Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTK8N150L

IXTK8N150L

MOSFET N-CH 1500V 8A TO264

IXYS
3,936 -

RFQ

IXTK8N150L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1500 V 8A (Tc) 20V 3.6Ohm @ 4A, 20V 8V @ 250µA 250 nC @ 15 V ±30V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
STE40NC60

STE40NC60

MOSFET N-CH 600V 40A ISOTOP

STMicroelectronics
2,847 -

RFQ

STE40NC60

Ficha técnica

Tube PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 20A, 10V 4V @ 250µA 430 nC @ 10 V ±30V 11100 pF @ 25 V - 460W (Tc) 150°C (TJ) Chassis Mount
IXFN130N30

IXFN130N30

MOSFET N-CH 300V 130A SOT-227B

IXYS
2,782 -

RFQ

IXFN130N30

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 300 V 130A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 8mA 380 nC @ 10 V ±20V 14500 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFB100N50Q3

IXFB100N50Q3

MOSFET N-CH 500V 100A PLUS264

IXYS
3,866 -

RFQ

IXFB100N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 100A (Tc) 10V 49mOhm @ 50A, 10V 6.5V @ 8mA 255 nC @ 10 V ±30V 13800 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8020JFLL

APT8020JFLL

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology
2,983 -

RFQ

APT8020JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) - 220mOhm @ 16.5A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - -55°C ~ 150°C (TJ) Chassis Mount
APT12057LFLLG

APT12057LFLLG

MOSFET N-CH 1200V 22A TO264

Microchip Technology
3,318 -

RFQ

APT12057LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 185 nC @ 10 V ±30V 5155 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10045JFLL

APT10045JFLL

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology
3,641 -

RFQ

APT10045JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Chassis Mount
APT20M20JFLL

APT20M20JFLL

MOSFET N-CH 200V 104A ISOTOP

Microchip Technology
2,251 -

RFQ

APT20M20JFLL

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 104A (Tc) - 20mOhm @ 52A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - Chassis Mount
APT30M36JFLL

APT30M36JFLL

MOSFET N-CH 300V 76A ISOTOP

Microchip Technology
2,334 -

RFQ

APT30M36JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 76A (Tc) - 36mOhm @ 38A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Chassis Mount
APT8020LFLLG

APT8020LFLLG

MOSFET N-CH 800V 38A TO264

Microchip Technology
2,914 -

RFQ

APT8020LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) 10V 220mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V ±30V 5200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60M80L2VRG

APT60M80L2VRG

MOSFET N-CH 600V 65A 264 MAX

Microchip Technology
3,570 -

RFQ

APT60M80L2VRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 65A (Tc) 10V 80mOhm @ 32.5A, 10V 4V @ 5mA 590 nC @ 10 V ±30V 13300 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1F160N30T

MMIX1F160N30T

MOSFET N-CH 300V 102A 24SMPD

IXYS
3,106 -

RFQ

MMIX1F160N30T

Ficha técnica

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 300 V 102A (Tc) 10V 20mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 2800 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTX22N100L

IXTX22N100L

MOSFET N-CH 1000V 22A PLUS247-3

IXYS
2,820 -

RFQ

IXTX22N100L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 10V 600mOhm @ 11A, 20V 5V @ 250µA 270 nC @ 15 V ±30V 7050 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK17N120L

IXTK17N120L

MOSFET N-CH 1200V 17A TO264

IXYS
2,367 -

RFQ

IXTK17N120L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1200 V 17A (Tc) 20V 900mOhm @ 8.5A, 20V 5V @ 250µA 155 nC @ 15 V ±30V 8300 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IST026N10NM5AUMA1

IST026N10NM5AUMA1

TRENCH >=100V PG-HSOF-5

Infineon Technologies
1,988 -

RFQ

IST026N10NM5AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 248A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.8V @ 148µA 125 nC @ 10 V ±20V 6300 pF @ 50 V - 3.8W (Ta), 313W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC014N04LSIATMA1

BSC014N04LSIATMA1

MOSFET N-CH 40V 31A/100A TDSON

Infineon Technologies
19,508 -

RFQ

BSC014N04LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 100A (Tc) 4.5V, 10V 1.45mOhm @ 50A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4000 pF @ 20 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P3M171K2K3

P3M171K2K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor
300 -

RFQ

P3M171K2K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 68W -55°C ~ 175°C (TJ) Through Hole
SST215 SOT-143 4L

SST215 SOT-143 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
2,201 -

RFQ

SST215 SOT-143 4L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SST215 Active N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 5V, 25V 50Ohm @ 1mA, 10V 1.5V @ 1µA - +30V, -25V - - 300mW (Ta) -55°C ~ 125°C (TJ) Surface Mount
IPB80N08S207ATMA1

IPB80N08S207ATMA1

MOSFET N-CH 75V 80A TO263-3

Infineon Technologies
258 -

RFQ

IPB80N08S207ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SD213DE TO-72 4L

SD213DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
815 -

RFQ

SD213DE TO-72 4L

Ficha técnica

Bulk SD213 Active N-Channel MOSFET (Metal Oxide) 10 V 50mA (Ta) 5V, 25V 45Ohm @ 1mA, 10V 1.5V @ 1µA - +25V, -15V - - 300mW (Ta) -55°C ~ 125°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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