Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3707ZSTRL

IRF3707ZSTRL

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,538 -

RFQ

IRF3707ZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707ZSTRR

IRF3707ZSTRR

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,428 -

RFQ

IRF3707ZSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709ZCSTRL

IRF3709ZCSTRL

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies
2,528 -

RFQ

IRF3709ZCSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709ZCSTRR

IRF3709ZCSTRR

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies
3,357 -

RFQ

IRF3709ZCSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3711ZCSTRL

IRF3711ZCSTRL

MOSFET N-CH 20V 92A D2PAK

Infineon Technologies
3,199 -

RFQ

IRF3711ZCSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3711ZCSTRR

IRF3711ZCSTRR

MOSFET N-CH 20V 92A D2PAK

Infineon Technologies
3,927 -

RFQ

IRF3711ZCSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3711ZSTRL

IRF3711ZSTRL

MOSFET N-CH 20V 92A D2PAK

Infineon Technologies
2,035 -

RFQ

IRF3711ZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK1430

2SK1430

2SK1430 - 10A, 100V, 0.16OHM, N-

Sanyo
717 -

RFQ

2SK1430

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF2N80YDTU

FQPF2N80YDTU

MOSFET N-CH 800V 1.5A TO220F-3

Fairchild Semiconductor
725 -

RFQ

FQPF2N80YDTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 1.5A (Tc) 10V 6.3Ohm @ 750mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB90N06S4L04ATMA2

IPB90N06S4L04ATMA2

MOSFET N-CH 60V 90A TO263-3

Infineon Technologies
2,509 -

RFQ

IPB90N06S4L04ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2706GR-E1-A

UPA2706GR-E1-A

UPA2706GR-E1-A - MOS FIELD EFFEC

Renesas
10,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 20A (Tc) 4V, 10V 15mOhm @ 5.5A, 10V 2.5V @ 1mA 7.1 nC @ 5 V ±20V 660 pF @ 10 V - 3W (Ta), 15W (Tc) 150°C Surface Mount
AUIRLU3114Z

AUIRLU3114Z

AUIRLU3114Z - 20V-40V N-CHANNEL

Infineon Technologies
3,631 -

RFQ

AUIRLU3114Z

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDI9409-F085

FDI9409-F085

FDI9409 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
1,600 -

RFQ

FDI9409-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2980 pF @ 25 V - 94W (Tj) -55°C ~ 175°C (TJ) Through Hole
IPA65R420CFD

IPA65R420CFD

IPA65R420 - 650V AND 700V COOLMO

Infineon Technologies
975 -

RFQ

IPA65R420CFD

Ficha técnica

Bulk CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 31.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCI7N60

FCI7N60

MOSFET N-CH 600V 7A I2PAK

Fairchild Semiconductor
398 -

RFQ

FCI7N60

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 920 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2706GR-E1-AT

UPA2706GR-E1-AT

UPA2706GR-E1-AT - MOS FIELD EFFE

Renesas
7,500 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 20A (Tc) 4V, 10V 15mOhm @ 5.5A, 10V 2.5V @ 1mA 7.1 nC @ 5 V ±20V 660 pF @ 10 V - 3W (Ta), 15W (Tc) 150°C Surface Mount
BSB028N06NN3GXUMA1

BSB028N06NN3GXUMA1

MOSFET N-CH 60V 22A/90A 2WDSON

Infineon Technologies
2,731 -

RFQ

BSB028N06NN3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 90A (Tc) 10V 2.8mOhm @ 30A, 10V 4V @ 102µA 143 nC @ 10 V ±20V 12000 pF @ 30 V - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFF223

IRFF223

3.0A, 150V, 1.2 OHM, N-CHANNEL P

International Rectifier
422 -

RFQ

IRFF223

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC040N10NS5ATMA1

BSC040N10NS5ATMA1

MOSFET N-CH 100V 100A TDSON

Infineon Technologies
2,696 -

RFQ

BSC040N10NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4mOhm @ 50A, 10V 3.8V @ 95µA 72 nC @ 10 V ±20V 5300 pF @ 50 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK2632LS-CB11

2SK2632LS-CB11

2SK2632 - 2.5A, 800V, 4.8OHM, N-

onsemi
300 -

RFQ

2SK2632LS-CB11

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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