Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPDD60R105CFD7XTMA1

IPDD60R105CFD7XTMA1

MOSFET N-CH 600V 31A HDSOP-10

Infineon Technologies
1,648 -

RFQ

IPDD60R105CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) - 105mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1504 pF @ 400 V - 198W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK5014DPP-E0#T2

RJK5014DPP-E0#T2

RJK5014DPP-E0#T2 - SILICON N CHA

Renesas
12,336 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 390mOhm @ 9.5A, 10V 4.5V @ 1mA 46 nC @ 10 V ±30V 1800 pF @ 25 V - 35W (Tc) 150°C Through Hole
IRF9240

IRF9240

HEXFET POWER MOSFET

International Rectifier
11,812 -

RFQ

IRF9240

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCPF36N60NT

FCPF36N60NT

MOSFET N-CH 600V 36A TO220F

Fairchild Semiconductor
2,467 -

RFQ

FCPF36N60NT

Ficha técnica

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
RJL5014DPP-E0#T2

RJL5014DPP-E0#T2

RJL5014DPP-E0#T2 - SILICON N CHA

Renesas
2,240 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 400mOhm @ 9.5A, 10V 4V @ 1mA 43 nC @ 10 V ±30V 1700 pF @ 25 V - 35W (Tc) 150°C Through Hole
E3M0280090D

E3M0280090D

SICFET N-CH 900V 11.5A TO247-3

Wolfspeed, Inc.
528 -

RFQ

E3M0280090D

Ficha técnica

Tube E-Series, Automotive Obsolete N-Channel SiCFET (Silicon Carbide) 900 V 11.5A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH038AN08A1

FDH038AN08A1

MOSFET N-CH 75V 22A/80A TO247-3

Fairchild Semiconductor
6,254 -

RFQ

FDH038AN08A1

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 22A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 8665 pF @ 25 V - 450W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPDD60R090CFD7XTMA1

IPDD60R090CFD7XTMA1

MOSFET N-CH 600V 33A HDSOP-10

Infineon Technologies
1,489 -

RFQ

IPDD60R090CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) - 90mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1747 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R102G7XTMA1

IPT60R102G7XTMA1

MOSFET N-CH 650V 23A 8HSOF

Infineon Technologies
909 -

RFQ

IPT60R102G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 650 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 141W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BTS129NKSA1

BTS129NKSA1

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
4,500 -

RFQ

BTS129NKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCH077N65F-F085

FCH077N65F-F085

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
20,195 -

RFQ

FCH077N65F-F085

Ficha técnica

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 77mOhm @ 27A, 10V 5V @ 250µA 164 nC @ 10 V ±20V 7162 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH077N65F-F085

FCH077N65F-F085

MOSFET N-CH 650V 54A TO247-3

Fairchild Semiconductor
148 -

RFQ

FCH077N65F-F085

Ficha técnica

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 77mOhm @ 27A, 10V 5V @ 250µA 164 nC @ 10 V ±20V 7162 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
GPI65015DFN

GPI65015DFN

GANFET N-CH 650V 15A DFN 8X8

GaNPower
155 -

RFQ

GPI65015DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 15A 6V - 1.2V @ 3.5mA 3.3 nC @ 6 V +7.5V, -12V 116 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
IAUS300N08S5N014TATMA1

IAUS300N08S5N014TATMA1

MOSFET N-CH 80V 300A HDSOP-16-2

Infineon Technologies
1,011 -

RFQ

IAUS300N08S5N014TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 187 nC @ 10 V ±20V 13178 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT60R105CFD7XTMA1

IPT60R105CFD7XTMA1

MOSFET N-CH 600V 24A 8HSOF

Infineon Technologies
1,990 -

RFQ

IPT60R105CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SD211DE TO-72 4L

SD211DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
678 -

RFQ

SD211DE TO-72 4L

Ficha técnica

Bulk SD211 Active N-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 5V, 25V 45Ohm @ 1mA, 10V 1.5V @ 1µA - +25V, -300mV - - 300mW (Ta) -55°C ~ 125°C (TJ) Through Hole
IMBF170R650M1XTMA1

IMBF170R650M1XTMA1

SICFET N-CH 1700V 7.4A TO263-7

Infineon Technologies
687 -

RFQ

IMBF170R650M1XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 7.4A (Tc) 12V, 15V 650mOhm @ 1.5A, 15V 5.7V @ 1.7mA 8 nC @ 12 V +20V, -10V 422 pF @ 1000 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS300N10S5N015TATMA1

IAUS300N10S5N015TATMA1

MOSFET N-CH 100V 300A HDSOP-16-2

Infineon Technologies
2,964 -

RFQ

IAUS300N10S5N015TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tj) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT60R090CFD7XTMA1

IPT60R090CFD7XTMA1

MOSFET N-CH 600V 28A 8HSOF

Infineon Technologies
1,925 -

RFQ

IPT60R090CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 90mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SD210DE TO-72 4L

SD210DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
230 -

RFQ

SD210DE TO-72 4L

Ficha técnica

Bulk SD210DE Active N-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 5V, 25V 45Ohm @ 1mA, 10V 1.5V @ 1µA - ±40V - - 300mW (Ta) -55°C ~ 125°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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