOSFET N-CH 60V 50A TDSON-8

Infineon Technologies
3,597 -

RFQ

BSC076N06NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 7.6mOhm @ 50A, 10V 4V @ 35µA 50 nC @ 10 V ±20V 4000 pF @ 30 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7457PBF

IRF7457PBF

MOSFET N-CH 20V 15A 8SO

Infineon Technologies
2,526 -

RFQ

IRF7457PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 3100 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7458PBF

IRF7458PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,963 -

RFQ

IRF7458PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 10V, 16V 8mOhm @ 14A, 16V 4V @ 250µA 59 nC @ 10 V ±30V 2410 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Record«Prev1... 269270271272273274275276...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario