Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT39F60J

APT39F60J

MOSFET N-CH 600V 42A ISOTOP

Microchip Technology
2,614 -

RFQ

APT39F60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M75JLLU3

APT50M75JLLU3

MOSFET N-CH 500V 51A SOT227

Microchip Technology
3,453 -

RFQ

APT50M75JLLU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
C3M0032120J1

C3M0032120J1

1200V 32MOHM SIC MOSFET

Wolfspeed, Inc.
3,424 -

RFQ

C3M0032120J1

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 41.4A, 15V 3.6V @ 11.5mA 111 nC @ 15 V +15V, -4V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 150°C (TJ) Surface Mount
APT20M22JVR

APT20M22JVR

MOSFET N-CH 200V 97A ISOTOP

Microchip Technology
2,760 -

RFQ

APT20M22JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) - 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V - 10200 pF @ 25 V - - - Chassis Mount
APT6010B2FLLG

APT6010B2FLLG

MOSFET N-CH 600V 54A T-MAX

Microchip Technology
3,528 -

RFQ

APT6010B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) - 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Through Hole
IXTF6N200P3

IXTF6N200P3

MOSFET N-CH 2000V 4A I4PAC

IXYS
3,358 -

RFQ

IXTF6N200P3

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 4A (Tc) 10V 4.2Ohm @ 3A, 10V 5V @ 250µA 143 nC @ 10 V ±20V 3700 pF @ 25 V - 215W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN140N25T

IXFN140N25T

MOSFET N-CH 250V 120A SOT227B

IXYS
2,209 -

RFQ

IXFN140N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
TPH3207WS

TPH3207WS

GANFET N-CH 650V 50A TO247-3

Transphorm
3,199 -

RFQ

TPH3207WS

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 50A (Tc) 10V 41mOhm @ 32A, 8V 2.65V @ 700µA 42 nC @ 8 V ±18V 2197 pF @ 400 V - 178W (Tc) -55°C ~ 150°C (TJ) Through Hole
HCT7000MTX

HCT7000MTX

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology
2,971 -

RFQ

HCT7000MTX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
APT8020LLLG

APT8020LLLG

MOSFET N-CH 800V 38A TO264

Microchip Technology
2,229 -

RFQ

APT8020LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) - 200mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - - Through Hole
APT32M80J

APT32M80J

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology
2,229 -

RFQ

APT32M80J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 190mOhm @ 24A, 10V 5V @ 2.5mA 303 nC @ 10 V ±30V 9326 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFZ140N25T

IXFZ140N25T

MOSFET N-CH 250V 100A DE475

IXYS
2,460 -

RFQ

IXFZ140N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 445W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT10045B2LLG

APT10045B2LLG

MOSFET N-CH 1000V 23A T-MAX

Microchip Technology
3,613 -

RFQ

APT10045B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V ±30V 4350 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10035LLLG

APT10035LLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology
2,685 -

RFQ

APT10035LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 350mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT58M50J

APT58M50J

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology
2,588 -

RFQ

APT58M50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT25M100J

APT25M100J

MOSFET N-CH 1000V 25A ISOTOP

Microchip Technology
2,883 -

RFQ

APT25M100J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 25A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10035LFLLG

APT10035LFLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology
2,650 -

RFQ

APT10035LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) - 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V - 5185 pF @ 25 V - - - Through Hole
APT10035B2FLLG

APT10035B2FLLG

MOSFET N-CH 1000V 28A T-MAX

Microchip Technology
2,602 -

RFQ

APT10035B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN280N085

IXFN280N085

MOSFET N-CH 85V 280A SOT-227B

IXYS
3,058 -

RFQ

IXFN280N085

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 85 V 280A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 8mA 580 nC @ 10 V ±20V 19000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5010JVRU3

APT5010JVRU3

MOSFET N-CH 500V 44A SOT227

Microchip Technology
3,486 -

RFQ

APT5010JVRU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 100mOhm @ 22A, 10V 4V @ 2.5mA 312 nC @ 10 V ±30V 7410 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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