Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7Y25-80E/GFX

BUK7Y25-80E/GFX

MOSFET N-CH 80V 39A LFPAK56

NXP USA Inc.
2,198 -

RFQ

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 39A (Tc) 10V 25mOhm @ 10A, 10V 4V @ 1mA 25.9 nC @ 10 V ±20V 1800 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CA/JCOP/MF4K/4B-UZ

CA/JCOP/MF4K/4B-UZ

CA/JCOP/MF4K/4B-UZ

NXP USA Inc.
3,765 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
NX2020N2X

NX2020N2X

NX2020N2X

NXP USA Inc.
2,230 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
NX2020P1X

NX2020P1X

NX2020P1X

NXP USA Inc.
3,854 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
NX7002AK.R

NX7002AK.R

NX7002AK.R

NXP USA Inc.
2,582 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
PMZB290UN/FYL

PMZB290UN/FYL

PMZB290UN/FYL

NXP USA Inc.
3,347 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
PSMN0R9-25YLC/GFX

PSMN0R9-25YLC/GFX

PSMN0R9-25YLC/GFX

NXP USA Inc.
2,990 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
IXFN230N10

IXFN230N10

MOSFET N-CH 100V 230A SOT-227B

IXYS
3,914 -

RFQ

IXFN230N10

Ficha técnica

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 230A (Tc) 10V 6mOhm @ 500mA, 10V 4V @ 8mA 570 nC @ 10 V ±20V 19000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT60M75L2FLLG

APT60M75L2FLLG

MOSFET N-CH 600V 73A 264 MAX

Microchip Technology
3,632 -

RFQ

APT60M75L2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 75mOhm @ 36.5A, 10V 5V @ 5mA 195 nC @ 10 V ±30V 8930 pF @ 25 V - 893W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60M75L2LLG

APT60M75L2LLG

MOSFET N-CH 600V 73A 264 MAX

Microchip Technology
2,418 -

RFQ

APT60M75L2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 75mOhm @ 36.5A, 10V 5V @ 5mA 195 nC @ 10 V ±30V 8930 pF @ 25 V - 893W (Tc) -55°C ~ 150°C (TJ) Through Hole
STE70NM60

STE70NM60

MOSFET N-CH 600V 70A ISOTOP

STMicroelectronics
3,197 -

RFQ

STE70NM60

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 55mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7300 pF @ 25 V - 600W (Tc) 150°C (TJ) Chassis Mount
MMIX1F44N100Q3

MMIX1F44N100Q3

MOSFET N-CH 1000V 30A 24SMPD

IXYS
2,729 -

RFQ

MMIX1F44N100Q3

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 245mOhm @ 22A, 10V 6.5V @ 8mA 264 nC @ 10 V ±30V 13600 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTN5N250

IXTN5N250

MOSFET N-CH 2500V 5A SOT227B

IXYS
2,052 -

RFQ

IXTN5N250

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 5A (Tc) 10V 8.8Ohm @ 2.5A, 10V 5V @ 1mA 200 nC @ 10 V ±30V 8560 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APTM100SK33T1G

APTM100SK33T1G

MOSFET N-CH 1000V 23A SP1

Microchip Technology
2,076 -

RFQ

APTM100SK33T1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 390W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
IXTT12N150HV

IXTT12N150HV

MOSFET N-CH 1500V 12A TO268

IXYS
2,223 -

RFQ

IXTT12N150HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 12A (Tc) 10V - 4.5V @ 250µA 106 nC @ 10 V ±30V 3720 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT32F120J

APT32F120J

MOSFET N-CH 1200V 33A ISOTOP

Microchip Technology
2,888 -

RFQ

APT32F120J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 33A (Tc) 10V 320mOhm @ 25A, 10V 5V @ 2.5mA 560 nC @ 10 V ±30V 18200 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1F40N110P

MMIX1F40N110P

MOSFET N-CH 1100V 24A 24SMPD

IXYS
3,769 -

RFQ

MMIX1F40N110P

Ficha técnica

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 1100 V 24A (Tc) 10V 290mOhm @ 20A, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTB30N100L

IXTB30N100L

MOSFET N-CH 1000V 30A PLUS264

IXYS
2,182 -

RFQ

IXTB30N100L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 500mA, 20V 5V @ 250µA 545 nC @ 20 V ±30V 13200 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTF2N300P3

IXTF2N300P3

MOSFET N-CH 3000V 1.6A I4PAC

IXYS
3,601 -

RFQ

IXTF2N300P3

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 1.6A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
APL502B2G

APL502B2G

MOSFET N-CH 500V 58A T-MAX

Microchip Technology
3,459 -

RFQ

APL502B2G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 15V 90mOhm @ 29A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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