Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF22N30

FQPF22N30

MOSFET N-CH 300V 12A TO220F

Fairchild Semiconductor
1,572 -

RFQ

FQPF22N30

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 300 V 12A (Tc) 10V 160mOhm @ 6A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2200 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF17N40T

FQPF17N40T

MOSFET N-CH 400V 9.5A TO220F

Fairchild Semiconductor
642 -

RFQ

FQPF17N40T

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 9.5A (Tc) 10V 270mOhm @ 4.75A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644B-FP001

IRF644B-FP001

IRF644B - DISCRETE MOSFET

Fairchild Semiconductor
980 -

RFQ

IRF644B-FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 7A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1600 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF1404ZSTRLCT

AUIRF1404ZSTRLCT

AUTOMOTIVE HEXFET N-CHANNEL POWE

International Rectifier
548 -

RFQ

AUIRF1404ZSTRLCT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI65R190C6XKSA1

IPI65R190C6XKSA1

IPI65R190C6 - 650V-700V COOLMOS

Infineon Technologies
517 -

RFQ

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI3306GPBF

IRFI3306GPBF

IRFI3306G - 60V SINGLE N-CHANNEL

International Rectifier
800 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 10V 4.2mOhm @ 43A, 10V 4V @ 1.037mA 135 nC @ 10 V ±20V 4685 pF @ 50 V - 46W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF1405ZS-7TRL

AUIRF1405ZS-7TRL

MOSFET N-CH 55V 120A D2PAK

International Rectifier
239 -

RFQ

AUIRF1405ZS-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB100N04S2-04

IPB100N04S2-04

IPB100N04 - 20V-40V N-CHANNEL AU

Infineon Technologies
499 -

RFQ

IPB100N04S2-04

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.3mOhm @ 80A, 10V 4V @ 250µA 172 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
P3M171K0K3

P3M171K0K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor
3,654 -

RFQ

P3M171K0K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 68W -55°C ~ 175°C (TJ) Through Hole
HUF75631S3ST

HUF75631S3ST

MOSFET N-CH 100V 33A D2PAK

Fairchild Semiconductor
321 -

RFQ

HUF75631S3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 40mOhm @ 33A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK5012DPP-MG#T2

RJK5012DPP-MG#T2

RJK5012DPP - N CHANNEL MOSFET

Renesas
478 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 620mOhm @ 6A, 10V 4.5V @ 1mA 29 nC @ 10 V ±30V 1100 pF @ 25 V - 30W (Tc) 150°C Through Hole
SPW16N50C3

SPW16N50C3

SPW16N50 - 500V COOLMOS N-CHANNE

Infineon Technologies
270 -

RFQ

SPW16N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3575-AZ

2SK3575-AZ

2SK3575 - SWITCHING N-CHANNEL PO

Renesas
824 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 83A (Tc) 4.5V, 10V 4.5mOhm @ 42A, 10V 2.5V @ 1mA 70 nC @ 10 V ±20V 3700 pF @ 10 V - 1.5W (Ta), 105W (Tc) 150°C Through Hole
IPB011N04LGATMA1

IPB011N04LGATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,592 -

RFQ

IPB011N04LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.1mOhm @ 100A, 10V 2V @ 200µA 346 nC @ 10 V ±20V 29000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL7472L1TRPBF

IRL7472L1TRPBF

IRL7472L1 - 12V-300V N-CHANNEL P

International Rectifier
165 -

RFQ

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 375A (Tc) 4.5V, 10V 0.59mOhm @ 195A, 10V 2.5V @ 250µA 330 nC @ 4.5 V ±20V 20082 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK4065-DL-1E

2SK4065-DL-1E

N-CHANNEL POWER MOSFET, 75V, 100

onsemi
688 -

RFQ

2SK4065-DL-1E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Ta) 4V, 10V 6mOhm @ 50A, 10V - 220 nC @ 10 V ±20V 12200 pF @ 20 V - 1.65W (Ta), 90W (Tc) 150°C (TJ) Surface Mount
AUIRF1324STRL7P

AUIRF1324STRL7P

MOSFET N-CH 24V 340A D2PAK

International Rectifier
601 -

RFQ

AUIRF1324STRL7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 340A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8409

AUIRFS8409

AUIRFS8409 - 20V-40V N-CHANNEL A

Infineon Technologies
286 -

RFQ

AUIRFS8409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA21N50C3XKSA1

SPA21N50C3XKSA1

HIGH POWER_LEGACY

Infineon Technologies
747 -

RFQ

SPA21N50C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA9N90-F109

FQA9N90-F109

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
398 -

RFQ

FQA9N90-F109

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 8.6A (Tc) 10V 1.3Ohm @ 4.3A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2700 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
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15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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