Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN9R5-100XS,127

PSMN9R5-100XS,127

MOSFET N-CH 100V 44.2A TO220F

NXP USA Inc.
3,271 -

RFQ

PSMN9R5-100XS,127

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44.2A (Tc) 10V 9.6mOhm @ 10A, 10V 4V @ 1mA 81.5 nC @ 10 V ±20V 4454 pF @ 50 V - 52.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NOCATSTYPE

NOCATSTYPE

MOSFET PMV77EN TO-236AB REELLP

NXP USA Inc.
3,352 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
PH5030ALS,115

PH5030ALS,115

MOSFET N-CH 30V TRENCH LFPACK

NXP USA Inc.
2,946 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
PH7030ALS,115

PH7030ALS,115

MOSFET N-CH 30V TRENCH LFPACK

NXP USA Inc.
2,674 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
PMV62XN,215

PMV62XN,215

MOSFET N-CH SOT-23

NXP USA Inc.
2,531 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
BUK7514-60E,127

BUK7514-60E,127

MOSFET N-CH 60V 58A TO220AB

NXP USA Inc.
2,635 -

RFQ

BUK7514-60E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 10V 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK751R6-30E,127

BUK751R6-30E,127

MOSFET N-CH 30V 120A TO220AB

NXP USA Inc.
277 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 4V @ 1mA 154 nC @ 10 V ±20V 11960 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK752R7-60E,127

BUK752R7-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.
1,053 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK753R5-60E,127

BUK753R5-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.
3,581 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.5mOhm @ 25A, 10V 4V @ 1mA 114 nC @ 10 V ±20V 8920 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK754R7-60E,127

BUK754R7-60E,127

MOSFET N-CH 60V 100A TO220AB

NXP USA Inc.
1,957 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 6230 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E1R6-30E,127

BUK7E1R6-30E,127

MOSFET N-CH 30V 120A I2PAK

NXP USA Inc.
295 -

RFQ

BUK7E1R6-30E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 4V @ 1mA 154 nC @ 10 V ±20V 11960 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK952R3-40E,127

BUK952R3-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.
2,001 -

RFQ

BUK952R3-40E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 2.2mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±10V 13160 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK952R8-60E,127

BUK952R8-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.
411 -

RFQ

BUK952R8-60E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 17450 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK953R2-40E,127

BUK953R2-40E,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.
3,261 -

RFQ

BUK953R2-40E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 2.1V @ 1mA 69.5 nC @ 5 V ±10V 9150 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK954R4-80E,127

BUK954R4-80E,127

MOSFET N-CH 80V 120A TO220AB

NXP USA Inc.
478 -

RFQ

BUK954R4-80E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E2R3-40E,127

BUK9E2R3-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.
2,303 -

RFQ

BUK9E2R3-40E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 2.2mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±10V 13160 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E2R8-60E,127

BUK9E2R8-60E,127

MOSFET N-CH 60V 120A I2PAK

NXP USA Inc.
288 -

RFQ

BUK9E2R8-60E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 2.6mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 17450 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT12N150HV-TRL

IXTT12N150HV-TRL

MOSFET N-CH 1500V 12A TO268HV

IXYS
2,783 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1500 V 12A (Tc) 10V 2.2Ohm @ 6A, 10V 4.5V @ 250µA 106 nC @ 10 V ±30V 3720 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN20N120P

IXFN20N120P

MOSFET N-CH 1200V 20A SOT-227B

IXYS
3,453 -

RFQ

IXFN20N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN320N17T2

IXFN320N17T2

MOSFET N-CH 170V 260A SOT227B

IXYS
2,916 -

RFQ

IXFN320N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 260A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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