Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQ3419EV-T1_GE3

SQ3419EV-T1_GE3

MOSFET P-CH 40V 6.9A 6TSOP

Vishay Siliconix
3,507 -

RFQ

SQ3419EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.9A (Tc) 4.5V, 10V 58mOhm @ 2.5A, 10V 2.5V @ 250µA 11.3 nC @ 4.5 V ±20V 990 pF @ 20 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AO4480

AO4480

MOSFET N-CH 40V 14A 8SOIC

Alpha & Omega Semiconductor Inc.
2,996 -

RFQ

AO4480

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 4.5V, 10V 11.5mOhm @ 14A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1920 pF @ 20 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

MOSFET P-CH 30V 50A PPAK1212-8

Vishay Siliconix
3,865 -

RFQ

SIS427EDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10.6mOhm @ 11A, 10V 2.5V @ 250µA 66 nC @ 10 V ±25V 1930 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQT7N10LTF

FQT7N10LTF

MOSFET N-CH 100V 1.7A SOT223-4

onsemi
2,802 -

RFQ

FQT7N10LTF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.7A (Tc) 5V, 10V 350mOhm @ 850mA, 10V 2V @ 250µA 6 nC @ 5 V ±20V 290 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP88H6327XTSA1

BSP88H6327XTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
2,415 -

RFQ

BSP88H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 2.8V, 10V 6Ohm @ 350mA, 10V 1.4V @ 108µA 6.8 nC @ 10 V ±20V 95 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2323DS-T1-E3

SI2323DS-T1-E3

MOSFET P-CH 20V 3.7A SOT23-3

Vishay Siliconix
3,669 -

RFQ

SI2323DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.8V, 4.5V 39mOhm @ 4.7A, 4.5V 1V @ 250µA 19 nC @ 4.5 V ±8V 1020 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN6013LFG-7

DMN6013LFG-7

MOSFET N-CH 60V 10.3A PWRDI3333

Diodes Incorporated
3,099 -

RFQ

DMN6013LFG-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 10.3A (Ta), 45A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V 3V @ 250µA 55.4 nC @ 10 V ±20V 2577 pF @ 30 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2319DS-T1-E3

SI2319DS-T1-E3

MOSFET P-CH 40V 2.3A SOT23-3

Vishay Siliconix
2,489 -

RFQ

SI2319DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 2.3A (Ta) 4.5V, 10V 82mOhm @ 3A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 470 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4435DDY-T1-GE3

SI4435DDY-T1-GE3

MOSFET P-CH 30V 11.4A 8SO

Vishay Siliconix
3,148 -

RFQ

SI4435DDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 11.4A (Tc) 4.5V, 10V 24mOhm @ 9.1A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 1350 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7615ADN-T1-GE3

SI7615ADN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

Vishay Siliconix
2,272 -

RFQ

SI7615ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 10V 4.4mOhm @ 20A, 10V 1.5V @ 250µA 183 nC @ 10 V ±12V 5590 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPZ40N04S5L7R4ATMA1

IPZ40N04S5L7R4ATMA1

MOSFET N-CH 40V 40A 8TSDSON

Infineon Technologies
3,917 -

RFQ

IPZ40N04S5L7R4ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 7.4mOhm @ 20A, 10V 2V @ 10µA 17 nC @ 10 V ±16V 920 pF @ 25 V - 34W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZXM62P02E6TA

ZXM62P02E6TA

MOSFET P-CH 20V 2.3A SOT23-6

Diodes Incorporated
2,768 -

RFQ

ZXM62P02E6TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 2.7V, 4.5V 200mOhm @ 1.6A, 4.5V 700mV @ 250µA (Min) 5.8 nC @ 4.5 V ±12V 320 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD70R1K4P7SAUMA1

IPD70R1K4P7SAUMA1

MOSFET N-CH 700V 4A TO252-3

Infineon Technologies
2,089 -

RFQ

IPD70R1K4P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 23W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ZXMP10A17E6TA

ZXMP10A17E6TA

MOSFET P-CH 100V 1.3A SOT26

Diodes Incorporated
2,140 -

RFQ

ZXMP10A17E6TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 6V, 10V 350mOhm @ 1.4A, 10V 4V @ 250µA 6.1 nC @ 5 V ±20V 424 pF @ 50 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R1K5CEAUMA1

IPD60R1K5CEAUMA1

MOSFET N-CH 650V 5A TO252

Infineon Technologies
2,434 -

RFQ

IPD60R1K5CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 49W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NTD3055L104T4G

NTD3055L104T4G

MOSFET N-CH 60V 12A DPAK

onsemi
3,748 -

RFQ

NTD3055L104T4G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 5V 104mOhm @ 6A, 5V 2V @ 250µA 20 nC @ 5 V ±15V 440 pF @ 25 V - 1.5W (Ta), 48W (Tj) -55°C ~ 175°C (TJ) Surface Mount
SQ3426EV-T1_GE3

SQ3426EV-T1_GE3

MOSFET N-CHANNEL 60V 7A 6TSOP

Vishay Siliconix
33,000 -

RFQ

SQ3426EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 720 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZVP4525GTA

ZVP4525GTA

MOSFET P-CH 250V 265MA SOT223

Diodes Incorporated
3,440 -

RFQ

ZVP4525GTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 250 V 265mA (Ta) 3.5V, 10V 14Ohm @ 200mA, 10V 2V @ 1mA 3.45 nC @ 10 V ±40V 73 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4143DY-T1-GE3

SI4143DY-T1-GE3

MOSFET P-CHANNEL 30V 25.3A 8SO

Vishay Siliconix
3,955 -

RFQ

SI4143DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 25.3A (Tc) 4.5V, 10V 6.2mOhm @ 12A, 10V 2.5V @ 250µA 167 nC @ 10 V ±25V 6630 pF @ 15 V - 6W (Tc) -55°C ~ 150°C (TA) Surface Mount
RS1E280BNTB

RS1E280BNTB

MOSFET N-CH 30V 28A 8HSOP

Rohm Semiconductor
3,454 -

RFQ

RS1E280BNTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta) 4.5V, 10V 2.3mOhm @ 28A, 10V 2.5V @ 1mA 94 nC @ 10 V ±20V 5100 pF @ 15 V - 3W (Ta), 30W (Tc) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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