Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN1R5-30BLEJ

PSMN1R5-30BLEJ

MOSFET N-CH 30V 120A D2PAK

Nexperia USA Inc.
2,471 -

RFQ

PSMN1R5-30BLEJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.5mOhm @ 25A, 10V 2.15V @ 1mA 228 nC @ 10 V ±20V 14934 pF @ 15 V - 401W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA4N85X

IXFA4N85X

MOSFET N-CH 850V 3.5A TO263

IXYS
3,055 -

RFQ

IXFA4N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP210N75F6

STP210N75F6

MOSFET N-CH 75V 120A TO220

STMicroelectronics
2,138 -

RFQ

STP210N75F6

Ficha técnica

Tube DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.7mOhm @ 60A, 10V 4V @ 250µA 171 nC @ 10 V ±20V 11800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTBGS3D5N06C

NTBGS3D5N06C

POWER MOSFET, 60 V, 3.7 M?, 127A

onsemi
502 -

RFQ

NTBGS3D5N06C

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 127A (Tc) 10V, 12V 3.7mOhm @ 24A, 12V 4V @ 122µA 39 nC @ 10 V ±20V 2430 pF @ 30 V - 3.7W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6018JNJGTL

R6018JNJGTL

MOSFET N-CH 600V 18A LPTS

Rohm Semiconductor
826 -

RFQ

R6018JNJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 15V 286mOhm @ 9A, 15V 7V @ 4.2mA 42 nC @ 15 V ±30V 1300 pF @ 100 V - 220W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STI22NM60N

STI22NM60N

MOSFET N-CH 600V 16A I2PAK

STMicroelectronics
2,866 -

RFQ

STI22NM60N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 220mOhm @ 8A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 1330 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD13NM60ND

STD13NM60ND

MOSFET N-CH 600V 11A DPAK

STMicroelectronics
978 -

RFQ

STD13NM60ND

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±25V 845 pF @ 50 V - 109W (Tc) 150°C (TJ) Surface Mount
IXFP20N50P3M

IXFP20N50P3M

MOSFET N-CH 500V 8A TO220AB

IXYS
3,565 -

RFQ

IXFP20N50P3M

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB15N50

FDB15N50

MOSFET N-CH 500V 15A D2PAK

onsemi
829 -

RFQ

FDB15N50

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 380mOhm @ 7.5A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1850 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP50N20PM

IXTP50N20PM

MOSFET N-CH 200V 20A TO220

IXYS
3,872 -

RFQ

IXTP50N20PM

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6524KNX3C16

R6524KNX3C16

650V 24A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor
947 -

RFQ

R6524KNX3C16

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 253W (Tc) 150°C (TJ) Through Hole
TSM70N900CI C0G

TSM70N900CI C0G

MOSFET N-CH 700V 4.5A ITO220AB

Taiwan Semiconductor Corporation
920 -

RFQ

TSM70N900CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 4.5A (Tc) 10V 900mOhm @ 1.5A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 482 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI270N4F3

STI270N4F3

MOSFET N-CH 40V 160A I2PAK

STMicroelectronics
888 -

RFQ

STI270N4F3

Ficha técnica

Tube Automotive, AEC-Q101, STripFET™ III Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.6mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
R8005ANJFRGTL

R8005ANJFRGTL

MOSFET N-CH 800V 5A LPTS

Rohm Semiconductor
3,160 -

RFQ

R8005ANJFRGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V 5V @ 1mA 20 nC @ 10 V ±30V 500 pF @ 25 V - 120W (Tc) 150°C (TJ) Surface Mount
IXFP20N50P3

IXFP20N50P3

MOSFET N-CH 500V 8A TO220AB

IXYS
3,063 -

RFQ

IXFP20N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP130N10T2

IXFP130N10T2

MOSFET N-CH 100V 130A TO220AB

IXYS
3,889 -

RFQ

IXFP130N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 65A, 10V 4.5V @ 1mA 130 nC @ 10 V ±20V 6600 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB33N60DM2

STB33N60DM2

MOSFET N-CH 600V 24A D2PAK

STMicroelectronics
3,680 -

RFQ

STB33N60DM2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 130mOhm @ 12A, 10V 5V @ 250µA 43 nC @ 10 V ±25V 1870 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW24N60DM2

STW24N60DM2

MOSFET N-CH 600V 18A TO247

STMicroelectronics
2,537 -

RFQ

STW24N60DM2

Ficha técnica

Tube FDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 250µA 29 nC @ 10 V ±25V 1055 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP16N50P3

IXFP16N50P3

MOSFET N-CH 500V 16A TO220AB

IXYS
2,338 -

RFQ

IXFP16N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 360mOhm @ 8A, 10V 5V @ 2.5mA 29 nC @ 10 V ±30V 1515 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ450P2

IXTQ450P2

MOSFET N-CH 500V 16A TO3P

IXYS
3,877 -

RFQ

IXTQ450P2

Ficha técnica

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 330mOhm @ 8A, 10V 4.5V @ 250µA 43 nC @ 10 V ±30V 2530 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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