Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTMSD6N303R2

NTMSD6N303R2

MOSFET N-CH 30V 6A 8SOIC

onsemi
26,450 -

RFQ

NTMSD6N303R2

Ficha técnica

Tape & Reel (TR),Bulk FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 32mOhm @ 6A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 950 pF @ 24 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS4510TRLPBF

IRFS4510TRLPBF

MOSFET N-CH 100V 61A D2PAK

Infineon Technologies
3,749 -

RFQ

IRFS4510TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 61A (Tc) 10V 13.9mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9605-30A,118

BUK9605-30A,118

NEXPERIA BUK9605-30A - POWER FIE

Nexperia USA Inc.
8,107 -

RFQ

BUK9605-30A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 4.6mOhm @ 25A, 10V 2V @ 1mA - ±10V 8600 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP16AN08A0

FDP16AN08A0

MOSFET N-CH 75V 9A/58A TO220-3

Fairchild Semiconductor
3,500 -

RFQ

FDP16AN08A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 58A (Tc) 6V, 10V 16mOhm @ 58A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1857 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7606-55A,118

BUK7606-55A,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
800 -

RFQ

BUK7606-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.3mOhm @ 25A, 10V 4V @ 1mA - ±20V 6000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF654B

IRF654B

IRF654B - 21A, 250V, 0.14OHM, N-

Fairchild Semiconductor
447 -

RFQ

IRF654B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK6E2R3-40C,127

BUK6E2R3-40C,127

NEXPERIA BUK6E2R3-40C - 120A, 40

NXP Semiconductors
2,001 -

RFQ

BUK6E2R3-40C,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 25A, 10V 2.8V @ 1mA 260 nC @ 10 V ±16V 15100 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R310CFDXKSA1700

IPI65R310CFDXKSA1700

IPI65R310 - 650V AND 700V COOLMO

Infineon Technologies
1,500 -

RFQ

IPI65R310CFDXKSA1700

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18503KCS

CSD18503KCS

CSD18503KCS 40V, N CHANNEL NEXFE

National Semiconductor
740 -

RFQ

CSD18503KCS

Ficha técnica

Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 2.3V @ 250µA 36 nC @ 10 V ±20V 3150 pF @ 20 V - 188W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI80N04S4-03

IPI80N04S4-03

IPI80N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
350 -

RFQ

IPI80N04S4-03

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB008NE2LXXUMA1

BSB008NE2LXXUMA1

MOSFET N-CH 25V 46A/180A 2WDSON

Infineon Technologies
123 -

RFQ

BSB008NE2LXXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 46A (Ta), 180A (Tc) 4.5V, 10V 0.8mOhm @ 30A, 10V 2V @ 250µA 343 nC @ 10 V ±20V 16000 pF @ 12 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFSL8403

AUIRFSL8403

MOSFET N-CH 40V 123A TO262

International Rectifier
3,030 -

RFQ

AUIRFSL8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3705ZPBF

IRLU3705ZPBF

MOSFET N-CH 55V 42A IPAK

International Rectifier
1,275 -

RFQ

IRLU3705ZPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76132P3

HUF76132P3

75A, 30V, 0.016OHM, N-CHANNEL MO

Fairchild Semiconductor
800 -

RFQ

HUF76132P3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQB7N60TM-WS

FQB7N60TM-WS

FQB7N60 - MOSFET N-CHANNEL SINGL

Fairchild Semiconductor
800 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 1Ohm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1430 pF @ 25 V - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC010N04LSATMA1

BSC010N04LSATMA1

MOSFET N-CH 40V 38A/100A TDSON

Infineon Technologies
2,675 -

RFQ

BSC010N04LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 2V @ 250µA 95 nC @ 10 V ±20V 6800 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2807ZSTRLPBF

IRF2807ZSTRLPBF

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies
233 -

RFQ

IRF2807ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK5030DPD-03#J2

RJK5030DPD-03#J2

RJK5030DPD - N CHANNEL MOSFET

Renesas
6,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.6Ohm @ 2A, 10V 4.5V @ 1mA - ±30V 550 pF @ 25 V - 41.7W (Tc) 150°C Surface Mount
FQP4N80

FQP4N80

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
5,225 -

RFQ

FQP4N80

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ44VZS

AUIRFZ44VZS

MOSFET N-CH 60V 57A D2PAK

International Rectifier
4,055 -

RFQ

AUIRFZ44VZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Record«Prev1... 194195196197198199200201...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario