Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT12057B2LLG

APT12057B2LLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology
2,974 -

RFQ

APT12057B2LLG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 6200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT26M100JCU2

APT26M100JCU2

MOSFET N-CH 1000V 26A SOT227

Microchip Technology
3,111 -

RFQ

APT26M100JCU2

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT26M100JCU3

APT26M100JCU3

MOSFET N-CH 1000V 26A SOT227

Microchip Technology
2,631 -

RFQ

APT26M100JCU3

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT50M50L2LLG

APT50M50L2LLG

MOSFET N-CH 500V 89A 264 MAX

Microchip Technology
3,823 -

RFQ

APT50M50L2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 89A (Tc) - 50mOhm @ 44.5A, 10V 5V @ 5mA 200 nC @ 10 V - 10550 pF @ 25 V - - - Through Hole
APT50M85JVR

APT50M85JVR

MOSFET N-CH 500V 50A ISOTOP

Microchip Technology
3,223 -

RFQ

APT50M85JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) - 85mOhm @ 500mA, 10V 4V @ 1mA 535 nC @ 10 V - 10800 pF @ 25 V - - - Chassis Mount
APT6010JLL

APT6010JLL

MOSFET N-CH 600V 47A ISOTOP

Microchip Technology
3,876 -

RFQ

APT6010JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) - 100mOhm @ 23.5A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Chassis Mount
APT30M30JLL

APT30M30JLL

MOSFET N-CH 300V 88A ISOTOP

Microchip Technology
2,691 -

RFQ

APT30M30JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) - 30mOhm @ 44A, 10V 5V @ 2.5mA 140 nC @ 10 V - 7030 pF @ 25 V - - - Chassis Mount
APT6013JFLL

APT6013JFLL

MOSFET N-CH 600V 39A ISOTOP

Microchip Technology
3,827 -

RFQ

APT6013JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) - 130mOhm @ 19.5A, 10V 5V @ 2.5mA 130 nC @ 10 V - 5630 pF @ 25 V - - - Chassis Mount
APT12057B2FLLG

APT12057B2FLLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology
3,062 -

RFQ

APT12057B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 185 nC @ 10 V ±30V 5155 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M120JCU2

APT20M120JCU2

MOSFET N-CH 1200V 20A SOT227

Microchip Technology
3,828 -

RFQ

APT20M120JCU2

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT20M120JCU3

APT20M120JCU3

MOSFET N-CH 1200V 20A SOT227

Microchip Technology
3,956 -

RFQ

APT20M120JCU3

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT30M40JVFR

APT30M40JVFR

MOSFET N-CH 300V 70A ISOTOP

Microchip Technology
3,611 -

RFQ

APT30M40JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 40mOhm @ 500mA, 10V 4V @ 2.5mA 425 nC @ 10 V ±30V 10200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50N60JCCU2

APT50N60JCCU2

MOSFET N-CH 600V 50A SOT227

Microchip Technology
3,169 -

RFQ

APT50N60JCCU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 22.5A, 10V 3.9V @ 3mA 150 nC @ 10 V ±20V 6800 pF @ 25 V - 290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT10050JVFR

APT10050JVFR

MOSFET N-CH 1000V 19A ISOTOP

Microchip Technology
3,542 -

RFQ

APT10050JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 19A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Chassis Mount
APT8020JFLL

APT8020JFLL

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology
2,983 -

RFQ

APT8020JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) - 220mOhm @ 16.5A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - -55°C ~ 150°C (TJ) Chassis Mount
APT12057LFLLG

APT12057LFLLG

MOSFET N-CH 1200V 22A TO264

Microchip Technology
3,318 -

RFQ

APT12057LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 185 nC @ 10 V ±30V 5155 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10045JFLL

APT10045JFLL

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology
3,641 -

RFQ

APT10045JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Chassis Mount
APT20M20JFLL

APT20M20JFLL

MOSFET N-CH 200V 104A ISOTOP

Microchip Technology
2,251 -

RFQ

APT20M20JFLL

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 104A (Tc) - 20mOhm @ 52A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - Chassis Mount
APT30M36JFLL

APT30M36JFLL

MOSFET N-CH 300V 76A ISOTOP

Microchip Technology
2,334 -

RFQ

APT30M36JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 76A (Tc) - 36mOhm @ 38A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Chassis Mount
APT8020LFLLG

APT8020LFLLG

MOSFET N-CH 800V 38A TO264

Microchip Technology
2,914 -

RFQ

APT8020LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) 10V 220mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V ±30V 5200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 697 Record«Prev1... 2425262728293031...35Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario