Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
EMB1426QMME/NOPB

EMB1426QMME/NOPB

EMB1426 - HALF BRIDGE BASED MOSF

Texas Instruments
500 -

RFQ

EMB1426QMME/NOPB

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK3354-AZ

2SK3354-AZ

2SK3354-AZ - SWITCHING N-CHANNEL

Renesas
946 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 83A (Tc) 4V, 10V 8mOhm @ 42A, 10V 2.5V @ 1mA 106 nC @ 10 V ±20V 6300 pF @ 10 V - 1.5W (Ta), 100W (Tc) 150°C Through Hole
2SK3357-A

2SK3357-A

2SK3357 - N-CHANNEL POWER MOSFET

Renesas
294 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Ta) 4V, 10V 5.8mOhm @ 38A, 10V 2.5V @ 1mA 170 nC @ 10 V ±20V 9800 pF @ 10 V - 3W (Ta), 150W (Tc) 150°C Through Hole
IAUA250N04S6N007AUMA1

IAUA250N04S6N007AUMA1

MOSFET_(20V 40V) PG-HSOF-5

Infineon Technologies
2,769 -

RFQ

IAUA250N04S6N007AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 435A (Tj) 7V, 10V 0.7mOhm @ 100A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 9898 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
P3M06120K3

P3M06120K3

SICFET N-CH 650V 27A TO-247-3

PN Junction Semiconductor
3,935 -

RFQ

P3M06120K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 27A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA - +20V, -8V - - 131W -55°C ~ 175°C (TJ) Through Hole
P3M06120K4

P3M06120K4

SICFET N-CH 650V 27A TO-247-4

PN Junction Semiconductor
2,662 -

RFQ

P3M06120K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 27A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA - +20V, -8V - - 131W -55°C ~ 175°C (TJ) Through Hole
IPZ65R095C7

IPZ65R095C7

IPZ65R095 - 650V AND 700V COOLMO

Infineon Technologies
410 -

RFQ

IPZ65R095C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2N6847

2N6847

POWER FIELD-EFFECT TRANSISTOR, P

International Rectifier
186 -

RFQ

2N6847

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFP2907

AUIRFP2907

AUIRFP2907 - 75V-100V N-CHANNEL

Infineon Technologies
450 -

RFQ

AUIRFP2907

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP039N08B-F102

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor
399 -

RFQ

FDP039N08B-F102

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB11N60C3ATMA1

SPB11N60C3ATMA1

MOSFET N-CH 650V 11A TO263-3

Infineon Technologies
2,029 -

RFQ

SPB11N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P3M06060T3

P3M06060T3

SICFET N-CH 650V 46A TO220-3

PN Junction Semiconductor
2,150 -

RFQ

P3M06060T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 46A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 170W -55°C ~ 175°C (TJ) Through Hole
P3M06060K3

P3M06060K3

SICFET N-CH 650V 48A TO247-3

PN Junction Semiconductor
2,150 -

RFQ

P3M06060K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 48A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Through Hole
P3M06060K4

P3M06060K4

SICFET N-CH 650V 48A TO247-4

PN Junction Semiconductor
3,790 -

RFQ

P3M06060K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 48A 15V 79mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Through Hole
NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY - SWITCHINGN

Renesas
1,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 2.4mOhm @ 55A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 14250 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C Surface Mount
2SK2887TL

2SK2887TL

MOSFET N-CH 200V 3A CPT3

Rohm Semiconductor
3,267 -

RFQ

2SK2887TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 900mOhm @ 1.5A, 10V 4V @ 1mA 8.5 nC @ 10 V ±30V 230 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RK3055ETL

RK3055ETL

MOSFET N-CH 60V 8A CPT3

Rohm Semiconductor
2,692 -

RFQ

RK3055ETL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 10V 150mOhm @ 4A, 10V 2.5V @ 1mA - ±20V 520 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RK7002AT116

RK7002AT116

MOSFET N-CH 60V 300MA SST3

Rohm Semiconductor
3,657 -

RFQ

RK7002AT116

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4V, 10V 1Ohm @ 300mA, 10V 2.5V @ 1mA 6 nC @ 10 V ±20V 33 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
RSS075P03TB

RSS075P03TB

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor
2,209 -

RFQ

RSS075P03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V 2.5V @ 1mA 30 nC @ 5 V ±20V 2900 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
IRFB3507

IRFB3507

MOSFET N-CH 75V 97A TO220AB

Infineon Technologies
2,073 -

RFQ

IRFB3507

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 97A (Tc) 10V 8.8mOhm @ 58A, 10V 4V @ 100µA 130 nC @ 10 V ±20V 3540 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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