Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFP1405

AUIRFP1405

AUIRFP1405 - 55V-60V N-CHANNEL A

Infineon Technologies
800 -

RFQ

AUIRFP1405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3435-Z-AZ

2SK3435-Z-AZ

2SK3435-Z-AZ - SWITCHING N-CHANN

Renesas
475 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 14mOhm @ 40A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C Surface Mount
3N164 TO-72 4L

3N164 TO-72 4L

P-CHANNEL, SINGLE ENHANCEMENT MO

Linear Integrated Systems, Inc.
2,730 -

RFQ

3N164 TO-72 4L

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 50mA 20V 300Ohm @ 100µA, 20V 5V @ 10µA - -6.5V 3500 pF @ 15 V - 375mW - Through Hole
AUIRF1324STRL

AUIRF1324STRL

AUIRF1324 - 20V-40V N-CHANNEL AU

Infineon Technologies
466 -

RFQ

AUIRF1324STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5053TRPBF

IRFH5053TRPBF

MOSFET N-CH 100V 9.3A/46A PQFN

Infineon Technologies
205 -

RFQ

IRFH5053TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 46A (Tc) 10V 18mOhm @ 9.3A, 10V 4.9V @ 100µA 36 nC @ 10 V ±20V 1510 pF @ 50 V - 3.1W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6643TRPBF

IRF6643TRPBF

MOSFET N-CH 150V 6.2A DIRECTFET

Infineon Technologies
14,762 -

RFQ

IRF6643TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 6.2A (Ta), 35A (Tc) 10V 34.5mOhm @ 7.6A, 10V 4.9V @ 150µA 55 nC @ 10 V ±20V 2340 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
2SK3431-AZ

2SK3431-AZ

2SK3431-AZ - SWITCHING N-CHANNEL

Renesas
554 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 83A (Tc) 4V, 10V 5.6mOhm @ 42A, 10V 2.5V @ 1mA 110 nC @ 10 V ±20V 6100 pF @ 10 V - 1.5W (Ta), 100W (Tc) 150°C Through Hole
IPA60R120C7

IPA60R120C7

IPA60R120 - 11A, 600V, 0.12OHM

Rochester Electronics, LLC
270 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - -
AUIRFS3206TRL

AUIRFS3206TRL

AUIRFS3206 - 55V-60V N-CHANNEL A

Infineon Technologies
139 -

RFQ

AUIRFS3206TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R125C7

IPA65R125C7

IPA65R125 - 650V AND 700V COOLMO

Infineon Technologies
412 -

RFQ

IPA65R125C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R125C7

IPP65R125C7

IPP65R125 - 650V AND 700V COOLMO

Infineon Technologies
143 -

RFQ

IPP65R125C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS4115-7TRL

AUIRFS4115-7TRL

MOSFET_(120V,300V)

Infineon Technologies
662 -

RFQ

AUIRFS4115-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1449

2SK1449

2SK1449 - N-CHANNEL SILICON MOSF

onsemi
900 -

RFQ

2SK1449

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFP4004

AUIRFP4004

MOSFET N-CH 40V 195A TO247AC

International Rectifier
303 -

RFQ

AUIRFP4004

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3455B-S17-AY

2SK3455B-S17-AY

2SK3455B - SWITCHING N-CHANNEL P

Renesas
1,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 600mOhm @ 6A, 10V 3.5V @ 1mA 30 nC @ 10 V ±30V 1800 pF @ 10 V - 2W (Ta), 50W (Tc) 150°C Through Hole
AUIRF1404STRL

AUIRF1404STRL

MOSFET_(20V,40V)

Infineon Technologies
800 -

RFQ

AUIRF1404STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2498-AZ

2SK2498-AZ

2SK2498 - SWITCHING N-CHANNEL PO

Renesas
414 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 4V, 10V 9mOhm @ 25A, 10V 2V @ 1mA 152 nC @ 10 V ±20V 3400 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C Through Hole
2N6787

2N6787

POWER FIELD-EFFECT TRANSISTOR, N

International Rectifier
943 -

RFQ

2N6787

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPA20N65C3XK

SPA20N65C3XK

SPA20N65 - 650V AND 700V COOLMOS

Infineon Technologies
165 -

RFQ

SPA20N65C3XK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH190N65F-F085

FCH190N65F-F085

MOSFET N-CH 650V 20.6A TO247-3

Fairchild Semiconductor
294 -

RFQ

FCH190N65F-F085

Ficha técnica

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 27A, 10V 5V @ 250µA 82 nC @ 10 V ±20V 3181 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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