Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCPF2250N80Z

FCPF2250N80Z

MOSFET N-CH 800V 2.6A TO220F

Fairchild Semiconductor
1,334 -

RFQ

FCPF2250N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 21.9W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF1300N80ZYD

FCPF1300N80ZYD

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
497 -

RFQ

FCPF1300N80ZYD

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
IQE008N03LM5CGATMA1

IQE008N03LM5CGATMA1

TRENCH <= 40V PG-TTFN-9

Infineon Technologies
747 -

RFQ

IQE008N03LM5CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 253A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V 2V @ 250µA 64 nC @ 10 V ±16V 5700 pF @ 15 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
IQE008N03LM5ATMA1

IQE008N03LM5ATMA1

TRENCH <= 40V PG-TSON-8

Infineon Technologies
464 -

RFQ

IQE008N03LM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 253A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V 2V @ 250µA 64 nC @ 10 V ±16V 5700 pF @ 15 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC005N03LS5IATMA1

BSC005N03LS5IATMA1

TRENCH <= 40V

Infineon Technologies
2,616 -

RFQ

BSC005N03LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Ta), 433A (Tc) 4.5V, 10V 0.55mOhm @ 50A, 10V 2V @ 10mA 128 nC @ 10 V ±20V 8000 pF @ 15 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF7N60YDTU

FCPF7N60YDTU

MOSFET N-CH 600V 7A TO220F-3

Fairchild Semiconductor
3,952 -

RFQ

FCPF7N60YDTU

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 920 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
BXL4004-1E

BXL4004-1E

BXL4004 - N-CHANNEL POWER MOSFET

onsemi
500 -

RFQ

BXL4004-1E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 3.9mOhm @ 50A, 10V - 140 nC @ 10 V ±20V 8200 pF @ 20 V - 75W (Tc) 150°C Through Hole
FDB8870

FDB8870

MOSFET N-CH 30V 23A/160A TO263AB

Fairchild Semiconductor
800 -

RFQ

FDB8870

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS52N15DTRLP

IRFS52N15DTRLP

MOSFET N-CH 150V 51A D2PAK

Infineon Technologies
250 -

RFQ

IRFS52N15DTRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN070-200P,127

PSMN070-200P,127

NEXPERIA PSMN070-200P - 35A, 200

NXP Semiconductors
8,812 -

RFQ

PSMN070-200P,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 70mOhm @ 17A, 10V 4V @ 1mA 77 nC @ 10 V ±20V 4570 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3315S

AUIRF3315S

AUIRF3315 - 120V-300V N-CHANNEL

Infineon Technologies
4,720 -

RFQ

AUIRF3315S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3415LS

2SK3415LS

2SK3415LS - MOSFET 40A, 60V, 0.

Sanyo
3,378 -

RFQ

2SK3415LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC070N10NS5SCATMA1

BSC070N10NS5SCATMA1

MOSFET N-CH 100V 14A/82A 8SWSON

Infineon Technologies
3,562 -

RFQ

BSC070N10NS5SCATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 82A (Tc) 6V, 10V 7mOhm @ 40A, 10V 3.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 50 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3415LS

2SK3415LS

2SK3415LS - MOSFET 40A, 60V, 0.

onsemi
2,000 -

RFQ

2SK3415LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTP6413ANG

NTP6413ANG

POWER MOSFET 100V 42A, SINGLE N-

onsemi
1,085 -

RFQ

NTP6413ANG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 28mOhm @ 42A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD85N02R-001

NTD85N02R-001

MOSFET N-CH 24V 12A/85A IPAK

onsemi
37,921 -

RFQ

NTD85N02R-001

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2V @ 250µA 17.7 nC @ 5 V ±20V 2050 pF @ 20 V - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTP30N06

NTP30N06

MOSFET N-CH 60V 27A TO220AB

onsemi
2,362 -

RFQ

NTP30N06

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 27A (Ta) 10V 42mOhm @ 15A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTY100N10E

MTY100N10E

MOSFET N-CH 100V 100A TO264

onsemi
2,746 -

RFQ

MTY100N10E

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 250µA 378 nC @ 10 V ±20V 10640 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP3055V

MTP3055V

MOSFET N-CH 60V 12A TO220AB

onsemi
2,643 -

RFQ

MTP3055V

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 150mOhm @ 6A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 500 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTP4302

NTP4302

MOSFET N-CH 30V 74A TO220AB

onsemi
7,867 -

RFQ

NTP4302

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 74A (Tc) 4.5V, 10V 9.3mOhm @ 37A, 10V 3V @ 250µA 28 nC @ 4.5 V ±20V 2400 pF @ 24 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Record«Prev1... 198199200201202203204205...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario