Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP8P05

RFP8P05

MOSFET P-CH 50V 8A TO220-3

onsemi
3,300 -

RFQ

RFP8P05

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 8A (Tc) - 300mOhm @ 8A, 10V 4V @ 250µA 80 nC @ 20 V - - - - - Through Hole
FDV302P

FDV302P

MOSFET P-CH 25V 120MA SOT23

onsemi
411,000 -

RFQ

FDV302P

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 25 V 120mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.31 nC @ 4.5 V -8V 11 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS335N

NDS335N

MOSFET N-CH 20V 1.7A SUPERSOT3

onsemi
3,154 -

RFQ

NDS335N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.7V, 4.5V 110mOhm @ 1.7A, 4.5V 1V @ 250µA 9 nC @ 4.5 V 8V 240 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7534D1TR

IRF7534D1TR

MOSFET P-CH 20V 4.3A MICRO8

Infineon Technologies
3,868 -

RFQ

IRF7534D1TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 55mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15 nC @ 5 V ±12V 1066 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7476

IRF7476

MOSFET N-CH 12V 15A 8SO

Infineon Technologies
3,880 -

RFQ

IRF7476

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 15A (Ta) 2.8V, 4.5V 8mOhm @ 15A, 4.5V 1.9V @ 250µA 40 nC @ 4.5 V ±12V 2550 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP460

IRFP460

MOSFET N-CH 500V 20A TO247AD

IXYS
3,796 -

RFQ

IRFP460

Ficha técnica

Tube MegaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN36N60

IXFN36N60

MOSFET N-CH 600V 36A SOT-227B

IXYS
3,339 -

RFQ

IXFN36N60

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 180mOhm @ 500mA, 10V 4.5V @ 8mA 325 nC @ 10 V ±20V 9000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTH20N60

IXTH20N60

MOSFET N-CH 600V 20A TO247

IXYS
3,307 -

RFQ

IXTH20N60

Ficha técnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 350mOhm @ 10A, 10V 4.5V @ 250µA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK0615

2SK0615

MOSFET N-CH 80V 500MA M-A1

Panasonic Electronic Components
2,519 -

RFQ

2SK0615

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 80 V 500mA (Ta) 10V 4Ohm @ 500mA, 10V 3.5V @ 1mA - 20V 45 pF @ 10 V - 1W (Ta) 150°C (TJ) Through Hole
2SK060100L

2SK060100L

MOSFET N-CH 80V 500MA MINIP3-F1

Panasonic Electronic Components
2,673 -

RFQ

2SK060100L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 80 V 500mA (Ta) 10V 4Ohm @ 500mA, 10V 3.5V @ 1mA - 20V 45 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
2SK221100L

2SK221100L

MOSFET N-CH 30V 1A MINIP3-F1

Panasonic Electronic Components
3,806 -

RFQ

2SK221100L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1A (Ta) 4V, 10V 600mOhm @ 500mA, 10V 2V @ 1mA - ±20V 87 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
BUZ30A

BUZ30A

MOSFET N-CH 200V 21A TO220-3

Infineon Technologies
3,014 -

RFQ

BUZ30A

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73

BUZ73

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies
3,653 -

RFQ

BUZ73

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ80A

BUZ80A

MOSFET N-CH 800V 3.6A TO220AB

Infineon Technologies
3,220 -

RFQ

BUZ80A

Ficha técnica

Tube SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3Ohm @ 2A, 10V 4V @ 1mA - ±20V 1350 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP03N60S5HKSA1

SPP03N60S5HKSA1

MOSFET N-CH 600V 3.2A TO220-3

Infineon Technologies
3,142 -

RFQ

SPP03N60S5HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 5.5V @ 135µA 16 nC @ 10 V ±20V 420 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP07N60S5

SPP07N60S5

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies
2,051 -

RFQ

SPP07N60S5

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP08P06PBKSA1

SPP08P06PBKSA1

MOSFET P-CH 60V 8.8A TO220-3

Infineon Technologies
2,830 -

RFQ

SPP08P06PBKSA1

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 300mOhm @ 6.2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 420 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP11N60S5HKSA1

SPP11N60S5HKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies
3,995 -

RFQ

SPP11N60S5HKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP18P06PHKSA1

SPP18P06PHKSA1

MOSFET P-CH 60V 18.7A TO220-3

Infineon Technologies
3,484 -

RFQ

SPP18P06PHKSA1

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 28 nC @ 10 V ±20V 860 pF @ 25 V - 81.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
SPP20N60S5

SPP20N60S5

MOSFET N-CH 650V 20A TO220-3

Infineon Technologies
3,438 -

RFQ

SPP20N60S5

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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