Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT58F50J

APT58F50J

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology
2,256 -

RFQ

APT58F50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M18LVFRG

APT20M18LVFRG

MOSFET N-CH 200V 100A TO264

Microchip Technology
2,822 -

RFQ

APT20M18LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
APT8020B2FLLG

APT8020B2FLLG

MOSFET N-CH 800V 38A T-MAX

Microchip Technology
3,340 -

RFQ

APT8020B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) - 220mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - - Through Hole
APT6010LFLLG

APT6010LFLLG

MOSFET N-CH 600V 54A TO264

Microchip Technology
2,234 -

RFQ

APT6010LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) - 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Through Hole
AUIRF1404ZSTRL

AUIRF1404ZSTRL

MOSFET N-CH 40V 160A D2PAK

International Rectifier
1,149 -

RFQ

AUIRF1404ZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3714-S12-AZ

2SK3714-S12-AZ

2SK3714-S12-AZ - SWITCHING N-CHA

Renesas
142,342 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 10V 13mOhm @ 25A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C Through Hole
IRF6641TRPBF

IRF6641TRPBF

IRF6641 - 12V-300V N-CHANNEL POW

International Rectifier
14,962 -

RFQ

IRF6641TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Ta), 26A (Tc) 10V 59.9mOhm @ 5.5A, 10V 4.9V @ 150µA 48 nC @ 10 V ±20V 2290 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSZ0804LSATMA1

BSZ0804LSATMA1

MOSFET N-CH 100V 11A/40A TSDSON

Infineon Technologies
2,688 -

RFQ

BSZ0804LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 40A (Tc) 4.5V, 10V 9.6mOhm @ 20A, 10V 2.3V @ 36µA 15 nC @ 4.5 V ±20V 2100 pF @ 50 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3607

AUIRFS3607

MOSFET N-CH 75V 80A D2PAK

International Rectifier
688 -

RFQ

AUIRFS3607

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTE2984

NTE2984

MOSFET-PWR N-CHAN 60V 17A TO-220

NTE Electronics, Inc
380 -

RFQ

NTE2984

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 5V 140mOhm @ 8.5A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W -55°C ~ 175°C (TJ) Through Hole
AUIRL1404ZSTRL

AUIRL1404ZSTRL

MOSFET N-CH 40V 160A D2PAK

International Rectifier
1,270 -

RFQ

AUIRL1404ZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC010N04LS6ATMA1

BSC010N04LS6ATMA1

MOSFET N-CH 40V 40A/100A TDSON

Infineon Technologies
5,350 -

RFQ

BSC010N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 2.3V @ 250µA 67 nC @ 4.5 V ±20V 4600 pF @ 20 V - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324S

AUIRF1324S

MOSFET N-CH 24V 195A D2PAK

International Rectifier
10,232 -

RFQ

AUIRF1324S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4115TRL7PP

IRFS4115TRL7PP

IRFS4115 - 12V-300V N-CHANNEL PO

International Rectifier
24,994 -

RFQ

IRFS4115TRL7PP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2903Z

AUIRF2903Z

MOSFET N-CH 30V 160A TO220AB

International Rectifier
2,150 -

RFQ

AUIRF2903Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805L

AUIRF3805L

MOSFET N-CH 55V 160A TO262

International Rectifier
2,929 -

RFQ

AUIRF3805L

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ532-E

2SJ532-E

2SJ532 - P-CHANNEL POWER MOSFET

Renesas
2,148 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 4V, 10V 55mOhm @ 10A, 10V 2V @ 1mA - ±20V 1750 pF @ 10 V - 30W (Tc) 150°C
IRL7486MTRPBF

IRL7486MTRPBF

MOSFET N-CH 40V 209A DIRECTFET

Infineon Technologies
4,789 -

RFQ

IRL7486MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 209A (Tc) 4.5V, 10V 1.25mOhm @ 123A, 10V 2.5V @ 150µA 111 nC @ 4.5 V ±20V 6904 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC009NE2LS5IATMA1

BSC009NE2LS5IATMA1

MOSFET N-CH 25V 40A/100A TDSON

Infineon Technologies
4,339 -

RFQ

BSC009NE2LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 100A (Tc) 4.5V, 10V 0.95mOhm @ 30A, 10V 2V @ 250µA 49 nC @ 10 V ±16V 3200 pF @ 12 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMF6704A

FDMF6704A

HALF BRIDGE BASED MOSFET DRIVER

onsemi
10,612 -

RFQ

FDMF6704A

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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