Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2805SPBF

IRF2805SPBF

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies
2,085 -

RFQ

IRF2805SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3808SPBF

IRF3808SPBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies
2,321 -

RFQ

IRF3808SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP450NPBF

IRFP450NPBF

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix
3,347 -

RFQ

IRFP450NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 370mOhm @ 8.4A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB16N60LPBF

IRFB16N60LPBF

MOSFET N-CH 600V 16A TO220AB

Vishay Siliconix
3,772 -

RFQ

IRFB16N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 460mOhm @ 9A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 2720 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP264NPBF

IRFP264NPBF

MOSFET N-CH 250V 44A TO247-3

Vishay Siliconix
2,821 -

RFQ

IRFP264NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 3860 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP15N60LPBF

IRFP15N60LPBF

MOSFET N-CH 600V 15A TO247-3

Vishay Siliconix
2,790 -

RFQ

IRFP15N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 460mOhm @ 9A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 2720 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP22N60C3PBF

IRFP22N60C3PBF

MOSFET N-CH 650V 22A TO247-3

Vishay Siliconix
3,484 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) - - - - - - - - - Through Hole
IRFPS35N50LPBF

IRFPS35N50LPBF

MOSFET N-CH 500V 34A SUPER247

Vishay Siliconix
3,053 -

RFQ

IRFPS35N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 145mOhm @ 20A, 10V 5V @ 250µA 230 nC @ 10 V ±30V 5580 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS30N60KPBF

IRFPS30N60KPBF

MOSFET N-CH 600V 30A SUPER247

Vishay Siliconix
2,812 -

RFQ

IRFPS30N60KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 250µA 220 nC @ 10 V ±30V 5870 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS29N60LPBF

IRFPS29N60LPBF

MOSFET N-CH 600V 29A SUPER247

Vishay Siliconix
2,900 -

RFQ

IRFPS29N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 250µA 220 nC @ 10 V ±30V 6160 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3065T100

2SK3065T100

MOSFET N-CH 60V 2A MPT3

Rohm Semiconductor
3,405 -

RFQ

2SK3065T100

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 2.5V, 4V 320mOhm @ 1A, 4V 1.5V @ 1mA - ±20V 160 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
BUK9Y29-40E,115

BUK9Y29-40E,115

MOSFET N-CH 40V 25A LFPAK56

Nexperia USA Inc.
2,666 -

RFQ

BUK9Y29-40E,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Tc) 5V 25mOhm @ 5A, 10V 2.1V @ 1mA 5 nC @ 5 V ±10V 664 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMP6023LE-13

DMP6023LE-13

MOSFET P-CH 60V 7A/18.2A SOT223

Diodes Incorporated
3,112 -

RFQ

DMP6023LE-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 18.2A (Tc) 4.5V, 10V 28mOhm @ 5A, 10V 3V @ 250µA 53.1 nC @ 10 V ±20V 2569 pF @ 30 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ130N03LSGATMA1

BSZ130N03LSGATMA1

MOSFET N-CH 30V 10A/35A 8TSDSON

Infineon Technologies
3,565 -

RFQ

BSZ130N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 35A (Tc) 4.5V, 10V 13mOhm @ 20A, 10V 2.2V @ 250µA 13 nC @ 10 V ±20V 970 pF @ 15 V - 2.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8880

FDD8880

MOSFET N-CH 30V 13A/58A TO252AA

onsemi
2,485 -

RFQ

FDD8880

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMP4015SSS-13

DMP4015SSS-13

MOSFET P-CH 40V 9.1A 8SO

Diodes Incorporated
3,734 -

RFQ

DMP4015SSS-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 9.1A (Ta) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 47.5 nC @ 5 V ±25V 4234 pF @ 20 V - 1.45W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA510PZ

FDMA510PZ

MOSFET P-CH 20V 7.8A 6MICROFET

onsemi
5,811 -

RFQ

FDMA510PZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 7.8A (Ta) 1.5V, 4.5V 30mOhm @ 7.8A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±8V 1480 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IAUZ30N06S5L140ATMA1

IAUZ30N06S5L140ATMA1

MOSFET N-CH 60V 30A TSDSON-8-32

Infineon Technologies
3,212 -

RFQ

IAUZ30N06S5L140ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tj) - 14mOhm @ 15A, 10V 2.2V @ 10µA 12.2 nC @ 10 V ±16V 888 pF @ 30 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZXMN10A08GTA

ZXMN10A08GTA

MOSFET N-CH 100V 2A SOT223

Diodes Incorporated
2,860 -

RFQ

ZXMN10A08GTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Ta) 6V, 10V 250mOhm @ 3.2A, 10V 2V @ 250µA 7.7 nC @ 10 V ±20V 405 pF @ 50 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7619DN-T1-GE3

SI7619DN-T1-GE3

MOSFET P-CH 30V 24A PPAK1212-8

Vishay Siliconix
2,662 -

RFQ

SI7619DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 21mOhm @ 10.5A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 1350 pF @ 15 V - 3.5W (Ta), 27.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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