Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP25NM50N

STP25NM50N

MOSFET N-CH 500V 22A TO220AB

STMicroelectronics
2,128 -

RFQ

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2565 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW25NM50N

STW25NM50N

MOSFET N-CH 500V 22A TO247-3

STMicroelectronics
2,079 -

RFQ

STW25NM50N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2565 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD22NM20NT4

STD22NM20NT4

MOSFET N-CH 200V 22A DPAK

STMicroelectronics
2,011 -

RFQ

STD22NM20NT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 200 V 22A (Tc) 10V 105mOhm @ 11A, 10V 5V @ 250µA 50 nC @ 10 V ±20V 800 pF @ 25 V - 100W (Tc) -65°C ~ 150°C (TJ) Surface Mount
STL20NM20N

STL20NM20N

MOSFET N-CH 200V 20A POWERFLAT

STMicroelectronics
3,817 -

RFQ

STL20NM20N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 105mOhm @ 10A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 800 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1902PBF

IRF1902PBF

MOSFET N-CH 20V 4.2A 8SO

Infineon Technologies
3,052 -

RFQ

IRF1902PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.7V, 4.5V 85mOhm @ 4A, 4.5V 700mV @ 250µA 7.5 nC @ 4.5 V ±12V 310 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU7807ZPBF

IRLU7807ZPBF

MOSFET N-CH 30V 43A I-PAK

Infineon Technologies
3,811 -

RFQ

IRLU7807ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3707ZPBF

IRFU3707ZPBF

MOSFET N-CH 30V 56A IPAK

Infineon Technologies
3,898 -

RFQ

IRFU3707ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7475PBF

IRF7475PBF

MOSFET N-CH 12V 11A 8SO

Infineon Technologies
2,058 -

RFQ

IRF7475PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 11A (Ta) 2.8V, 4.5V 15mOhm @ 8.8A, 4.5V 2V @ 250µA 19 nC @ 4.5 V ±12V 1590 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU3715ZPBF

IRLU3715ZPBF

MOSFET N-CH 20V 49A I-PAK

Infineon Technologies
2,596 -

RFQ

IRLU3715ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 49A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 810 pF @ 10 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3704ZPBF

IRFU3704ZPBF

MOSFET N-CH 20V 60A IPAK

Infineon Technologies
2,806 -

RFQ

IRFU3704ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3105PBF

IRLR3105PBF

MOSFET N-CH 55V 25A DPAK

Infineon Technologies
2,241 -

RFQ

IRLR3105PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) 5V, 10V 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±16V 710 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3709ZPBF

IRFU3709ZPBF

MOSFET N-CH 30V 86A IPAK

Infineon Technologies
2,786 -

RFQ

IRFU3709ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2330 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7828PBF

IRF7828PBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
3,210 -

RFQ

IRF7828PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V 12.5mOhm @ 10A, 4.5V 1V @ 250µA 14 nC @ 5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR7811WPBF

IRLR7811WPBF

MOSFET N-CH 30V 64A DPAK

Infineon Technologies
3,690 -

RFQ

IRLR7811WPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 10.5mOhm @ 15A, 10V 2.5V @ 250µA 31 nC @ 4.5 V ±12V 2260 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZCLPBF

IRL3715ZCLPBF

MOSFET N-CH 20V 50A TO262

Infineon Technologies
2,821 -

RFQ

IRL3715ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704ZLPBF

IRF3704ZLPBF

MOSFET N-CH 20V 67A TO262

Infineon Technologies
3,035 -

RFQ

IRF3704ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704ZPBF

IRF3704ZPBF

MOSFET N-CH 20V 67A TO220AB

Infineon Technologies
2,712 -

RFQ

IRF3704ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704ZSPBF

IRF3704ZSPBF

MOSFET N-CH 20V 67A D2PAK

Infineon Technologies
2,454 -

RFQ

IRF3704ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3802PBF

IRLU3802PBF

MOSFET N-CH 12V 84A I-PAK

Infineon Technologies
2,135 -

RFQ

IRLU3802PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7488PBF

IRF7488PBF

MOSFET N-CH 80V 6.3A 8SO

Infineon Technologies
3,314 -

RFQ

IRF7488PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) - Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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