Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFL4315

IRFL4315

MOSFET N-CH 150V 2.6A SOT223

Infineon Technologies
3,821 -

RFQ

IRFL4315

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Ta) 10V 185mOhm @ 1.6A, 10V 5V @ 250µA 19 nC @ 10 V ±30V 420 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB17N60K

IRFB17N60K

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
2,408 -

RFQ

IRFB17N60K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 420mOhm @ 10A, 10V 5V @ 250µA 99 nC @ 10 V ±30V 2700 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS115ANKSA1

BTS115ANKSA1

MOSFET N-CH 50V 15.5A TO220AB

Infineon Technologies
12,000 -

RFQ

BTS115ANKSA1

Ficha técnica

Bulk,Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 50 V 15.5A (Tc) 4.5V 120mOhm @ 7.8A, 4.5V 2.5V @ 1mA - ±10V 735 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS121ANKSA1

BTS121ANKSA1

MOSFET N-CH 100V 22A TO220-3

Infineon Technologies
867 -

RFQ

BTS121ANKSA1

Ficha técnica

Bulk,Tube TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V 100mOhm @ 9.5A, 4.5V 2.5V @ 1mA - ±10V 1500 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS282Z E3180A

BTS282Z E3180A

MOSFET N-CH 49V 80A TO220-7

Infineon Technologies
2,579 -

RFQ

BTS282Z E3180A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 49 V 80A (Tc) 4.5V, 10V 6.5mOhm @ 36A, 10V 2V @ 240µA 232 nC @ 10 V ±20V 4800 pF @ 25 V Temperature Sensing Diode 300W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRFBA1405P

IRFBA1405P

MOSFET N-CH 55V 174A SUPER-220

Infineon Technologies
3,669 -

RFQ

IRFBA1405P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 174A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFU3410

IRFU3410

MOSFET N-CH 100V 31A IPAK

Infineon Technologies
2,611 -

RFQ

IRFU3410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3000

IRF3000

MOSFET N-CH 300V 1.6A 8SO

Infineon Technologies
2,045 -

RFQ

IRF3000

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 1.6A (Ta) 10V 400mOhm @ 960mA, 10V 5V @ 250µA 33 nC @ 10 V ±30V 730 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF1302S

IRF1302S

MOSFET N-CH 20V 174A D2PAK

Infineon Technologies
2,395 -

RFQ

IRF1302S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 174A (Tc) 10V 4mOhm @ 104A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3600 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS123-7

BSS123-7

MOSFET N-CH 100V 170MA SOT23-3

Diodes Incorporated
3,838 -

RFQ

BSS123-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 10V 6Ohm @ 170mA, 10V 2V @ 1mA - ±20V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123W-7

BSS123W-7

MOSFET N-CH 100V 170MA SOT323

Diodes Incorporated
2,004 -

RFQ

BSS123W-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2V @ 1mA - ±20V 60 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF2804

IRF2804

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
2,506 -

RFQ

IRF2804

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPW20N60S5FKSA1

SPW20N60S5FKSA1

MOSFET N-CH 600V 20A TO247-3

Infineon Technologies
2,518 -

RFQ

SPW20N60S5FKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
ZXM64N035GTA

ZXM64N035GTA

MOSFET N-CH 35V 4.8A/6.7A SOT223

Diodes Incorporated
3,075 -

RFQ

ZXM64N035GTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 35 V 4.8A (Ta), 6.7A (Tc) 4.5V, 10V 50mOhm @ 3.7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 950 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXM64P035GTA

ZXM64P035GTA

MOSFET P-CH 35V 3.8A/5.3A SOT223

Diodes Incorporated
3,818 -

RFQ

ZXM64P035GTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 35 V 3.8A (Ta), 5.3A (Tc) 4.5V, 10V 75mOhm @ 2.4A, 10V 1V @ 250µA 46 nC @ 10 V ±20V 825 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXM41N10FTA

ZXM41N10FTA

MOSFET N-CH 100V 170MA SOT23-3

Diodes Incorporated
3,864 -

RFQ

ZXM41N10FTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 3V, 4.5V 8Ohm @ 150mA, 4.5V 1.5V @ 1mA - ±40V 25 pF @ 25 V - 360mW (Ta) - Surface Mount
NVMTS0D7N04CLTXG

NVMTS0D7N04CLTXG

AFSM T6 40V LL NCH

onsemi
2,379 -

RFQ

NVMTS0D7N04CLTXG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 67A (Ta), 433A (Tc) 4.5V, 10V 0.63mOhm @ 50A, 10V 2.5V @ 250µA 205 nC @ 10 V ±20V 12238 pF @ 25 V - 2.5W (Ta), 205W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA68N60M6

STWA68N60M6

MOSFET N-CH 600V 63A TO247

STMicroelectronics
3,735 -

RFQ

STWA68N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 63A (Tc) 10V 41mOhm @ 31.5A, 10V 4.75V @ 250µA 106 nC @ 10 V ±25V 4360 pF @ 100 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG73N60AEL-GE3

SIHG73N60AEL-GE3

MOSFET N-CH 600V 69A TO247AC

Vishay Siliconix
2,984 -

RFQ

SIHG73N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 69A (Tc) 10V 42mOhm @ 36.5A, 10V 4V @ 250µA 342 nC @ 10 V ±30V 6709 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA75N60M6

STWA75N60M6

MOSFET N-CH 600V 72A TO247

STMicroelectronics
2,352 -

RFQ

STWA75N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 36mOhm @ 36A, 10V 4.75V @ 250µA 106 nC @ 10 V ±25V 4850 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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