Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010EZ

IRF1010EZ

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies
2,176 -

RFQ

IRF1010EZ

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010Z

IRF1010Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,587 -

RFQ

IRF1010Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-2042

64-2042

MOSFET N-CH 40V 75A TO262

Infineon Technologies
3,404 -

RFQ

64-2042

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4104

IRF4104

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
2,262 -

RFQ

IRF4104

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540Z

IRF540Z

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies
3,095 -

RFQ

IRF540Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIB8N50K

IRFIB8N50K

MOSFET N-CH 500V 6.7A TO220-3

Vishay Siliconix
2,692 -

RFQ

IRFIB8N50K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.7A (Tc) 10V 350mOhm @ 4A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLIB4343

IRLIB4343

MOSFET N-CH 55V 19A TO220AB FP

Infineon Technologies
2,172 -

RFQ

IRLIB4343

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 39W (Tc) -40°C ~ 175°C (TJ) Through Hole
AUIRFN7107TR

AUIRFN7107TR

AUIRFN7107 - 75V-100V N-CHANNEL

Infineon Technologies
8,000 -

RFQ

AUIRFN7107TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 14A (Ta), 75A (Tc) 10V 8.5mOhm @ 45A, 10V 4V @ 100µA 77 nC @ 10 V ±20V 3001 pF @ 25 V - 4.4W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7572S

FDMC7572S

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
2,608 -

RFQ

FDMC7572S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V 3V @ 1mA 44 nC @ 10 V ±20V 2705 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK661R8-30C,118

BUK661R8-30C,118

MOSFET N-CH 30V 120A D2PAK

NXP USA Inc.
1,473 -

RFQ

BUK661R8-30C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.9mOhm @ 25A, 10V 2.8V @ 1mA 168 nC @ 10 V ±16V 10918 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB22N03S4L-15

IPB22N03S4L-15

IPB22N03 - 20V-40V N-CHANNEL AUT

Infineon Technologies
1,373 -

RFQ

IPB22N03S4L-15

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.9mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP070AN06A0

FDP070AN06A0

MOSFET N-CH 60V 15A/80A TO220-3

Fairchild Semiconductor
1,261 -

RFQ

FDP070AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 3000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF260N65FL1

FCPF260N65FL1

MOSFET N-CH 650V 15A TO220F

Fairchild Semiconductor
3,523 -

RFQ

FCPF260N65FL1

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 260mOhm @ 7.5A, 10V 5V @ 1.5mA 60 nC @ 10 V ±20V 2340 pF @ 100 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS38N20DTRLP

IRFS38N20DTRLP

MOSFET N-CH 200V 43A D2PAK

Infineon Technologies
3,631 -

RFQ

IRFS38N20DTRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF6N80T

FQPF6N80T

MOSFET N-CH 800V 3.3A TO220F

Fairchild Semiconductor
5,111 -

RFQ

FQPF6N80T

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.3A (Tc) 10V 1.95Ohm @ 1.65A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRL3705ZL

AUIRL3705ZL

MOSFET N-CH 55V 75A TO262

International Rectifier
9,271 -

RFQ

AUIRL3705ZL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF8N90C

FQPF8N90C

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
5,346 -

RFQ

FQPF8N90C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPDD60R190G7XTMA1

IPDD60R190G7XTMA1

MOSFET N-CH 600V 13A HDSOP-10

Infineon Technologies
169 -

RFQ

IPDD60R190G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 190mOhm @ 4.2A, 10V 4V @ 210µA 18 nC @ 10 V ±20V 718 pF @ 400 V - 76W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS8403

AUIRFS8403

MOSFET N-CH 40V 123A D2PAK

International Rectifier
7,413 -

RFQ

AUIRFS8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8403

AUIRFS8403

AUIRFS8403 - 20V-40V N-CHANNEL A

Infineon Technologies
6,000 -

RFQ

AUIRFS8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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