Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU3418PBF

IRFU3418PBF

MOSFET N-CH 80V 70A IPAK

Infineon Technologies
2,923 -

RFQ

IRFU3418PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 14mOhm @ 18A, 10V 5.5V @ 250µA 94 nC @ 10 V ±20V 3510 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ48VPBF

IRFIZ48VPBF

MOSFET N-CH 60V 39A TO220AB FP

Infineon Technologies
2,691 -

RFQ

IRFIZ48VPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 39A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIB7N50LPBF

IRFIB7N50LPBF

MOSFET N-CH 500V 6.8A TO220-3

Vishay Siliconix
2,684 -

RFQ

IRFIB7N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.8A (Tc) 10V 380mOhm @ 4.1A, 10V 5V @ 250µA 92 nC @ 10 V ±30V 2220 pF @ 25 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3710ZLPBF

IRF3710ZLPBF

MOSFET N-CH 100V 59A TO262

Infineon Technologies
3,346 -

RFQ

IRF3710ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710ZSPBF

IRF3710ZSPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
2,679 -

RFQ

IRF3710ZSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3412PBF

IRFR3412PBF

MOSFET N-CH 100V 48A DPAK

Infineon Technologies
3,357 -

RFQ

IRFR3412PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 25mOhm @ 29A, 10V 5.5V @ 250µA 89 nC @ 10 V ±20V 3430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1503PBF

IRF1503PBF

MOSFET N-CH 30V 75A TO220AB

Infineon Technologies
2,748 -

RFQ

IRF1503PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIB5N50LPBF

IRFIB5N50LPBF

MOSFET N-CH 500V 4.7A TO220-3

Vishay Siliconix
3,668 -

RFQ

IRFIB5N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.7A (Tc) 10V 800mOhm @ 2.4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1000 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3713PBF

IRL3713PBF

MOSFET N-CH 30V 260A TO220AB

Infineon Technologies
2,098 -

RFQ

IRL3713PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2204LPBF

IRF2204LPBF

MOSFET N-CH 40V 170A TO262

Infineon Technologies
3,485 -

RFQ

IRF2204LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1503LPBF

IRF1503LPBF

MOSFET N-CH 30V 75A TO262

Infineon Technologies
3,130 -

RFQ

IRF1503LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4710PBF

IRFSL4710PBF

MOSFET N-CH 100V 75A TO262

Infineon Technologies
3,194 -

RFQ

IRFSL4710PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3716LPBF

IRL3716LPBF

MOSFET N-CH 20V 180A TO262

Infineon Technologies
2,581 -

RFQ

IRL3716LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF8010SPBF

IRF8010SPBF

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies
3,323 -

RFQ

IRF8010SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3830 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2805LPBF

IRF2805LPBF

MOSFET N-CH 55V 135A TO262

Infineon Technologies
2,872 -

RFQ

IRF2805LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1503SPBF

IRF1503SPBF

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies
2,391 -

RFQ

IRF1503SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3808LPBF

IRF3808LPBF

MOSFET N-CH 75V 106A TO262

Infineon Technologies
3,339 -

RFQ

IRF3808LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIB41N15DPBF

IRFIB41N15DPBF

MOSFET N-CH 150V 41A TO220AB FP

Infineon Technologies
3,520 -

RFQ

IRFIB41N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±20V 2520 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1312PBF

IRF1312PBF

MOSFET N-CH 80V 95A TO220AB

Infineon Technologies
3,586 -

RFQ

IRF1312PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 10V 10mOhm @ 57A, 10V 5.5V @ 250µA 140 nC @ 10 V ±20V 5450 pF @ 25 V - 3.8W (Ta), 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP254NPBF

IRFP254NPBF

MOSFET N-CH 250V 23A TO247-3

Vishay Siliconix
3,369 -

RFQ

IRFP254NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 23A (Tc) 10V 125mOhm @ 14A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2040 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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