Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK663R2-40C,118

BUK663R2-40C,118

NEXPERIA BUK663R2-40C - 100A, 40

NXP Semiconductors
724 -

RFQ

BUK663R2-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 125 nC @ 10 V ±16V 8020 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1010ZPBF

IRFR1010ZPBF

IRFR1010 - 12V-300V N-CHANNEL PO

International Rectifier
647 -

RFQ

IRFR1010ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R600P7SAUMA1

IPD60R600P7SAUMA1

MOSFET N-CH 600V 6A TO252-3

Infineon Technologies
122 -

RFQ

IPD60R600P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 30W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDMS7672

FDMS7672

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,000 -

RFQ

FDMS7672

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 28A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 2960 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP125H6433XTMA1

BSP125H6433XTMA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
8,155 -

RFQ

BSP125H6433XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 4.5V, 10V - 2.3V @ 94µA 6.6 nC @ 10 V ±20V 150 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
GT100N12M

GT100N12M

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor
800 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 10mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7635-100A,118

BUK7635-100A,118

BUK7635-100 - N-CHANNEL TRENCHMO

NXP Semiconductors
2,676 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 41A (Ta) 10V 35mOhm @ 25A, 10V 4V @ 1mA - ±20V 2535 pF @ 25 V - 149W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFHM830TRPBF

IRFHM830TRPBF

MOSFET N-CH 30V 21A/40A PQFN

Infineon Technologies
990 -

RFQ

IRFHM830TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 40A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.35V @ 50µA 31 nC @ 10 V ±20V 2155 pF @ 25 V - 2.7W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS630B

IRFS630B

9A, 200V, 0.4OHM, N-CHANNEL MOSF

Fairchild Semiconductor
743 -

RFQ

IRFS630B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP125H6327XTSA1

BSP125H6327XTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
333 -

RFQ

BSP125H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 4.5V, 10V 45Ohm @ 120mA, 10V 2.3V @ 94µA 6.6 nC @ 10 V ±20V 150 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFP4N05L

RFP4N05L

4A, 50V, 0.8OHM, N-CHANNEL MOSFE

Fairchild Semiconductor
9,200 -

RFQ

RFP4N05L

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF6706S2TR1PBF

IRF6706S2TR1PBF

MOSFET N-CH 25V 17A DIRECTFET

Infineon Technologies
838 -

RFQ

IRF6706S2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 63A (Tc) 4.5V, 10V 3.8mOhm @ 17A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 1.8W (Ta), 26W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7204TRPBF

IRF7204TRPBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
517 -

RFQ

IRF7204TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 4.5V, 10V 60mOhm @ 5.3A, 10V 2.5V @ 250µA 25 nC @ 10 V ±12V 860 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7219-55A,118

BUK7219-55A,118

NEXPERIA BUK7219 - N-CHANNEL TRE

NXP Semiconductors
894 -

RFQ

BUK7219-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 55A (Tc) 10V 19mOhm @ 25A, 10V 4V @ 1mA - ±20V 2108 pF @ 25 V - 114W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GC11N65M

GC11N65M

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor
790 -

RFQ

GC11N65M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 768 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN27N80

IXFN27N80

MOSFET N-CH 800V 27A SOT-227B

IXYS
3,841 -

RFQ

IXFN27N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V, 15V 300mOhm @ 13.5A, 10V 4.5V @ 8mA 400 nC @ 10 V ±20V 9740 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IRFP250

IRFP250

MOSFET N-CH 200V 33A TO247-3

STMicroelectronics
3,027 -

RFQ

IRFP250

Ficha técnica

Tube PowerMESH™ II Obsolete N-Channel MOSFET (Metal Oxide) 200 V 33A (Tc) 10V 85mOhm @ 16A, 10V 4V @ 250µA 158 nC @ 10 V ±20V 2850 pF @ 25 V - 180W (Tc) 150°C (TJ) Through Hole
STP3NB100

STP3NB100

MOSFET N-CH 1000V 3A TO220AB

STMicroelectronics
3,611 -

RFQ

STP3NB100

Ficha técnica

Tube PowerMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 6Ohm @ 1.5A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 700 pF @ 25 V - 100W (Tc) 150°C (TJ) Through Hole
STW60NE10

STW60NE10

MOSFET N-CH 100V 60A TO247-3

STMicroelectronics
2,973 -

RFQ

STW60NE10

Ficha técnica

Tube STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 5300 pF @ 25 V - 180W (Tc) 175°C (TJ) Through Hole
STP50NE10

STP50NE10

MOSFET N-CH 100V 50A TO220AB

STMicroelectronics
2,031 -

RFQ

STP50NE10

Ficha técnica

Tube STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 27mOhm @ 25A, 10V 4V @ 250µA 166 nC @ 10 V ±20V 6000 pF @ 25 V - 180W (Tc) 175°C (TJ) Through Hole
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1800+
1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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