Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB3507PBF

IRFB3507PBF

MOSFET N-CH 75V 97A TO220AB

Infineon Technologies
3,741 -

RFQ

IRFB3507PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410

IRFB4410

MOSFET N-CH 100V 96A TO220AB

Infineon Technologies
2,482 -

RFQ

IRFB4410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4610

IRFB4610

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies
3,191 -

RFQ

IRFB4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3307

IRFS3307

MOSFET N-CH 75V 130A D2PAK

Infineon Technologies
2,507 -

RFQ

IRFS3307

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410

IRFS4410

MOSFET N-CH 100V 96A D2PAK

Infineon Technologies
2,962 -

RFQ

IRFS4410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610

IRFS4610

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies
3,291 -

RFQ

IRFS4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610PBF

IRFS4610PBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies
3,568 -

RFQ

IRFS4610PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3207

IRFSL3207

MOSFET N-CH 75V 180A TO262

Infineon Technologies
3,968 -

RFQ

IRFSL3207

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3307

IRFSL3307

MOSFET N-CH 75V 130A TO262

Infineon Technologies
3,137 -

RFQ

IRFSL3307

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3507

IRFSL3507

MOSFET N-CH 75V 97A TO262

Infineon Technologies
3,779 -

RFQ

IRFSL3507

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4410

IRFSL4410

MOSFET N-CH 100V 96A TO262

Infineon Technologies
3,484 -

RFQ

IRFSL4410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4610

IRFSL4610

MOSFET N-CH 100V 73A TO262

Infineon Technologies
2,083 -

RFQ

IRFSL4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4610PBF

IRFSL4610PBF

MOSFET N-CH 100V 73A TO262

Infineon Technologies
3,964 -

RFQ

IRFSL4610PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZS-7P

IRF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,570 -

RFQ

IRF1405ZS-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3805

IRF3805

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,956 -

RFQ

IRF3805

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3805S

IRF3805S

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
3,073 -

RFQ

IRF3805S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1010Z

IRFR1010Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,495 -

RFQ

IRFR1010Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2307Z

IRFR2307Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,259 -

RFQ

IRFR2307Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2607Z

IRFR2607Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,807 -

RFQ

IRFR2607Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3507

IRFS3507

MOSFET N-CH 75V 97A D2PAK

Infineon Technologies
3,260 -

RFQ

IRFS3507

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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