Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT1201R5BVFRG

APT1201R5BVFRG

MOSFET N-CH 1200V 10A TO247

Microchip Technology
2,887 -

RFQ

APT1201R5BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V 4V @ 1mA 285 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
APT30M36LLLG

APT30M36LLLG

MOSFET N-CH 300V 84A TO264

Microchip Technology
3,137 -

RFQ

APT30M36LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 84A (Tc) - 36mOhm @ 42A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Through Hole
APT39M60J

APT39M60J

MOSFET N-CH 600V 42A ISOTOP

Microchip Technology
3,025 -

RFQ

APT39M60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5010JLLU3

APT5010JLLU3

MOSFET N-CH 500V 41A SOT227

Microchip Technology
3,712 -

RFQ

APT5010JLLU3

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 96 nC @ 10 V ±30V 4360 pF @ 25 V - 378W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT58M50JU2

APT58M50JU2

MOSFET N-CH 500V 58A SOT227

Microchip Technology
3,484 -

RFQ

APT58M50JU2

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 10800 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT58M50JU3

APT58M50JU3

MOSFET N-CH 500V 58A SOT227

Microchip Technology
2,285 -

RFQ

APT58M50JU3

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 10800 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT6010LLLG

APT6010LLLG

MOSFET N-CH 600V 54A TO264

Microchip Technology
2,974 -

RFQ

APT6010LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) - 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Through Hole
IXFB170N30P

IXFB170N30P

MOSFET N-CH 300V 170A PLUS264

IXYS
2,013 -

RFQ

IXFB170N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 170A (Tc) 10V 18mOhm @ 85A, 10V 4.5V @ 1mA 258 nC @ 10 V ±20V 20000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M20JLL

APT20M20JLL

MOSFET N-CH 200V 104A ISOTOP

Microchip Technology
3,144 -

RFQ

APT20M20JLL

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 104A (Tc) - 20mOhm @ 52A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - Chassis Mount
IXTH44N25L2

IXTH44N25L2

MOSFET N-CH 250V 44A TO247

IXYS
3,681 -

RFQ

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 75mOhm @ 22A, 10V 4.5V @ 250µA 256 nC @ 10 V ±20V 5740 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB210N30P3

IXFB210N30P3

MOSFET N-CH 300V 210A PLUS264

IXYS
2,973 -

RFQ

IXFB210N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 14.5mOhm @ 105A, 10V 5V @ 8mA 268 nC @ 10 V ±20V 16200 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN34N80

IXFN34N80

MOSFET N-CH 800V 34A SOT-227B

IXYS
3,821 -

RFQ

IXFN34N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 500mA, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFX44N80Q3

IXFX44N80Q3

MOSFET N-CH 800V 44A PLUS247-3

IXYS
2,186 -

RFQ

IXFX44N80Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 6.5V @ 8mA 185 nC @ 10 V ±30V 9840 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT21M100J

APT21M100J

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology
3,468 -

RFQ

APT21M100J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 380mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT19F100J

APT19F100J

MOSFET N-CH 1000V 20A ISOTOP

Microchip Technology
2,944 -

RFQ

APT19F100J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10M11JVRU2

APT10M11JVRU2

MOSFET N-CH 100V 142A SOT227

Microchip Technology
2,780 -

RFQ

APT10M11JVRU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFX26N100P

IXFX26N100P

MOSFET N-CH 1000V 26A PLUS247-3

IXYS
3,495 -

RFQ

IXFX26N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M22JVRU2

APT20M22JVRU2

MOSFET N-CH 200V 97A SOT227

Microchip Technology
3,138 -

RFQ

APT20M22JVRU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M22JVRU3

APT20M22JVRU3

MOSFET N-CH 200V 97A SOT227

Microchip Technology
3,206 -

RFQ

APT20M22JVRU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR64N50Q3

IXFR64N50Q3

MOSFET N-CH 500V 45A ISOPLUS247

IXYS
2,542 -

RFQ

IXFR64N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 45A (Tc) 10V 95mOhm @ 32A, 10V 6.5V @ 4mA 145 nC @ 10 V ±30V 6950 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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