Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STO47N60M6

STO47N60M6

MOSFET N-CH 600V 36A TOLL

STMicroelectronics
3,316 -

RFQ

STO47N60M6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 80mOhm @ 18A, 10V 4.75V @ 250µA 52.2 nC @ 10 V ±25V 2340 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB26NM60N

STB26NM60N

MOSFET N-CH 600V 20A D2PAK

STMicroelectronics
2,012 -

RFQ

STB26NM60N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 165mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1800 pF @ 50 V - 140W (Tc) 150°C (TJ) Surface Mount
RJK60S7DPP-E0#T2

RJK60S7DPP-E0#T2

MOSFET N-CH 600V 30A TO220FP

Renesas Electronics America Inc
3,725 -

RFQ

RJK60S7DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 15A, 10V - 39 nC @ 10 V +30V, -20V 2300 pF @ 25 V Super Junction 34.7W (Tc) 150°C (TJ) Through Hole
STB80N20M5

STB80N20M5

MOSFET N-CH 200V 61A D2PAK

STMicroelectronics
910 -

RFQ

STB80N20M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 200 V 61A (Tc) 10V 23mOhm @ 30.5A, 10V 5V @ 250µA 104 nC @ 10 V ±25V 4329 pF @ 50 V - 190W (Tc) 150°C (TJ) Surface Mount
STH47N60DM6-2AG

STH47N60DM6-2AG

POWER TRANSISTORS

STMicroelectronics
2,039 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 80mOhm @ 18A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2350 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB27NM60ND

STB27NM60ND

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics
3,141 -

RFQ

STB27NM60ND

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) Surface Mount
RJK60S7DPK-M0#T0

RJK60S7DPK-M0#T0

MOSFET N-CH 600V 30A TO3PSG

Renesas Electronics America Inc
3,907 -

RFQ

RJK60S7DPK-M0#T0

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 15A, 10V - 39 nC @ 10 V +30V, -20V 2300 pF @ 25 V Super Junction 227.2W (Tc) 150°C (TJ) Through Hole
R6030MNX

R6030MNX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor
369 -

RFQ

R6030MNX

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 150mOhm @ 15A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 2180 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW38N65M5-4

STW38N65M5-4

MOSFET N-CH 650V 30A TO247-4L

STMicroelectronics
3,184 -

RFQ

STW38N65M5-4

Ficha técnica

Tube MDmesh™ M5 Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ34N50P3

IXFQ34N50P3

MOSFET N-CH 500V 34A TO3P

IXYS
2,397 -

RFQ

IXFQ34N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 170mOhm @ 17A, 10V 5V @ 4mA 60 nC @ 10 V ±30V 3260 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP50N65DM6

STP50N65DM6

MOSFET N-CH 650V 33A TO220

STMicroelectronics
100 -

RFQ

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 91mOhm @ 16.5A, 10V 4.75V @ 250µA 52.5 nC @ 10 V ±25V 2300 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0120065D

C3M0120065D

650V 120M SIC MOSFET

Wolfspeed, Inc.
2,972 -

RFQ

C3M0120065D

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 22A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 28 nC @ 15 V +19V, -8V 640 pF @ 400 V - 98W (Tc) -40°C ~ 175°C (TJ) Through Hole
STHU32N65DM6AG

STHU32N65DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 650 V

STMicroelectronics
100 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Tc) 10V 97mOhm @ 18.5A, 10V 4.75V @ 250µA 52.6 nC @ 10 V ±25V 2211 pF @ 100 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG47N60AEL-GE3

SIHG47N60AEL-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix
2,725 -

RFQ

SIHG47N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 65mOhm @ 23.5A, 10V 4V @ 250µA 222 nC @ 10 V ±30V 4600 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTBGS002N06C

NTBGS002N06C

POWER MOSFET, 60 V, 2.2 M?, 211

onsemi
736 -

RFQ

NTBGS002N06C

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta), 211A (Tc) 10V, 12V 2.1mOhm @ 45A, 12V 4V @ 225µA 62.1 nC @ 10 V ±20V 4620 pF @ 30 V - 3.7W (Ta), 178W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA65N60DM6

STWA65N60DM6

MOSFET N-CH 600V 38A TO247

STMicroelectronics
3,031 -

RFQ

STWA65N60DM6

Ficha técnica

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - - - - - - - - - Through Hole
IXFH80N25X3

IXFH80N25X3

MOSFET N-CH 250V 80A TO247

IXYS
3,176 -

RFQ

IXFH80N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 80A (Tc) 10V 16mOhm @ 40A, 10V 4.5V @ 1.5mA 83 nC @ 10 V ±20V 5430 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW57N65M5-4

STW57N65M5-4

MOSFET N-CH 650V 42A TO247-4L

STMicroelectronics
2,928 -

RFQ

STW57N65M5-4

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
RFP45N06

RFP45N06

MOSFET N-CH 60V 45A TO220-3

onsemi
3,649 -

RFQ

RFP45N06

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 28mOhm @ 45A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2050 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP4N100

RFP4N100

MOSFET N-CH 1000V 4.3A TO220-3

onsemi
2,449 -

RFQ

RFP4N100

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 4.3A (Tc) - 3.5Ohm @ 2.5A, 10V 4V @ 250µA 120 nC @ 20 V - - - - - Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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