Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTP13N10

NTP13N10

MOSFET N-CH 100V 13A TO220AB

onsemi
2,667 -

RFQ

NTP13N10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta) 10V 165mOhm @ 6.5A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 550 pF @ 25 V - 64.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD3055L104-001

NTD3055L104-001

MOSFET N-CH 60V 12A IPAK

onsemi
2,472 -

RFQ

NTD3055L104-001

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) - 104mOhm @ 6A, 5V 2V @ 250µA 20 nC @ 5 V - 440 pF @ 25 V - - - Through Hole
NTP30N06L

NTP30N06L

MOSFET N-CH 60V 30A TO220AB

onsemi
2,355 -

RFQ

NTP30N06L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 5V 46mOhm @ 15A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 1150 pF @ 25 V - 88.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD60N03-001

NTD60N03-001

MOSFET N-CH 28V 60A IPAK

onsemi
29,240 -

RFQ

NTD60N03-001

Ficha técnica

Bulk,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 28 V 60A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 3V @ 250µA 30 nC @ 4.5 V ±20V 2150 pF @ 24 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z34NLPBF

IRF9Z34NLPBF

PLANAR 40<-<100V

Infineon Technologies
335 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1447LS

2SK1447LS

2SK1447 - N-CHANNEL SILICON MOSF

Sanyo
7,333 -

RFQ

2SK1447LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK6E3R2-55C,127

BUK6E3R2-55C,127

NEXPERIA BUK6E3R2-55C - 120A, 55

NXP Semiconductors
4,973 -

RFQ

BUK6E3R2-55C,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI4N80TU

FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

Fairchild Semiconductor
2,146 -

RFQ

FQI4N80TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R380P6

IPA60R380P6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
313 -

RFQ

IPA60R380P6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP32N055SDE-E1-AZ

NP32N055SDE-E1-AZ

NP32N055SDE-E1-AZ - MOS FIELD EF

Renesas
10,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 4.5V, 10V 24mOhm @ 16A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2000 pF @ 25 V - 1.2W (Ta), 66W (Tc) 175°C Surface Mount
FDB9409-F085

FDB9409-F085

MOSFET N-CH 40V 80A D2PAK

Fairchild Semiconductor
5,478 -

RFQ

FDB9409-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2980 pF @ 25 V - 94W (Tj) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4931NT1G-IRH1

NTMFS4931NT1G-IRH1

NTMFS4931 - MOSFET N CHANNEL SIN

onsemi
5,197 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 1.1mOhm @ 30A, 10V 2.2V @ 250µA 128 nC @ 10 V ±20V 9821 pF @ 15 V - 950mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR2405TRL

AUIRFR2405TRL

AUIRFR2405 - MOSFET N-CHANNEL SI

International Rectifier
3,000 -

RFQ

AUIRFR2405TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) - 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V - 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP12N50

FDP12N50

MOSFET N-CH 500V 11.5A TO220-3

Fairchild Semiconductor
1,304 -

RFQ

FDP12N50

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1315 pF @ 25 V - 165W (Tc) -55°C ~ 150°C (TJ) Through Hole
GC20N65F

GC20N65F

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor
2,197 -

RFQ

GC20N65F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7480MTRPBF

IRF7480MTRPBF

MOSFET N-CH 40V 217A DIRECTFET

Infineon Technologies
2,128 -

RFQ

IRF7480MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 217A (Tc) 6V, 10V 1.2mOhm @ 132A, 10V 3.9V @ 150µA 185 nC @ 10 V ±20V 6680 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS7437TRL7PP

IRFS7437TRL7PP

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
551 -

RFQ

IRFS7437TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GC20N65T

GC20N65T

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor
100 -

RFQ

GC20N65T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF19N20

FQPF19N20

MOSFET N-CH 200V 11.8A TO220F

Fairchild Semiconductor
10,000 -

RFQ

FQPF19N20

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF1300N80ZYD

FCPF1300N80ZYD

MOSFET N-CH 800V 4A TO220F-3

Fairchild Semiconductor
1,550 -

RFQ

FCPF1300N80ZYD

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Record«Prev1... 197198199200201202203204...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario