Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MMIX1F132N50P3

MMIX1F132N50P3

MOSFET N-CH 500V 63A 24SMPD

IXYS
3,303 -

RFQ

MMIX1F132N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 43mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN39N90

IXFN39N90

MOSFET N-CH 900V 39A SOT-227B

IXYS
3,097 -

RFQ

IXFN39N90

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 39A (Tc) 10V 220mOhm @ 500mA, 10V 5V @ 8mA 390 nC @ 10 V ±20V 9200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT100M50J

APT100M50J

MOSFET N-CH 500V 103A SOT227

Microchip Technology
3,576 -

RFQ

APT100M50J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 103A (Tc) 10V 38mOhm @ 75A, 10V 5V @ 5mA 620 nC @ 10 V ±30V 24600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFL32N120P

IXFL32N120P

MOSFET N-CH 1200V 24A I5PAK

IXYS
2,589 -

RFQ

IXFL32N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 10V 340mOhm @ 16A, 10V 6.5V @ 1mA 360 nC @ 10 V ±30V 21000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30M36JLL

APT30M36JLL

MOSFET N-CH 300V 76A ISOTOP

Microchip Technology
2,216 -

RFQ

APT30M36JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 76A (Tc) - 36mOhm @ 38A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Chassis Mount
IXFN26N120P

IXFN26N120P

MOSFET N-CH 1200V 23A SOT-227B

IXYS
3,312 -

RFQ

IXFN26N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 23A (Tc) 10V 460mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14000 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
BUK9E3R2-40E,127

BUK9E3R2-40E,127

MOSFET N-CH 40V 100A I2PAK

NXP USA Inc.
3,731 -

RFQ

BUK9E3R2-40E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.8mOhm @ 25A, 10V 2.1V @ 1mA 69.5 nC @ 5 V ±10V 9150 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E3R7-60E,127

BUK9E3R7-60E,127

MOSFET N-CH 60V 120A I2PAK

NXP USA Inc.
3,745 -

RFQ

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V, 10V 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E4R4-80E,127

BUK9E4R4-80E,127

MOSFET N-CH 80V 120A I2PAK

NXP USA Inc.
295 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 5V, 10V 4.2mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 5 V ±10V 17130 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E4R9-60E,127

BUK9E4R9-60E,127

MOSFET N-CH 60V 100A I2PAK

NXP USA Inc.
3,533 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V 2.1V @ 1mA 65 nC @ 5 V ±10V 9710 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E6R1-100E,127

BUK9E6R1-100E,127

MOSFET N-CH 100V 120A I2PAK

NXP USA Inc.
285 -

RFQ

BUK9E6R1-100E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V 2.1V @ 1mA 133 nC @ 5 V ±10V 17460 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E8R5-40E,127

BUK9E8R5-40E,127

MOSFET N-CH 40V 75A I2PAK

NXP USA Inc.
2,432 -

RFQ

BUK9E8R5-40E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 6.6mOhm @ 20A, 10V 2.1V @ 1mA 20.9 nC @ 5 V ±10V 2600 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E1R8-40E,127

BUK9E1R8-40E,127

MOSFET N-CH 40V 120A I2PAK

NXP USA Inc.
3,559 -

RFQ

BUK9E1R8-40E,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9Y7R8-80E,115

BUK9Y7R8-80E,115

MOSFET N-CH 80V LFPAK56 PWR-SO8

NXP USA Inc.
2,502 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V - - - - - - - - - - Surface Mount
BUK9Y98-80E,115

BUK9Y98-80E,115

MOSFET N-CH 80V LFPAK56 PWR-SO8

NXP USA Inc.
3,829 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V - - - - - - - - - - Surface Mount
BUK9Y9R9-80E,115

BUK9Y9R9-80E,115

MOSFET N-CH 80V LFPAK56 PWR-SO8

NXP USA Inc.
3,641 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V - - - - - - - - - - Surface Mount
PSMN4R6-100XS,127

PSMN4R6-100XS,127

MOSFET N-CH 100V 70.4A TO220F

NXP USA Inc.
2,717 -

RFQ

PSMN4R6-100XS,127

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70.4A (Tc) 10V 4.6mOhm @ 15A, 10V 4V @ 1mA 153 nC @ 10 V ±20V 9900 pF @ 50 V - 63.8W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN8R5-100XSQ

PSMN8R5-100XSQ

MOSFET N-CH 100V 49A TO220F

NXP USA Inc.
2,661 -

RFQ

PSMN8R5-100XSQ

Ficha técnica

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 49A (Tj) 10V 8.5mOhm @ 10A, 10V 4V @ 1mA 100 nC @ 10 V ±20V 5512 pF @ 50 V - 55W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7C1R2-40EJ

BUK7C1R2-40EJ

MOSFET N-CH 40V D2PAK-7

NXP USA Inc.
3,156 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V - - - - - - - - - - Surface Mount
BUK7C1R4-40EJ

BUK7C1R4-40EJ

MOSFET N-CH 40V D2PAK-7

NXP USA Inc.
3,796 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V - - - - - - - - - - Surface Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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