Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NP88N075EUE-E2-AY

NP88N075EUE-E2-AY

NP88N075EUE - POWER MOSFETS FOR

Renesas
1,600 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 88A (Tc) 10V 8.5mOhm @ 44A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 12300 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C Surface Mount
IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-7

Infineon Technologies
992 -

RFQ

IPBE65R190CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 7 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Surface Mount
3N170 TO-72 4L

3N170 TO-72 4L

N-CHANNEL ENHANCEMENT MODE MOSFE

Linear Integrated Systems, Inc.
880 -

RFQ

3N170 TO-72 4L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 25 V 30mA 10V 200Ohm @ 100µA, 10V 2V @ 10µA - ±35V - - 300mW -55°C ~ 135°C (TJ) Through Hole
BUK653R2-55C,127

BUK653R2-55C,127

MOSFET N-CH 55V 120A TO220AB

NXP USA Inc.
3,726 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 4.5V, 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R4-40C,127

BUK653R4-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.
2,950 -

RFQ

BUK653R4-40C,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 3.6mOhm @ 25A, 10V 2.8V @ 1mA 125 nC @ 10 V ±16V 8020 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R5-55C,127

BUK653R5-55C,127

MOSFET N-CH 55V 120A TO220AB

NXP USA Inc.
4,931 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 4.5V, 10V 3.9mOhm @ 25A, 10V 2.8V @ 1mA 191 nC @ 10 V ±16V 11516 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK653R7-30C,127

BUK653R7-30C,127

MOSFET N-CH 30V 100A TO220AB

NXP USA Inc.
5,180 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 25A, 10V 2.8V @ 1mA 78 nC @ 10 V ±16V 4707 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK654R0-75C,127

BUK654R0-75C,127

MOSFET N-CH 75V 120A TO220AB

NXP USA Inc.
3,883 -

RFQ

BUK654R0-75C,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V 2.8V @ 1mA 234 nC @ 10 V ±16V 15450 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK654R6-55C,127

BUK654R6-55C,127

MOSFET N-CH 55V 100A TO220AB

NXP USA Inc.
3,856 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 5.4mOhm @ 25A, 10V 2.8V @ 1mA 124 nC @ 10 V ±16V 7750 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK655R0-75C,127

BUK655R0-75C,127

MOSFET N-CH 75V 120A TO220AB

NXP USA Inc.
2,427 -

RFQ

Bulk,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 5.3mOhm @ 25A, 10V 2.8V @ 1mA 177 nC @ 10 V ±16V 11400 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
CMF10120D

CMF10120D

SICFET N-CH 1200V 24A TO247

Wolfspeed, Inc.
2,569 -

RFQ

CMF10120D

Ficha técnica

Tube Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 20V 220mOhm @ 10A, 20V 4V @ 500µA 47.1 nC @ 20 V +25V, -5V 928 pF @ 800 V - 134W (Tc) -55°C ~ 135°C (TJ) Through Hole
BUK7Y08-40B/C,115

BUK7Y08-40B/C,115

MOSFET N-CH 40V 75A LFPAK56

NXP USA Inc.
3,565 -

RFQ

BUK7Y08-40B/C,115

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 36.3 nC @ 10 V ±20V 2040 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y25-40B/C,115

BUK7Y25-40B/C,115

MOSFET N-CH 40V 35.3A LFPAK56

NXP USA Inc.
2,119 -

RFQ

BUK7Y25-40B/C,115

Ficha técnica

Tape & Reel (TR),Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 35.3A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 1mA 12.1 nC @ 10 V ±20V 693 pF @ 25 V - 59.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMN35EN,115

PMN35EN,115

MOSFET N-CH 30V 5.1A 6TSOP

NXP USA Inc.
211,087 -

RFQ

PMN35EN,115

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 31mOhm @ 5.1A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 334 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMT29EN,135

PMT29EN,135

MOSFET N-CH 30V 6A SOT223

NXP USA Inc.
3,899 -

RFQ

PMT29EN,135

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 29mOhm @ 6A, 10V 2.5V @ 250µA 11 nC @ 10 V ±20V 492 pF @ 15 V - 820mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN013-100XS,127

PSMN013-100XS,127

MOSFET N-CH 100V 35.2A TO220F

NXP USA Inc.
3,138 -

RFQ

PSMN013-100XS,127

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35.2A (Tc) 10V 13.9mOhm @ 10A, 10V 4V @ 1mA 57.5 nC @ 10 V ±20V 3195 pF @ 50 V - 48.4W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN016-100XS,127

PSMN016-100XS,127

MOSFET N-CH 100V 32.1A TO220F

NXP USA Inc.
3,994 -

RFQ

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 32.1A (Tc) 10V 16mOhm @ 10A, 10V 4V @ 1mA 46.2 nC @ 10 V ±20V 2404 pF @ 50 V - 46.1W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN5R0-100XS,127

PSMN5R0-100XS,127

MOSFET N-CH 100V 67.5A TO220F

NXP USA Inc.
2,557 -

RFQ

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67.5A (Tc) 10V 5mOhm @ 15A, 10V 4V @ 1mA 153 nC @ 10 V ±20V 9900 pF @ 50 V - 63.8W (Tc) - Through Hole
PSMN5R6-100XS,127

PSMN5R6-100XS,127

MOSFET N-CH 100V 61.8A TO220F

NXP USA Inc.
2,801 -

RFQ

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 61.8A (Tc) 10V 5.6mOhm @ 15A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 8061 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN7R0-100XS,127

PSMN7R0-100XS,127

MOSFET N-CH 100V 55A TO220F

NXP USA Inc.
2,335 -

RFQ

PSMN7R0-100XS,127

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 6686 pF @ 50 V - 57.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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